KR970002415A - 반도체 장치의 제조 방법 및 액정표시장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 및 액정표시장치의 제조 방법 Download PDFInfo
- Publication number
- KR970002415A KR970002415A KR1019960023499A KR19960023499A KR970002415A KR 970002415 A KR970002415 A KR 970002415A KR 1019960023499 A KR1019960023499 A KR 1019960023499A KR 19960023499 A KR19960023499 A KR 19960023499A KR 970002415 A KR970002415 A KR 970002415A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- liquid crystal
- crystal display
- display device
- semiconductor device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP95-158241 | 1995-06-23 | ||
JP15824195A JPH098313A (ja) | 1995-06-23 | 1995-06-23 | 半導体装置の製造方法および液晶表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970002415A true KR970002415A (ko) | 1997-01-24 |
KR100246984B1 KR100246984B1 (ko) | 2000-03-15 |
Family
ID=15667353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960023499A KR100246984B1 (ko) | 1995-06-23 | 1996-06-21 | 반도체 장치의 제조 방법 및 액정표시장치의 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5937304A (ko) |
JP (1) | JPH098313A (ko) |
KR (1) | KR100246984B1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW374196B (en) * | 1996-02-23 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same |
EP0801427A3 (en) * | 1996-04-11 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device |
US6499425B1 (en) * | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
US6780687B2 (en) * | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
US6403905B1 (en) * | 2000-02-02 | 2002-06-11 | Advanced Micro Devices, Inc. | Reticle stocking and sorting management system |
US6737672B2 (en) * | 2000-08-25 | 2004-05-18 | Fujitsu Limited | Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus |
JP4382375B2 (ja) * | 2003-03-13 | 2009-12-09 | Nec液晶テクノロジー株式会社 | 薄膜トランジスタの製造方法 |
KR100560793B1 (ko) * | 2004-04-27 | 2006-03-13 | 삼성에스디아이 주식회사 | 반도체 소자 형성 방법 |
US20100015788A1 (en) * | 2007-09-10 | 2010-01-21 | Yuichiro Sasaki | Method for manufacturing semiconductor device |
US10020187B2 (en) | 2012-11-26 | 2018-07-10 | Applied Materials, Inc. | Apparatus and methods for backside passivation |
KR102216678B1 (ko) * | 2014-07-14 | 2021-02-18 | 삼성디스플레이 주식회사 | 박막트랜지스터 제조방법 |
US9704712B1 (en) * | 2015-12-30 | 2017-07-11 | Infineon Technologies Ag | Method of making a semiconductor device formed by thermal annealing |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60105216A (ja) * | 1983-11-11 | 1985-06-10 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
JP2623276B2 (ja) * | 1988-01-22 | 1997-06-25 | 株式会社日立製作所 | 薄膜半導体装置の製造方法 |
DE69030822T2 (de) * | 1989-02-14 | 1997-11-27 | Seiko Epson Corp | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
JP2731236B2 (ja) * | 1989-05-09 | 1998-03-25 | 三菱電機株式会社 | 薄膜結晶層を有する半導体装置の製造方法 |
JPH0324717A (ja) * | 1989-06-22 | 1991-02-01 | Kyocera Corp | 単結晶薄膜の製造方法 |
JP2973492B2 (ja) * | 1990-08-22 | 1999-11-08 | ソニー株式会社 | 半導体薄膜の結晶化方法 |
JPH04286369A (ja) * | 1991-03-15 | 1992-10-12 | Seiko Epson Corp | 半導体装置及びその製造方法 |
US5578520A (en) * | 1991-05-28 | 1996-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for annealing a semiconductor |
US5424230A (en) * | 1992-02-19 | 1995-06-13 | Casio Computer Co., Ltd. | Method of manufacturing a polysilicon thin film transistor |
US5366926A (en) * | 1993-06-07 | 1994-11-22 | Xerox Corporation | Low temperature process for laser dehydrogenation and crystallization of amorphous silicon |
-
1995
- 1995-06-23 JP JP15824195A patent/JPH098313A/ja active Pending
-
1996
- 1996-06-19 US US08/665,978 patent/US5937304A/en not_active Expired - Fee Related
- 1996-06-21 KR KR1019960023499A patent/KR100246984B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5937304A (en) | 1999-08-10 |
JPH098313A (ja) | 1997-01-10 |
KR100246984B1 (ko) | 2000-03-15 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20061124 Year of fee payment: 8 |
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LAPS | Lapse due to unpaid annual fee |