KR970013361A

KR970013361A - Capacitor Manufacturing Method of Semiconductor Device

Info

Publication number: KR970013361A
Application number: KR1019950028515A
Authority: KR
Inventors: 이승구; 최용진
Original assignee: 김광호; 삼성전자주식회사
Priority date: 1995-08-31
Filing date: 1995-08-31
Publication date: 1997-03-29

Abstract

반도체 장치의 제조에 있어서, 공정 단순화를 기할 수 있는 원통형 원통형 캐패시터의 제조방법을 개시한다. 본 발명은 트랜지스터가 형성된 반도체 기판상에 층간 절연막, 질화막, 산화막, 전도성을 갖는 제1폴리실리콘, 및 3000Å이상의 고온산화막을 순차적으로 형성한 후 매몰 콘택트 형성을 위한 식각공정을 수행한다. 이어, 제2 폴리실리콘을 증착하고, 스토리지 노드 패턴 형성을 위하여 상기 제2 폴리실리콘과 고온산화막을 순차적으로 식각한 후, 연이어 제3폴리실리콘을 증착한다. 상기 고온산화막과 그 상부에 형성된 제2 및 제3 폴리실리콘을 제거하여 상기 제1, 제2 및 제3 폴리실리콘으로 이루어진 스토리지 전극 패턴을 형성하는 단계로 구성된다.Disclosed is a method of manufacturing a cylindrical cylindrical capacitor capable of simplifying a process in manufacturing a semiconductor device. The present invention sequentially forms an interlayer insulating film, a nitride film, an oxide film, a conductive first polysilicon, and a high temperature oxide film of 3000 Å or more on a semiconductor substrate on which a transistor is formed, and then performs an etching process for forming a buried contact. Subsequently, second polysilicon is deposited, the second polysilicon and the high temperature oxide layer are sequentially etched to form a storage node pattern, and then third polysilicon is subsequently deposited. And removing the high temperature oxide layer and the second and third polysilicon formed thereon to form a storage electrode pattern formed of the first, second and third polysilicon.

Description

Capacitor Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도 내지 제4도는 본 발명에 의한 반도체 장치의 캐패시터 제조방법을 각 단계별로 순차적으로 도시한 공정단면도이다.3 to 4 are process cross-sectional views sequentially showing the capacitor manufacturing method of the semiconductor device according to the present invention in each step.

Claims

A method of manufacturing a capacitor of a semiconductor device, comprising: forming an interlayer insulating film on a semiconductor substrate on which a transistor is formed, and having an extended storage node area before forming a buried contact, and having a nitride film, an oxide film, and a conductive film on the interlayer insulating film. Step of forming a polysilicon and a high temperature oxide film of more than 3000 Å in sequence: forming a contact by etching the collision so that a semiconductor substrate of a predetermined region is exposed by using a photo process: forming a second polysilicon on the entire surface of the result Depositing: sequentially etching the second polysilicon and the high temperature oxide film to form a storage node pattern: depositing a third polysilicon on the entire surface of the resultant; and the second and the second and the second oxide formed on the high temperature oxide film 3 polysilicon is removed to form the first, second and third polysilicon Capacitor manufacturing method consisting of forming a storage electrode.