KR970018516A - 고속 바이폴라/bicmos 회로 esd 보호를 위해 트리거하는 향상된 바이폴라 scr - Google Patents
고속 바이폴라/bicmos 회로 esd 보호를 위해 트리거하는 향상된 바이폴라 scr Download PDFInfo
- Publication number
- KR970018516A KR970018516A KR1019960042846A KR19960042846A KR970018516A KR 970018516 A KR970018516 A KR 970018516A KR 1019960042846 A KR1019960042846 A KR 1019960042846A KR 19960042846 A KR19960042846 A KR 19960042846A KR 970018516 A KR970018516 A KR 970018516A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor layer
- injection region
- protection structure
- circuit protection
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract 5
- 239000010703 silicon Substances 0.000 claims abstract 5
- 239000004065 semiconductor Substances 0.000 claims 24
- 238000002347 injection Methods 0.000 claims 22
- 239000007924 injection Substances 0.000 claims 22
- 239000000463 material Substances 0.000 claims 4
- 238000002955 isolation Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
- H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0191—Manufacturing their doped wells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US452795P | 1995-09-29 | 1995-09-29 | |
| US60/004,527 | 1995-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970018516A true KR970018516A (ko) | 1997-04-30 |
Family
ID=21711220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960042846A Ceased KR970018516A (ko) | 1995-09-29 | 1996-09-30 | 고속 바이폴라/bicmos 회로 esd 보호를 위해 트리거하는 향상된 바이폴라 scr |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH09191082A (https=) |
| KR (1) | KR970018516A (https=) |
| TW (1) | TW316332B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3317285B2 (ja) | 1999-09-09 | 2002-08-26 | 日本電気株式会社 | 半導体保護装置とこれを含む半導体装置及びそれらの製造方法 |
| TWI258838B (en) | 2004-04-23 | 2006-07-21 | Nec Electronics Corp | Electrostatic protection device |
| JP5203850B2 (ja) | 2008-08-22 | 2013-06-05 | パナソニック株式会社 | 静電気保護素子 |
-
1996
- 1996-09-30 KR KR1019960042846A patent/KR970018516A/ko not_active Ceased
- 1996-09-30 JP JP8293083A patent/JPH09191082A/ja active Pending
- 1996-12-26 TW TW085116041A patent/TW316332B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW316332B (https=) | 1997-09-21 |
| JPH09191082A (ja) | 1997-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19960930 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20010927 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19960930 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20030630 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20030930 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20030630 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |