KR970023776A - 반도체 식각공정의 가스분사기구 - Google Patents

반도체 식각공정의 가스분사기구 Download PDF

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Publication number
KR970023776A
KR970023776A KR1019950034557A KR19950034557A KR970023776A KR 970023776 A KR970023776 A KR 970023776A KR 1019950034557 A KR1019950034557 A KR 1019950034557A KR 19950034557 A KR19950034557 A KR 19950034557A KR 970023776 A KR970023776 A KR 970023776A
Authority
KR
South Korea
Prior art keywords
gas
etching process
bolt
gas injection
semiconductor etching
Prior art date
Application number
KR1019950034557A
Other languages
English (en)
Other versions
KR0160390B1 (ko
Inventor
오재영
정석용
김한성
박진호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950034557A priority Critical patent/KR0160390B1/ko
Priority to JP8026533A priority patent/JP2851576B2/ja
Priority to US08/716,775 priority patent/US5783023A/en
Publication of KR970023776A publication Critical patent/KR970023776A/ko
Application granted granted Critical
Publication of KR0160390B1 publication Critical patent/KR0160390B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

본 발명은 중앙부에 공정가스가 분사되는 다수의 분사구멍이 형성되고, 가장자리부에는 가스분사장치에 고정하기 위한 보울트 구멍이 형성되며, 상기 보울트 구멍으로 관통되는 보울트의 머리가 삽입되는 보울트머리홈이 가스분사면측에 형성된 반도체 식각공정의 가스분사기구에 관한 것으로, 상기 보울트 머리가 삽입되는 보울트머리홈을 분사면의 반대면측에도 형성하여 가스분사기구를 반대로 뒤집어 가스분사장치에 고정할 수 있도록 구성된 것이다.
따라서 반복적인 식각공정으로 분사면이 식각되어 사용할 수 없게 되면, 반대로 뒤집어 사용할 수 있게 되므로 수명을 2배로 연장할 수 있는 효과가 있다.

Description

반도체 식각공정의 가스분사기구
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도 및 제5도는 본 발명에 따른 가스분사기구의 설치상태를 나타내는 단면구조도이다.

Claims (1)

  1. 중앙부에 공정가스가 분사되는 다수의 분사구멍이 형성되고, 가장자리부에는 가스분사장치에 고정하기 위한 보울트 구멍이 형성되며, 상기 보울트 구멍으로 관통되는 보울트의 머리가 삽입되는 보울트머리홈이 가스 분사면측에 형성된 반도체 식각공정의 가스분사기구에 있어서, 상기 보울트 머리가 삽입되는 보울트머리홈을 분사면의 반대면측에도 형성하고, 가스분사기구를 반대로 뒤집어 분사면이 가스공급장치에 맞닿게 하여 고정할 수 있도록 구성됨을 특징으로 하는 반도체 식각공정의 가스분사기구.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950034557A 1995-10-09 1995-10-09 반도체 식각공정의 가스분사기구 KR0160390B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950034557A KR0160390B1 (ko) 1995-10-09 1995-10-09 반도체 식각공정의 가스분사기구
JP8026533A JP2851576B2 (ja) 1995-10-09 1996-02-14 半導体エッチング工程のガス噴射器具
US08/716,775 US5783023A (en) 1995-10-09 1996-09-24 Gas injector for use in semiconductor etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034557A KR0160390B1 (ko) 1995-10-09 1995-10-09 반도체 식각공정의 가스분사기구

Publications (2)

Publication Number Publication Date
KR970023776A true KR970023776A (ko) 1997-05-30
KR0160390B1 KR0160390B1 (ko) 1999-02-01

Family

ID=19429625

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950034557A KR0160390B1 (ko) 1995-10-09 1995-10-09 반도체 식각공정의 가스분사기구

Country Status (3)

Country Link
US (1) US5783023A (ko)
JP (1) JP2851576B2 (ko)
KR (1) KR0160390B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342135B1 (en) * 1995-11-02 2002-01-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
KR100452525B1 (ko) 2001-12-26 2004-10-12 주성엔지니어링(주) Ａｌｄ 공정에 적합한 가스 인젝터
US6656284B1 (en) 2002-06-28 2003-12-02 Jusung Engineering Co., Ltd. Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same
US20050220568A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for fastening components used in plasma processing
US7554053B2 (en) * 2005-12-23 2009-06-30 Lam Research Corporation Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system
US7562638B2 (en) * 2005-12-23 2009-07-21 Lam Research Corporation Methods and arrangement for implementing highly efficient plasma traps
US7679024B2 (en) * 2005-12-23 2010-03-16 Lam Research Corporation Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
DE4011933C2 (de) * 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür

Also Published As

Publication number Publication date
JPH09115892A (ja) 1997-05-02
KR0160390B1 (ko) 1999-02-01
JP2851576B2 (ja) 1999-01-27
US5783023A (en) 1998-07-21

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