KR970012992A - Method of manufacturing a silicon on insulator (SOI) semiconductor device - Google Patents
Method of manufacturing a silicon on insulator (SOI) semiconductor device Download PDFInfo
- Publication number
- KR970012992A KR970012992A KR1019950025742A KR19950025742A KR970012992A KR 970012992 A KR970012992 A KR 970012992A KR 1019950025742 A KR1019950025742 A KR 1019950025742A KR 19950025742 A KR19950025742 A KR 19950025742A KR 970012992 A KR970012992 A KR 970012992A
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- KR
- South Korea
- Prior art keywords
- oxide
- film
- stopper
- forming
- silicon
- Prior art date
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- Element Separation (AREA)
Abstract
산화막 스톱퍼(oxide stopper)를 갖는 SOI 기판을 이용하는 SOI 반도체 장치의 제조방법에 관하여 개시한다. 본 발명은 베이스 기판상에 산화막 스톱퍼를 매개로 패턴된 실리콘층을 갖는 실리콘 온 인슐레이터(SOI)기판을 형성하는 단계와, 상기 패턴된 실리콘층 상에 패드 산화막과 실리콘질화막을 형성하는 단계와, 상기 패드산화막과 실리콘질화막을 식각마스크로 상기 산화막 스톱퍼 및 베이스 기판을 식각하여 트랜치를 형성하는 단계와, 상기 식각된 베이스 기판의 측벽 및 상기 산화막 스톱퍼의 일부 측벽에 유전막과 제1폴리실리콘막을 형성하는 단계와, 상기 유전막과 산화막 스톱퍼를 등방성식각하는 단계와, 상기 식각된 실리콘층 및 산화막 스톱퍼의 일부 측벽에 제2폴리실리콘막을 형성하는 단계를 구비하는 것을 특징으로 하는 실리콘 온 인슐레이터 반도체 장치의 제조방법을 제공한다. 본 발명에 의하면, 패턴된 실리콘층을 사용하여 간단한 공정으로 SOI 반도체 장치를 제조할 수 있다.A method for manufacturing an SOI semiconductor device using an SOI substrate having an oxide stopper is disclosed. The present invention provides a method of forming a silicon on insulator (SOI) substrate having a silicon layer patterned through an oxide stopper on a base substrate, forming a pad oxide film and a silicon nitride film on the patterned silicon layer; Etching the oxide stopper and the base substrate using an etch mask using a pad oxide film and a silicon nitride layer to form a trench, and forming a dielectric film and a first polysilicon film on sidewalls of the etched base substrate and some sidewalls of the oxide stopper. And isotropically etching the dielectric film and the oxide stopper, and forming a second polysilicon film on a portion of sidewalls of the etched silicon layer and the oxide stopper. to provide. According to the present invention, the SOI semiconductor device can be manufactured in a simple process using the patterned silicon layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도 내지 제4도는 본 발명에 의한 SOI 반도체 장치의 제조방법을 설명하기 위하여 도시한 단면도들이다1 through 4 are cross-sectional views illustrating a method of manufacturing an SOI semiconductor device according to the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950025742A KR970012992A (en) | 1995-08-21 | 1995-08-21 | Method of manufacturing a silicon on insulator (SOI) semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950025742A KR970012992A (en) | 1995-08-21 | 1995-08-21 | Method of manufacturing a silicon on insulator (SOI) semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970012992A true KR970012992A (en) | 1997-03-29 |
Family
ID=66595897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950025742A KR970012992A (en) | 1995-08-21 | 1995-08-21 | Method of manufacturing a silicon on insulator (SOI) semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970012992A (en) |
-
1995
- 1995-08-21 KR KR1019950025742A patent/KR970012992A/en not_active Application Discontinuation
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| WITN | Withdrawal due to no request for examination |