KR970060387A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
KR970060387A
KR970060387A KR1019960001679A KR19960001679A KR970060387A KR 970060387 A KR970060387 A KR 970060387A KR 1019960001679 A KR1019960001679 A KR 1019960001679A KR 19960001679 A KR19960001679 A KR 19960001679A KR 970060387 A KR970060387 A KR 970060387A
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KR
South Korea
Prior art keywords
semiconductor device
film
insulating film
gate
manufacturing
Prior art date
Application number
KR1019960001679A
Other languages
Korean (ko)
Inventor
박동철
한재종
오영선
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960001679A priority Critical patent/KR970060387A/en
Publication of KR970060387A publication Critical patent/KR970060387A/en

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Abstract

본 발명은 반도체 장치의 제조 방법에 관한 것으로서, 좀더 구체적으로 게이트를 등방성 식각하므로써, 고집적 반도체 장치에서의 미세한 게이트를 형성하는 반도체 장치의 제조 방법에 관한 것이다. 반도체 장치의 게이트를 이방성 식각한 후, 등방상 식각하므로써, 반도체 장치의 게이트를 미세하게 형성할 수 있게 되어 향후의 고집적 반도체 장치를 형성하기가 용이할 뿐만 아니라, 반도체 장치의 집적도를 더욱더 향상시킬 수 있게 된다.The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device which forms a fine gate in a highly integrated semiconductor device by isotropically etching a gate. It is possible to finely form the gate of the semiconductor device by anisotropically etching the gate of the semiconductor device and then isotropically etched to easily form a highly integrated semiconductor device in the future and to further improve the degree of integration of the semiconductor device .

Description

반도체 장치의 제조 방법Method for manufacturing semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2a도 내지 제2d도는 본 발명의 실시예에 따라 반도체 장치를 제조하는 공정들을 보여주는 단면도.Figures 2a through 2d are cross-sectional views illustrating processes for fabricating a semiconductor device in accordance with an embodiment of the present invention.

Claims (5)

반도체 기판(11)상에 게이트 산화막(12), 게이트용 폴리 실리콘막(13), 절연막(14), 포토 레지스트막(15)을 순차적으로 형성하는 공정과, 상기의 포토 레지스트막(15)을 패터닝하여 게이트가 형성될 영역을 정의하는 공정과, 포토 레지스트 패턴(15a)을 마스크로 하여 그 하부에 형성된 절연막(14)을 선택적으로 식각하는 공정과, 상기 공정으로 형성된 절연막 패턴(14a)을 마스크로 하여 그 하부의 게이트용 폴리 실리콘막(13)을 선택적으로 이방성 식각하는 공정과, 상기 절연막 패턴(14a)을 마스크로 하여 상기의 게이트용 폴리 실리콘막(13)을 등방성 식각하므로써, 반도체 장치의 게이트로 완성하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.A step of sequentially forming a gate oxide film 12, a gate polysilicon film 13, an insulating film 14 and a photoresist film 15 on the semiconductor substrate 11; A step of selectively etching the insulating film 14 formed under the photoresist pattern 15a using the photoresist pattern 15a as a mask and a step of forming the insulating film pattern 14a, And anisotropically etching the gate polysilicon film 13 under the insulating film pattern 14a as a mask to etch the gate polysilicon film 13 isotropically using the insulating film pattern 14a as a mask, Forming a gate electrode on the semiconductor substrate; 제1항에 있어서, 상기의 게이트용 폴리 실리콘막(13)을 등방성 식각한 후, 이방성 식각하기 위한 마스크 레이어는 유리 기판상에 형성된 패턴인 것을 특징으로 하는 반도체 장치의 제조 방법.The method of manufacturing a semiconductor device according to claim 1, wherein the mask layer for anisotropically etching the polysilicon film (13) for gate is a pattern formed on a glass substrate. 제1항에 있어서, 상기의 절연막(14)은 상기 게이트용 폴리 실리콘막(13)보다 이방성 및 등방성 식각률이 낮은 것을 특징으로 하는 반도체 장치의 제조 방법.The method of manufacturing a semiconductor device according to claim 1, wherein the insulating film (14) has lower anisotropic and isotropic etching rates than the gate polysilicon film (13). 제1항에 있어서, 상기의 절연막(14)은 실리콘 산화막인 것을 특징으로 하는 반도체 장치의 제조 방법.The method of manufacturing a semiconductor device according to claim 1, wherein the insulating film (14) is a silicon oxide film. 제1항에 있어서, 상기의 절연막(14)은 실리콘 질화막인 것을 특징으로 하는 반도체 장치의 제조 방법.The method of manufacturing a semiconductor device according to claim 1, wherein the insulating film (14) is a silicon nitride film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960001679A 1996-01-26 1996-01-26 Method for manufacturing semiconductor device KR970060387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960001679A KR970060387A (en) 1996-01-26 1996-01-26 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960001679A KR970060387A (en) 1996-01-26 1996-01-26 Method for manufacturing semiconductor device

Publications (1)

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KR970060387A true KR970060387A (en) 1997-08-12

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KR1019960001679A KR970060387A (en) 1996-01-26 1996-01-26 Method for manufacturing semiconductor device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990055768A (en) * 1997-12-27 1999-07-15 김영환 Manufacturing method of semiconductor device
KR20040014112A (en) * 2002-08-09 2004-02-14 가부시키가이샤 히타치세이사쿠쇼 Method of manufacturing a semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990055768A (en) * 1997-12-27 1999-07-15 김영환 Manufacturing method of semiconductor device
KR20040014112A (en) * 2002-08-09 2004-02-14 가부시키가이샤 히타치세이사쿠쇼 Method of manufacturing a semiconductor integrated circuit device

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