KR970005949B1 - Homo-junction bipolar transistor having high base concentration & suitable for low temperature operation - Google Patents

Homo-junction bipolar transistor having high base concentration & suitable for low temperature operation Download PDF

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Publication number
KR970005949B1
KR970005949B1 KR88013041A KR880013041A KR970005949B1 KR 970005949 B1 KR970005949 B1 KR 970005949B1 KR 88013041 A KR88013041 A KR 88013041A KR 880013041 A KR880013041 A KR 880013041A KR 970005949 B1 KR970005949 B1 KR 970005949B1
Authority
KR
South Korea
Prior art keywords
homo
low temperature
bipolar transistor
high base
temperature operation
Prior art date
Application number
KR88013041A
Other languages
English (en)
Inventor
Yano Kazuo
Aoki Masaaki
Shimohigashi Katsuhiro
Masuhara Toshiaki
Original Assignee
Hitachi Mfg Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Mfg Kk filed Critical Hitachi Mfg Kk
Application granted granted Critical
Publication of KR970005949B1 publication Critical patent/KR970005949B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR88013041A 1987-10-07 1988-10-06 Homo-junction bipolar transistor having high base concentration & suitable for low temperature operation KR970005949B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25149187 1987-10-07
JP14170288 1988-06-10
JP19983488 1988-08-12

Publications (1)

Publication Number Publication Date
KR970005949B1 true KR970005949B1 (en) 1997-04-22

Family

ID=27318307

Family Applications (1)

Application Number Title Priority Date Filing Date
KR88013041A KR970005949B1 (en) 1987-10-07 1988-10-06 Homo-junction bipolar transistor having high base concentration & suitable for low temperature operation

Country Status (4)

Country Link
US (2) US4949145A (ko)
JP (1) JP2590236B2 (ko)
KR (1) KR970005949B1 (ko)
DE (1) DE3834223A1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590236B2 (ja) * 1987-10-07 1997-03-12 株式会社日立製作所 半導体装置
US5177584A (en) * 1988-04-11 1993-01-05 Hitachi, Ltd. Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same
US5028973A (en) * 1989-06-19 1991-07-02 Harris Corporation Bipolar transistor with high efficient emitter
JP2590295B2 (ja) * 1990-06-06 1997-03-12 株式会社東芝 半導体装置及びその製造方法
US5241214A (en) * 1991-04-29 1993-08-31 Massachusetts Institute Of Technology Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
US5311055A (en) * 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
JPH05226352A (ja) * 1992-02-17 1993-09-03 Mitsubishi Electric Corp 半導体装置及びその製造方法
GB9207472D0 (en) * 1992-04-06 1992-05-20 Phoenix Vlsi Consultants Ltd High performance process technology
JP2582519B2 (ja) * 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション バイポーラ・トランジスタおよびその製造方法
JPH06216144A (ja) * 1992-12-03 1994-08-05 Hewlett Packard Co <Hp> バイポーラ・トランジスタ
US5485033A (en) * 1993-04-07 1996-01-16 U.S. Philips Corporation Lateral transistor having a particular emitter structure
JPH07106412A (ja) * 1993-10-07 1995-04-21 Toshiba Corp 半導体装置およびその製造方法
JP3506632B2 (ja) * 1999-03-25 2004-03-15 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
SE518710C2 (sv) * 2000-06-26 2002-11-12 Ericsson Telefon Ab L M Förfarande för att förbättra transistorprestanda samt transistoranordning och integrerad krets
US6967144B1 (en) 2001-06-20 2005-11-22 National Semiconductor Corporation Low doped base spacer for reduction of emitter-base capacitance in bipolar transistors with selectively grown epitaxial base
EP1417714B1 (en) * 2001-08-06 2008-10-15 Nxp B.V. Bipolar transistor, semiconductor device and method of manufacturing same
KR100864631B1 (ko) * 2007-02-23 2008-10-22 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1509012A (en) * 1974-05-08 1978-04-26 Sony Corp Transistor circuits
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
JPH0691099B2 (ja) * 1986-02-17 1994-11-14 富士通株式会社 ホモ接合型バイポ−ラ・トランジスタ
JP2590236B2 (ja) * 1987-10-07 1997-03-12 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
JPH02138742A (ja) 1990-05-28
US4949145A (en) 1990-08-14
US5041892A (en) 1991-08-20
DE3834223A1 (de) 1989-04-27
JP2590236B2 (ja) 1997-03-12

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