KR970008841B1 - Thin film el element manufacturing method and its structure - Google Patents

Thin film el element manufacturing method and its structure Download PDF

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Publication number
KR970008841B1
KR970008841B1 KR89005673A KR890005673A KR970008841B1 KR 970008841 B1 KR970008841 B1 KR 970008841B1 KR 89005673 A KR89005673 A KR 89005673A KR 890005673 A KR890005673 A KR 890005673A KR 970008841 B1 KR970008841 B1 KR 970008841B1
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KR
South Korea
Prior art keywords
depositing
electrode
insulator
thin film
etching
Prior art date
Application number
KR89005673A
Other languages
Korean (ko)
Other versions
KR900017438A (en
Inventor
Kyung-Deuk Jung
Original Assignee
Lg Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Electronics Inc filed Critical Lg Electronics Inc
Priority to KR89005673A priority Critical patent/KR970008841B1/en
Publication of KR900017438A publication Critical patent/KR900017438A/en
Application granted granted Critical
Publication of KR970008841B1 publication Critical patent/KR970008841B1/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources

Abstract

A fabrication method of thin film EL(electro luminescence) devices and structure thereof are disclosed. The method comprises the steps of: forming an ITO(indium tin oxide) transparent electrode(2) on a transparent substrate(1); forming a first insulator(3) by reactive sputtering method using a silicon target; depositing a light emitting layer(4) of ZnS by E-beam or sputtering; etching the light emitting layer(4) using PrMnO3 pattern(5) as a mask; depositing PrMnO3 film(5') again; depositing a second insulator(6) by reactive sputtering; and depositing an Al electrode(7) by thermal deposition on the second insulator(6) and etching the Al electrode(7) to vertically form to the ITO electrode(2).
KR89005673A 1989-04-28 1989-04-28 Thin film el element manufacturing method and its structure KR970008841B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR89005673A KR970008841B1 (en) 1989-04-28 1989-04-28 Thin film el element manufacturing method and its structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR89005673A KR970008841B1 (en) 1989-04-28 1989-04-28 Thin film el element manufacturing method and its structure

Publications (2)

Publication Number Publication Date
KR900017438A KR900017438A (en) 1990-11-16
KR970008841B1 true KR970008841B1 (en) 1997-05-29

Family

ID=19285710

Family Applications (1)

Application Number Title Priority Date Filing Date
KR89005673A KR970008841B1 (en) 1989-04-28 1989-04-28 Thin film el element manufacturing method and its structure

Country Status (1)

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KR (1) KR970008841B1 (en)

Also Published As

Publication number Publication date
KR900017438A (en) 1990-11-16

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