CN1018115B - 超导陶瓷图案及其制造方法 - Google Patents
超导陶瓷图案及其制造方法Info
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- CN1018115B CN1018115B CN88102320A CN88102320A CN1018115B CN 1018115 B CN1018115 B CN 1018115B CN 88102320 A CN88102320 A CN 88102320A CN 88102320 A CN88102320 A CN 88102320A CN 1018115 B CN1018115 B CN 1018115B
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- 239000000919 ceramic Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 4
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 34
- 239000012528 membrane Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 10
- 239000007788 liquid Substances 0.000 abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 5
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 32
- 239000002887 superconductor Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 8
- 230000000737 periodic effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229960004424 carbon dioxide Drugs 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种超导陶瓷图案及其制造方法。采用离子注入法将杂质掺入超导陶瓷的一个预定部分,从而降低或破坏掺杂区的起始Tc。在某一工作温度下,杂质掺杂区表现出非超导性,而其它未被掺杂的区域保持超导性。
Description
本发明涉及超导体领域,并且更具体地涉及超导陶瓷图案及其制造方法。
通常使用Nb-Ge金属材料(例如Nb3Ge)等作为超导材料。因为为获得这种普通超导材料的超导性需要非常低的温度,因而使其运行费用非常高,所以这类超导材料的应用受到限制。
此外,近年来已经知道一些呈现超导性能的陶瓷材料。但是,这些超导材料还仅仅是坯料形式,到目前为止仍未产生薄膜形式的这类超导材料。
另一方面,已经知道一些半导体器件,它们在同一基片上备有大量半导体集成电路元件。
近几年来,发展具有高速操作能力的、越来越精细的半导体集成电路已经成为一种必要的事。除了这种精细度之外,由于半导体元件中所产生的热而使可靠性降低、以及在发热部件中操作速度的降低也已经成为问题。因此,已经迫切地需要获得一种利用超导陶瓷的改进结构。
因此,本发明的一个目的是提供一种含有若干低的临界温度区域的超导图案。
本发明的另一个目的是提供一种选择性地降低超导氧化物陶瓷
的某些规定部分的临界温度的方法。
根据本发明的一个方面,利用了超导氧化物陶瓷的独特的特性。本发明人已通过实验证明:可以用掺杂的方法来控制超导陶瓷的Tco(在此温度下电阻消失),而其TcOnset(在此温度下电阻率开始下降)几乎保持不变。掺杂部分会具有比较宽的、在Tco和Tc onset之间的转变温度范围。即,可以把超导陶瓷薄膜的各规定部分变成一些低Tc区,这些区域在未掺杂部分的Tco下能够起电阻或有源区的作用。
在各种典型的情况中,可以根据本发明,按照理想配比式(A1-xBx)yCuzOW来制备所用的超导陶瓷,其中A是元素周期表中Ⅲa和Ⅴb族的一个或几个元素、例如各稀土元素,B是元素周期表中Ⅱa族的一个或几个元素,例如包括铍和镁的碱土金属,并且x=0.1至1;y=2.0至4.0,最好是2.5至3.5;z=1.0至4.0,最好是1.5至3.5;以及w=4.0至10.0,最好是6.0至8.0。该普遍公式的若干例子是:
可以用电子束蒸发,阴极真空喷镀,光增强CVD,光增强PVD等等方法在某一表面上形成这些材料。
例如,用阴极真空喷镀的方法在一绝缘表面上淀积0.1至30微米厚的超导陶瓷薄膜。用掩模通过光刻法除去该薄膜的规定
部分,留下那些准备作为各种有源元件(例如Josephson器件)和无源元件(例如电阻或接线)的剩余部分。从该超导陶瓷薄膜的、预定作为低Tc区的规定部分选择性地去除该掩膜;用保留的掩膜为掩蔽对该超导陶瓷膜进行离子注入,以产生低Tc区。离子注入之后,该超导薄膜经过热处理,以补偿由于离子轰击造成的晶体结构的损坏。
图1(A)至1(C)是说明本发明的第一实施例的制造方法的横截面图。
图2是说明本发明的第二实施例的横截面图。
图3是表示本发明的超导陶瓷的电阻率和温度的关系的曲线图。
下面将参考图1(A)至1(C)叙述本发明的超导陶瓷图案的制造方法。图1(A)中,用低频阴极真空喷镀法在由SrTiO3制成的绝缘单晶基片1上淀积0.1至1.0微米厚度的氧化物陶瓷薄膜2,同时选择所使用的靶的成份,使得所淀积的薄膜能够生成一种符合理想配比式(YBa2)Cu3O6-8的薄膜。阴极真空喷镀过程中,使所述基片在氩-氧气氛中加热到700至1000℃(例如850℃)。控制淀积条件(包括靶成份的制备),以保持所淀积的陶瓷薄膜2中所含杂质(Si)的数量不超过百万分之100(100ppm),最好不超过10ppm,所述杂质是在以下步骤中准备有意地加入该陶瓷薄膜的。
完成阴极真空喷镀之后,陶瓷薄膜2在氧化气氛中以800至1000℃温度烧制5至50小时,以便使该陶瓷薄膜转变成超导单晶陶瓷薄膜。图3中所画出的曲线20表示根据实验的、烧制后的陶瓷薄膜1的温度-电阻率关系曲线,如曲线中所示,在Tc
22(在该温度下电阻率等于零)和Tc onset 21(在该温度下电阻率急剧下降)之间出现有一转变区23。
然后,用离子注入法,用复盖薄膜2〔图1(B)〕的光致抗蚀剂掩模3,将硅掺入超导陶瓷薄膜2的部分5。杂质浓度是5×1015至2×1022原子/Cm3,例如5×1019原子/Cm3。此后,该陶瓷薄膜再次在氧化气氛中和700至1000℃的温度下烧制。这种热处理导致杂质的氧化,并因此降低了Tco。当该陶瓷薄膜中的一部分硅被氧化,使该超导陶瓷含有0.1%的氧化硅时,抗蚀剂3也同时以二氧化碳和水的形式出现。该超导陶瓷薄膜的掺杂部分11含有大约99%的基本成份(等于未掺杂部分的成份)。根据实验,由于掺杂工艺的不同,该超导陶瓷薄膜的电阻率-温度关系曲线从曲线20变化到曲线20′。正如从曲线20′所看到的,Tc移到比较低的温度22′,而Tc onset变化不那么大。结果,在掺杂部分中,转变范围23′变宽了。在该情况下,在液氮温度25下,该超导陶瓷薄膜处在转变状态中、此刻具有一定的电阻率26。可以通过调节掺杂的数量来控制临界温度的移动。在随后的处理过程中,甚至在经过700至1000℃高温处理之后,掺杂部分11仍保持比较低的Tco。
准备加入超导陶瓷中的其他杂质的例子有:Al,Mg,Ga,Ge,Ti,Zr,Fe,Ni,Co,B和P。可以组合使用多种杂质。应当使所选用的掺杂密度高于该陶瓷薄膜中已经存在的密度,或者可以把那些在该薄膜中确实没有的杂质加入该薄膜中。
现在将参考图2说明根据本发明制造的另一种图案。在半导体基片1中预先生成一些晶体管或其他器件。在基片1的上表面上生
成第一绝缘薄膜6、并构成图案。该绝缘薄膜6由用氧化硅构成的下层薄膜8和用氮化硅构成的上层薄膜9组成。
为了在基片1上构成超导电路,首先象上文实施例中那样用阴极真空喷镀法在基片1的绝缘薄膜6上淀积一层超导氧化物陶瓷薄膜,并用光刻法构成图案。然后,用与上文说明的相同的方法给该陶瓷薄膜掺入离子杂质、以产生在液氮温度下的超导接线10和10′以及低Tc的区域11(该区域可以选择性地用作电阻或有源区)。在该第二实施例中,使陶瓷薄膜在比前一实施例低的温度下经受高温处理,因此,该超导陶瓷图案最后具有多晶结构。该半导体基片上的各器件通过所述超导图案内连。设计制造条件,使得在液氮温度下各掺杂区具有一定的电阻率,而各非掺杂区具有超导性。
在基片1的各淀积薄膜上形成第二绝缘薄膜9′以及另一绝缘薄膜12,薄膜12填满由上述淀积薄膜形成的凹坑、从而形成一个平的上表面。用光刻法在绝缘薄膜9′和12上形成各开口7′。用和第一实施例中所用的相同的方法在绝缘薄膜9′和12上淀积第二超导陶瓷薄膜13。用光刻法使第二超导薄膜构成图案。第一和第二超导陶瓷薄膜通过各开口7′相互连接。
当淀积陶瓷薄膜,然后通过烧制把该薄膜转变成所要求的超导薄膜时,在所述转变之前可对所述陶瓷薄膜进行离子注入。在该情况下,在烧制之后就最终形成了低Tc区和高Tc区。
本发明的包含超导图案的上述各器件预定工作在液氮温度下。但是,随着将来可能的发展,构成具有更高临界温度,例如干冰温度的超导陶瓷薄膜是可能的。通过简单地用可能发展的方法代替所
述超导体形成方法,可容易地把本发明用于那种场合。此外,虽然上述超导陶瓷薄膜的掺杂区至今仍然是一种超导材料,但是它不是必然的超导材料,而可以是一种正常的导电材料。即,可以进行根据本发明的掺杂、以使所述超导结构消失。
虽然上述半导体基片备有各有源器件,但是也可以使用其上表面镀有非氧化物薄膜,例如50至5000埃厚度的氮化硅的陶瓷基片。例如用YSZ(已经用钇稳定化处理的锆石)基片来代替,该基片的热膨胀系数基本上与所述陶瓷相同。
还可以按照理想配比式(A1-xBx)yCuzOw来制备本发明所使用的超导陶瓷,式中A是元素周期表的Ⅲa族的一个或几个元素,例如各稀土元素,B是元素周期表的Ⅱa族的一个或几个元素,例如包括铍和镁的各碱土金属,以及x=0至1;y=2.0至4.0,最好是2.5至3.5;z=1.0至4.0,最好是1.5至3.5;以及w=4.0至10.0,最好是6.0至8.0。一个例子是YBa2Cu3O6-8。还可以按照理想配比式(A1-xBx)yCuzOW来制备本发明所用的超导陶瓷,其中A是元素周期表的Vb族的一个或几个元素,例如Bi、Sb和As,B是元素周期表Ⅱa族的一个或几个元素,例如包括铍和镁的碱土金属,以及x=0.3至1,y=2.0至4.0,最好是2.5至3.5;z=1.0至4.0,最好是1.5至3.5;以及w=4.0至10.0,最好是6.0至8.0。该普遍公式的一些例子是BiSrCaCu2Ox以及Bi4Sr3Ca3Cu4Ox。测量了一些遵守公式Bi4SryCa3Cu4Ox(y是大约1.5)的Tc onset和Tco样品;测量结果是40至60°K,此值不算高。
用遵守理想配比式Bi4Sr4Ca2Cu4Ox和Bi2Sr3Ca2Cu2Ox的一些样品,获得了比较高的临界温度。表示氧的比例的数是6至10,例如大约8.1。
虽然已经对若干实施例进行了描述,但是,本发明应当仅仅由所附权利要求书所限定,而不应当由各具体实施例所限定。例如,可以用MBE(电子束外延生长法)、气相法、印刷法等等代替阴极真空喷镀法来形成所述超导陶瓷。
Claims (12)
1、一种氧化物超导陶瓷图案,包括基片及其上的氧化物超导陶瓷薄膜,其特征在于在一基片上的所说超导陶瓷至少有一区域掺以杂质,以便改变该掺杂区域的起始临界温度Tco,使其低于未掺以所说杂质的其它区域的Tco。
2、根据权利要求1的图案,所说杂质是从Si、Al、Mg、Ga、Ge、Ti、Zr、Fe、Ni、Co、B和P中选择的一种或几种元素。
3、权利要求1的图案,其特征在于:所述杂质以氧化物的形式包含在所述掺杂区中。
4、权利要求1的图案,其特征在于:所述基片是半导体基片。
5、权利要求1的图案,其特征在于:所述掺杂物杂质浓度是5×1015至2×1022原子/cm3。
6、一种产生超导陶瓷图案的方法,它包括,
按照超导性所需要的成份,在基片上生成氧化物陶瓷薄膜;
用离子注入技术将杂质掺入所述陶瓷薄膜的一部分中;以及
将所述薄膜在氧化气氛中热退火,以使所述陶瓷薄膜具有超导结构。
7、权利要求6的方法,其特征在于进一步包括所述陶瓷薄膜的图案形成步骤。
8、权利要求6的方法,其特征在于:选择掺杂浓度,使它高于所述陶瓷薄膜的原始相应杂质浓度。
9、权利要求8的方法,其特征在于:所述陶瓷薄膜的生成是这样进行的,使得所述原始杂质浓度被限制在不高于百万分之100。
10、权利要求6的方法,其特征在于:所述陶瓷薄膜的生成是用阴极真空喷镀法进行的。
11、权利要求6的方法,其特征在于:所述陶瓷薄膜的生成是用印刷法,电子束外延生长方法或气相法进行的。
12、权利要求6的方法,其特征在于:所述杂质是从Si,Al,Mg,Ga,Ge,Ti,Zr,Fe,Ni,Co,B和P中选择的一种或几种元素。
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JP093732/87 | 1987-04-15 | ||
JP62093732A JP2670554B2 (ja) | 1987-04-15 | 1987-04-15 | 酸化物超電導材料の作製方法 |
JP093733/87 | 1987-04-15 | ||
JP62093733A JPS63258083A (ja) | 1987-04-15 | 1987-04-15 | 超電導材料の作製方法 |
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US (2) | US5098884A (zh) |
EP (1) | EP0287383B2 (zh) |
KR (1) | KR910004994B1 (zh) |
CN (1) | CN1018115B (zh) |
AU (1) | AU599223B2 (zh) |
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US5248658A (en) * | 1987-04-07 | 1993-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a superconducting oxide pattern by laser sublimation |
AU599223B2 (en) * | 1987-04-15 | 1990-07-12 | Semiconductor Energy Laboratory Co. Ltd. | Superconducting ceramic pattern and its manufacturing method |
US5401716A (en) * | 1987-04-15 | 1995-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing superconducting patterns |
US4900716A (en) * | 1987-05-18 | 1990-02-13 | Sumitomo Electric Industries, Ltd. | Process for producing a compound oxide type superconducting material |
US5225394A (en) * | 1987-08-31 | 1993-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing high Tc superconducting circuits |
FR2641530B2 (fr) * | 1988-01-29 | 1993-05-28 | Centre Nat Rech Scient | Nouveau materiau composite, procede de fabrication et application |
EP0358879A3 (en) * | 1988-09-13 | 1991-02-27 | Hewlett-Packard Company | Method of making high density interconnects |
JPH06291374A (ja) * | 1993-03-31 | 1994-10-18 | Sumitomo Electric Ind Ltd | ジョセフソン接合素子 |
WO1994027329A1 (en) * | 1993-05-14 | 1994-11-24 | The University Of British Columbia | Fabrication of oxide superconductor devices by impurity ion implantation |
JPH07263767A (ja) | 1994-01-14 | 1995-10-13 | Trw Inc | イオンインプランテーションを用いたプレーナ型の高温超伝導集積回路 |
US5912503A (en) * | 1997-01-02 | 1999-06-15 | Trw Inc. | Planar in-line resistors for superconductor circuits |
WO2005041264A2 (en) * | 2003-10-23 | 2005-05-06 | Star Cryoelectronics, Llc | Charge dissipative dielectric for cryogenic devices |
KR100595855B1 (ko) * | 2004-12-29 | 2006-06-30 | 동부일렉트로닉스 주식회사 | 알루미늄 증착 콘택트 형성 방법 |
US7615385B2 (en) | 2006-09-20 | 2009-11-10 | Hypres, Inc | Double-masking technique for increasing fabrication yield in superconducting electronics |
CN102437281A (zh) * | 2011-12-08 | 2012-05-02 | 南京大学 | 一种超导隧道结及其制备方法 |
CN111063788B (zh) * | 2019-11-27 | 2022-06-07 | 中国科学院上海微系统与信息技术研究所 | 一种超导转变边探测器的制备方法 |
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US3346425A (en) * | 1964-04-01 | 1967-10-10 | Gen Electric | Superconductors |
US4316785A (en) * | 1979-11-05 | 1982-02-23 | Nippon Telegraph & Telephone Public Corporation | Oxide superconductor Josephson junction and fabrication method therefor |
JPS58122724A (ja) * | 1982-01-18 | 1983-07-21 | Toshiba Corp | 半導体素子の製造方法 |
JPS61191070A (ja) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | 半導体装置の製造方法 |
JPS6215864A (ja) * | 1985-07-15 | 1987-01-24 | Hitachi Ltd | 太陽電池の製造方法 |
US4732867A (en) * | 1986-11-03 | 1988-03-22 | General Electric Company | Method of forming alignment marks in sapphire |
US4826808A (en) * | 1987-03-27 | 1989-05-02 | Massachusetts Institute Of Technology | Preparation of superconducting oxides and oxide-metal composites |
US4960751A (en) * | 1987-04-01 | 1990-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Electric circuit having superconducting multilayered structure and manufacturing method for same |
AU599223B2 (en) * | 1987-04-15 | 1990-07-12 | Semiconductor Energy Laboratory Co. Ltd. | Superconducting ceramic pattern and its manufacturing method |
CA1328242C (en) * | 1987-05-18 | 1994-04-05 | Nobuhiko Fujita | Process for manufacturing a superconductor and a method for producing a superconducting circuit |
US4837609A (en) * | 1987-09-09 | 1989-06-06 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices having superconducting interconnects |
JPH01290526A (ja) * | 1988-05-18 | 1989-11-22 | Seiko Epson Corp | 高温超電導材料 |
EP0508844B1 (en) * | 1991-03-11 | 1997-05-21 | Sumitomo Electric Industries, Ltd. | Superconducting thin film having at least one isolated superconducting region formed of oxide superconductor material and method for manufacturing the same |
-
1988
- 1988-04-13 AU AU14573/88A patent/AU599223B2/en not_active Ceased
- 1988-04-15 CN CN88102320A patent/CN1018115B/zh not_active Expired
- 1988-04-15 KR KR1019880004307A patent/KR910004994B1/ko not_active IP Right Cessation
- 1988-04-15 DE DE3879536T patent/DE3879536T3/de not_active Expired - Lifetime
- 1988-04-15 EP EP88303404A patent/EP0287383B2/en not_active Expired - Lifetime
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1990
- 1990-03-05 US US07/488,252 patent/US5098884A/en not_active Expired - Lifetime
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KR910004994B1 (ko) | 1991-07-20 |
US5098884A (en) | 1992-03-24 |
CN88102320A (zh) | 1988-11-02 |
EP0287383B2 (en) | 2002-08-21 |
EP0287383A3 (en) | 1989-04-05 |
EP0287383B1 (en) | 1993-03-24 |
EP0287383A2 (en) | 1988-10-19 |
AU599223B2 (en) | 1990-07-12 |
DE3879536D1 (de) | 1993-04-29 |
DE3879536T2 (de) | 1993-07-01 |
AU1457388A (en) | 1988-10-20 |
US5877124A (en) | 1999-03-02 |
DE3879536T3 (de) | 2003-07-24 |
KR880013190A (ko) | 1988-11-30 |
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