KR970018050A

KR970018050A - How to make contact holes

Info

Publication number: KR970018050A
Application number: KR1019950031362A
Authority: KR
Inventors: 이동원; 정훈필
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-09-22
Filing date: 1995-09-22
Publication date: 1997-04-30

Abstract

이 발명은 콘택 홀의 제조 방법에 관한 것으로서, 기판(10) 위에 소자(20)를 형성하고, 그 위에 도핑되지 않는 산화막(30)과 BPSG 절연막(40)을 증착한 후, 평탄화를 위하여 고온에서 Reflow 시킨다. BPSG 절연막(40)을 황산(H2SO4)과 과산화수소(H2O2)의 비율이 6 : 1인 130℃의 용액에서 10분간 Dipping을 실시하고, HMDS의 접착 강화제를 분사한 후, 그 위에 감광액(50)을 도포하고, 접촉창 패턴(60)을 형성하게 된다. 접촉창 패턴(60)의 부분을 습식 식각 방법으로 습식 식각 부분(70)까지 식각하고, 이어서 건식 식각 방법으로 계속 식각하여 건식 식각 부분(80)까지 식각함으로써, 감광액의 접착력이 증가하게 되어 습식 식각을 진행하여도 언더컷(Undercutr) 현상을 감소하게 되고, 이에 따라 감광액(50)의 붕괴 현상을 방지할 수 있는 콘택 홀의 제조 방법을 제공하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact hole, wherein an element 20 is formed on a substrate 10, an undoped oxide film 30 and a BPSG insulating film 40 are deposited thereon, and then reflowed at a high temperature for planarization. Let's do it. Dipping the BPSG insulating film 40 in a solution of 130 ° C. with a ratio of sulfuric acid (H 2 SO 4) and hydrogen peroxide (H 2 O 2) at 6: 1 for 10 minutes, spraying an adhesion enhancer of HMDS, and then applying a photoresist 50 thereon. And the contact window pattern 60 is formed. The portion of the contact window pattern 60 is etched to the wet etched portion 70 by the wet etching method, and then continuously etched by the dry etching method to the dry etched portion 80 to thereby increase the adhesive force of the photoresist to wet etching. In order to reduce the undercut (Uncutcut) phenomenon, thereby providing a method for manufacturing a contact hole that can prevent the collapse of the photosensitive liquid 50.

Description

How to make contact holes

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 이 발명의 실시예에 따른 콘택 홀 제조 방법을 나타낸 도면이다.2 is a view showing a contact hole manufacturing method according to an embodiment of the present invention.

Claims

Forming a device on the substrate, depositing an undoped oxide film and a BPSG insulating film thereon, reflowing at a high temperature for planarization, and dipping the BPSG insulating film in a solution of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2). A step of spraying an adhesion enhancer, applying a photosensitive liquid thereon, forming a contact window pattern, etching a wet etching portion by a wet etching method, and a wet etching portion. A method of manufacturing a semiconductor device, comprising the step of etching.

The method of claim 1, wherein the solution of sulfuric acid and hydrogen peroxide is a solution mixed at a ratio of 2: 1 to 100: 1.

The method of claim 1, wherein the solution of sulfuric acid and hydrogen peroxide is a solution mixed at a ratio of 6: 1.

The method for manufacturing a contact hole according to claim 1, wherein the temperature of the solution of sulfuric acid and hydrogen peroxide is 50 ° C or more and 200 ° C or less.

The method of claim 1, wherein the temperature of the solution of sulfuric acid and hydrogen peroxide is 130 ℃.

The method of claim 1, wherein the dipping time in the solution of sulfuric acid and hydrogen peroxide is 1 minute or more and 30 minutes or less.

The method of claim 1, wherein the dipping time in a solution of sulfuric acid and hydrogen peroxide is 10 minutes.

※ Note: The disclosure is based on the initial application.