KR970004555B1 - 초전도성 박층 - Google Patents
초전도성 박층 Download PDFInfo
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- KR970004555B1 KR970004555B1 KR1019880009433A KR880009433A KR970004555B1 KR 970004555 B1 KR970004555 B1 KR 970004555B1 KR 1019880009433 A KR1019880009433 A KR 1019880009433A KR 880009433 A KR880009433 A KR 880009433A KR 970004555 B1 KR970004555 B1 KR 970004555B1
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- thin layer
- substrate
- yba
- superconducting
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- 239000000758 substrate Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000010587 phase diagram Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 0 CCC(CC(C)*C)C(CC)C(C(**O)*C1*C*(*2)C2C1)*(C(C)(C)C)=* Chemical compound CCC(CC(C)*C)C(CC)C(C(**O)*C1*C*(*2)C2C1)*(C(C)(C)C)=* 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910017768 LaF 3 Inorganic materials 0.000 description 1
- -1 Ta 2 O 5 Inorganic materials 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/93—Electric superconducting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/703—Microelectronic device with superconducting conduction line
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/704—Wire, fiber, or cable
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
요약없음
Description
제1도는 Y2O3-BaO-CuO 위상 다이아그램.
제2도는 본 발명에 따른 박층의 온도의 함수에 대한 저항을 도시.
제3도는 본 발명에 따르지 않는 산화 알루미늄의 기판에 박층의 온도 함수에 대한 저항을 도시.
본 발명은 YBa2Cu3O7-δ의 초전도성 박층에 관한 것이다.
δ=0.1-0.5인 물질은 거의 90K 보다 낮은 온도의 초전도성이다.
이러한 초전도성 박층은 물리학 회보 비, 35(16), 페이지 8821 내지 8823(1987) 에르. 베. 라이보비츠 등에 의해 "얇은 초전도성 산화막"에 기술된다. 사파이어(산화 알루미늄) 또는 산화 마그네슘을 기판으로써 사용된다. 박층은 진공중에서 전자빔 농축에 의해 제조된다.
또한 산화 알루미늄상에 초전도성 박층의 제조는 알.에이취.하몬드 등에 의해 "전자빔 농축에 의해 페로브스키트 초전체도의 초전도성 박막"에 기술되고, 1987년 4월 23일과 24일 아나하임에서 고온 초전도체에 대해 MRS 심포지움에서도 있었다. 기판과 초전도성 박층 사이의 확산을 억제하기 위해서, 버퍼층은 MgO, Ta2O5, LaF3또는 Zro2로 구성된 것을 사용한다.
YBa2Cu3O7-δ의 초전도성 박층을 제공하기 위해 사용된 다른 기판물질은 스트론튬 티탄산염과 귀금속, 예를들면 금과 은이다.
초전도성 박층의 침착후에 이것은 산화조건에 고온으로 길어진 처리를 여전히 받게 된다. 그 다음에 문제는 여러 경우에 초전도성 화합물이 초전도성 특성을 희생시키는 기판과 반응하여서 발생한다. 천이 온도 Tc대 초전도성 반응은 더 낮아지며 천이는 덜 경사지게 된다. 특히 금속 예를들면 알루미늄 및 실리콘의 결합은 확실하게 해롭다. 귀금속과 스톤론튬 티탄산염은 더 적합하나, 스톤론튬 티난산염은 또한 YBa2Cu3O7-δ과 반응한다.
본 발명의 목적은 초전도성 박층과 반응의 문제가 발생하지 않는 기판물질을 제공하는 것이다.
본 발명에 따라 이러한 목적은 적어도 표면이 YBa2Cu3O7-δ의 분리선상에 위치된 Y2O3-BaO-CuO 위상 다이아그램의 합성물을 갖고 있는 화합물로 구성된 기판상에 박층이 제공되므로서 성취된다.
생각할 수 있는 화합물은 CuO·BaCuO2및 Y2BaCuO5이다.CuO의 이용은 YBa2Cu3O7-δ에서 CuO의 초과와 Tc의 감소를 초래할 것이다. 실제로 BaCuO2의 이용은 차이점들이 존재하는데 왜냐하면 이것은 물에서 맹렬히 반응을 하기 때문이다.
특히 양호한 결과는 표면 Y2BaCuO5로 구성된 기판을 이용하여 얻어진다.
본 발명은 첨부된 도면과 실시예를 참조로 더욱 상세히 기술할 것이다.
실시예
YBa2Cu3O7-δ의 층은 Y2BaCuO5의 기판에 플라즈마 스퍼터링에 의해 제공된다. 박층의 준비에 대안 모드는 전자빔 침착, 레이저 침착 및 스퍼터링이다. 층은 24시간동안 900℃ 온도가 유지되고 그 다음에 산소에서 산화조건으로 천천히(8시간에 20℃) 냉각시킨다. 이러한 처리후 8
0.3 을 가진 초전도성 물질에 양호한 산소양을 얻는 것을 필요하다. 구리 원자의 원자가에서 뿐만 아니라 이것은 양호한 결과를 얻는데 중요하다. 금속, 예를들면 알루미늄 및 실리콘의 존재의 손해 효과는 산소양과 구리원자가의 요란에 의해 설명 가능하다.
제1도는 YBa2Cu3O7-δ과 Y2BaCuO5가 기록되고 화합물이 위상 다이아그램의 분리선에 존재하는 Y2O3-BaO-CuO 위상 다이아그램을 도시한다.
제2도는 Y2BaCuO5의 기판상에 YBa2Cu3O7-δ의 발명에 따라 층의 온도의 함수로써 전기 저항의 측정 결과를 도시한다. 거의 90K인 천이는 특히 경사진다.
비교를 위해 제3되는 본 발명에 따르지 않는 사파이어의 기판상에 YBa2Cu3O7-δ의 층의 온도 함수로서 저항의 측정 결과를 도시한다. 천이는 더 낮은 온도에서 있으며 저항 R=0가 40K 보다 더 낮은 온도에서만 도달되도록 더 넓어진다.
Claims (2)
- YBa2Cu3O7-δ의 초전도성 박층에 있어서, 박층은 적어도 표면이 YBa2Cu3O7-δ을 가진 분리선상에 위치되는 Y2O3-BaO-CuO 위상 다이아그램에 합성물을 갖고 있는 화합물로 구성된 기판에 제공되는 것을 특징으로 하는 초전도성 박층.
- 제1항에 청구된 바와같은 초전도성 박막에 있어서, 기판의 표면은 Y2BaCuO5로 구성되는 것을 특징으로하는 초전도성 박막.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8701779 | 1987-07-28 | ||
| NL8701779A NL8701779A (nl) | 1987-07-28 | 1987-07-28 | Supergeleidende dunne laag. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR890002907A KR890002907A (ko) | 1989-04-11 |
| KR970004555B1 true KR970004555B1 (ko) | 1997-03-29 |
Family
ID=19850384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880009433A KR970004555B1 (ko) | 1987-07-28 | 1988-07-27 | 초전도성 박층 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4948779A (ko) |
| EP (1) | EP0301646B1 (ko) |
| JP (1) | JP2760994B2 (ko) |
| KR (1) | KR970004555B1 (ko) |
| CN (1) | CN1030997A (ko) |
| DE (1) | DE3871871T2 (ko) |
| NL (1) | NL8701779A (ko) |
| SU (1) | SU1632382A3 (ko) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0406126B2 (en) * | 1989-06-30 | 1997-12-17 | Sumitomo Electric Industries, Ltd. | Substrate having a superconductor layer |
| US5232904A (en) * | 1989-07-19 | 1993-08-03 | Ford Motor Company | Materials having a zero resistance transition temperature above 200 K and method for maintaining the zero resistance property |
| JP2767298B2 (ja) * | 1989-09-05 | 1998-06-18 | 財団法人生産開発科学研究所 | 積層薄膜体及びその製造法 |
| JPH03150218A (ja) * | 1989-11-07 | 1991-06-26 | Sumitomo Electric Ind Ltd | 超電導薄膜の作製方法 |
| JPH0834320B2 (ja) * | 1990-02-02 | 1996-03-29 | 株式会社日立製作所 | 超電導素子 |
| US5380704A (en) * | 1990-02-02 | 1995-01-10 | Hitachi, Ltd. | Superconducting field effect transistor with increased channel length |
| US5149681A (en) * | 1990-05-14 | 1992-09-22 | General Atomics | Melt texturing of long superconductor fibers |
| US5284825A (en) * | 1990-05-14 | 1994-02-08 | General Atomics | Contaminant diffusion barrier for a ceramic oxide superconductor coating on a substrate |
| JPH0472777A (ja) * | 1990-07-13 | 1992-03-06 | Sumitomo Electric Ind Ltd | 超電導デバイス用基板 |
| DE69113010T2 (de) * | 1990-12-19 | 1996-05-09 | At & T Corp | Artikel mit supraleiter/isolator Lagenstruktur und Verfahren zur Herstellung des Artikels. |
| DE69132972T2 (de) * | 1991-01-07 | 2003-03-13 | Ibm | Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung |
| US5310705A (en) * | 1993-01-04 | 1994-05-10 | The United States Of America As Represented By The United States Department Of Energy | High-field magnets using high-critical-temperature superconducting thin films |
| US5872081A (en) * | 1995-04-07 | 1999-02-16 | General Atomics | Compositions for melt processing high temperature superconductor |
| CN1082231C (zh) * | 1997-09-15 | 2002-04-03 | 电子科技大学 | 钇钡铜氧高温超导双面外延薄膜制备方法和装置 |
| US6541136B1 (en) * | 1998-09-14 | 2003-04-01 | The Regents Of The University Of California | Superconducting structure |
| KR102144397B1 (ko) * | 2020-04-13 | 2020-08-12 | 조인석 | 일회용 용기의 종이뚜껑 |
-
1987
- 1987-07-28 NL NL8701779A patent/NL8701779A/nl not_active Application Discontinuation
-
1988
- 1988-07-18 EP EP88201551A patent/EP0301646B1/en not_active Expired - Lifetime
- 1988-07-18 DE DE8888201551T patent/DE3871871T2/de not_active Expired - Fee Related
- 1988-07-25 JP JP63183744A patent/JP2760994B2/ja not_active Expired - Lifetime
- 1988-07-26 US US07/224,109 patent/US4948779A/en not_active Expired - Fee Related
- 1988-07-27 KR KR1019880009433A patent/KR970004555B1/ko not_active IP Right Cessation
- 1988-07-28 SU SU884356251A patent/SU1632382A3/ru active
- 1988-07-28 CN CN88104739A patent/CN1030997A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0301646B1 (en) | 1992-06-10 |
| SU1632382A3 (ru) | 1991-02-28 |
| DE3871871D1 (de) | 1992-07-16 |
| NL8701779A (nl) | 1989-02-16 |
| DE3871871T2 (de) | 1993-01-14 |
| JP2760994B2 (ja) | 1998-06-04 |
| US4948779A (en) | 1990-08-14 |
| EP0301646A1 (en) | 1989-02-01 |
| JPS6451327A (en) | 1989-02-27 |
| CN1030997A (zh) | 1989-02-08 |
| KR890002907A (ko) | 1989-04-11 |
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