KR970023716A

KR970023716A - Manufacturing Method of Semiconductor Device

Info

Publication number: KR970023716A
Application number: KR1019950035618A
Authority: KR
Inventors: 윤여철; 박영호
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-10-16
Filing date: 1995-10-16
Publication date: 1997-05-30

Abstract

본 발명은 반도체장치 금속 접속구의 불순물 영역과 금속배선을 연결하는 콘택 패드(contact pad) 형성 방법에 관한 것으로, 기판상에 게이트전극을 형성하는 공정과; 상기 기판상에 불순물 이온을 주입하여 소스/드레인 영역으로 작용되는 P형 불순물 영역을 형성하는 공정과; 상기 기판상에 T1을 포함한 P⁺형 폴리실리콘막을 형성하고 패터닝하여 콘택패드를 형성하는 공정과; 상기 콘택패드 및 기판상에 층간절연막을 형성하는 공정과; 상기 층간절연막을 습식 및 건식식각하여 접속구를 형성하는 공정을 포함하고 있다.The present invention relates to a method of forming a contact pad for connecting an impurity region of a semiconductor device metal connection port and a metal wiring, the method comprising: forming a gate electrode on a substrate; Implanting impurity ions onto the substrate to form a P-type impurity region acting as a source / drain region; Forming a contact pad by forming and patterning a P ⁺ type polysilicon film including T1 on the substrate; Forming an interlayer insulating film on the contact pad and the substrate; And forming a connection hole by wet and dry etching the interlayer insulating film.

Description

Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2D도는 본 발명의 실시예에 따른 반도체장치의 금속 접속구 형성 공정 단면도.2A to 2D are cross-sectional views of a metal connector forming process of a semiconductor device according to an embodiment of the present invention.

Claims

Forming a gate electrode 21 on the semiconductor substrate 11; Implanting BF ₂ impurity ions onto the substrate (11) to form a P ⁺ type impurity region; Forming a P ⁺ type polysilicon film (41) including a trivalent T1 on the gate electrode (21) and the substrate (11); Patterning the P ⁺ type polysilicon film (41) to form a contact pad (41a) pattern; Forming an interlayer insulating film (51) on said contact pad (41a) and said substrate (11); And forming a metal connector by wet and dry the interlayer insulating film (51).

2. The method for forming a metal connector of a semiconductor device according to claim 1, wherein T1 in said P ⁺ type polysilicon film (41) is 0.03 atomic% of the total.

2. The method for forming a metal connector of a semiconductor device according to claim 1, wherein the P ⁺ type polysilicon film is formed by an Ar sputtering method.

2. The method for forming a metal connector of a semiconductor device according to claim 1, wherein the thickness of the contact pad (41a) using said p ⁺ type polysilicon film (41) is formed to be 1000-5000 kPa.

※ Note: The disclosure is based on the initial application.