KR970003700A - Manufacturing method of MOS transistor - Google Patents
Manufacturing method of MOS transistor Download PDFInfo
- Publication number
- KR970003700A KR970003700A KR1019950019135A KR19950019135A KR970003700A KR 970003700 A KR970003700 A KR 970003700A KR 1019950019135 A KR1019950019135 A KR 1019950019135A KR 19950019135 A KR19950019135 A KR 19950019135A KR 970003700 A KR970003700 A KR 970003700A
- Authority
- KR
- South Korea
- Prior art keywords
- source
- ion implantation
- drain region
- titanium
- drain
- Prior art date
Links
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
1. 청구 범위에 지재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION
반도체 소자의 제조 방법.Method of manufacturing a semiconductor device.
2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention
종래의 MOSFET 제조 방법은 소스/드레인 영역의 계면과 티타늄실리사이드의 계면과의 거리가 너무 짧아 상기 티타늄실리사이드의 형성 수행시 소스/드레인 영역에 주입된 이온들이 외방확산되어 소스/드레인 영역의 계면과 티타늄실리사이드의 계면간의 저항이 증가하여 결국 모스 트랜지스터의 전기적 특성을 악화시키는 문제점을 해결하고자 함.In the conventional MOSFET fabrication method, the distance between the interface of the source / drain region and the titanium silicide interface is too short. Thus, when the titanium silicide is formed, ions implanted into the source / drain region are diffused outward so that the interface between the source / drain region and titanium To solve the problem that the resistance between silicide's interface increases and eventually worsens the electrical characteristics of MOS transistor.
3. 발명의 해결방법의 요지3. Summary of Solution to Invention
측벽 스페이서를 이용하여 두번에 걸친 소스/드레인 이온 주입을 실시하고, 티탄실리사이드 공정을 진행하여 소스/드레인 영역에 주입된 이온들의 외방확산을 방지하므로써 소자의 특성이 양호한 MOSFET 제조 방법을 제공하고자 함.The present invention provides a method for fabricating a MOSFET having good device characteristics by performing two-time source / drain ion implantation using sidewall spacers and a titanium silicide process to prevent outward diffusion of ions implanted into the source / drain region.
4. 발명의 중요한 용도4. Important uses of the invention
반도체 소자의 제조, 특히 모스 트랜지스터의 제조에 이용됨.Used in the manufacture of semiconductor devices, in particular in the manufacture of MOS transistors.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2E도는 본 발명의 모스 트랜지스터의 제조 방법에 따른 제조 공정도.2A to 2E are manufacturing process diagrams according to the manufacturing method of the MOS transistor of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019135A KR970003700A (en) | 1995-06-30 | 1995-06-30 | Manufacturing method of MOS transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019135A KR970003700A (en) | 1995-06-30 | 1995-06-30 | Manufacturing method of MOS transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970003700A true KR970003700A (en) | 1997-01-28 |
Family
ID=66526187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950019135A KR970003700A (en) | 1995-06-30 | 1995-06-30 | Manufacturing method of MOS transistor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970003700A (en) |
-
1995
- 1995-06-30 KR KR1019950019135A patent/KR970003700A/en not_active Application Discontinuation
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