KR960706694A - 콘크리트 태양 전지(Concrete solar cell) - Google Patents
콘크리트 태양 전지(Concrete solar cell)Info
- Publication number
- KR960706694A KR960706694A KR1019960703034A KR19960703034A KR960706694A KR 960706694 A KR960706694 A KR 960706694A KR 1019960703034 A KR1019960703034 A KR 1019960703034A KR 19960703034 A KR19960703034 A KR 19960703034A KR 960706694 A KR960706694 A KR 960706694A
- Authority
- KR
- South Korea
- Prior art keywords
- photovoltaic material
- particles
- photovoltaic
- layer
- silicon
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract 52
- 238000000034 method Methods 0.000 claims abstract 16
- 239000002245 particle Substances 0.000 claims abstract 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract 11
- 239000010703 silicon Substances 0.000 claims abstract 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 8
- 239000004568 cement Substances 0.000 claims abstract 7
- 239000011159 matrix material Substances 0.000 claims abstract 6
- 239000011856 silicon-based particle Substances 0.000 claims abstract 4
- 238000000137 annealing Methods 0.000 claims abstract 2
- 239000004020 conductor Substances 0.000 claims 6
- 238000005275 alloying Methods 0.000 claims 3
- 230000008018 melting Effects 0.000 claims 3
- 238000002844 melting Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 239000011398 Portland cement Substances 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 238000005452 bending Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- XFWJKVMFIVXPKK-UHFFFAOYSA-N calcium;oxido(oxo)alumane Chemical group [Ca+2].[O-][Al]=O.[O-][Al]=O XFWJKVMFIVXPKK-UHFFFAOYSA-N 0.000 claims 1
- 238000003490 calendering Methods 0.000 claims 1
- 230000004069 differentiation Effects 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000005496 eutectics Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- 238000000227 grinding Methods 0.000 claims 1
- 239000000314 lubricant Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 239000012634 fragment Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
저렴하고, 강한 콘크리트 태양전지(10)는 매트릭스 층(14)의 주표면들(16 및 18) 속에 봉입되어 이들 밖으로 연장된 광기전성 물질을 포함한다. 매트릭스 층은 일반적으로 고강도의 시멘트질 물질, 예를 들면, 큰 결합이 없는 시멘트를 포함한다. 광기전성 물질은 일반적으로 실리콘 웨이퍼로의 슬라이싱에 부적합한 주괴 단편 부분으로부터 볼 밀된 고저항 단결성 실리콘 입자들(12)을 포함한다. 주괴 단편 부분은 저온 어닐링 방법에 의해 전기적으로 활성화되어 n-형 실리콘, 심지어는 p-형 도판트(dopant)를 포함하는 실리콘 결정을 생성하는 침전되지 않은 용해된 산소를 포함한다. 매트릭스 층의 배면에 위치한 알루미늄 시트(28)는 실리콘 입자들과 함께 간단하게 용융되어 입자의 n-형 영역(24)과 pn 접합을 형성하는 p-형 알루미늄 도핑된 실리콘 영역(22)을 생성한다. 알루미늄 시트는 p-형 영역에 전기적 접촉을 또한 제공한다. 실리콘 입자의 n-형 영역의 돌출되는 매트릭스 층의 전면은 n-형 영역의 pn 접합과 전기로부터의 전류를 전도하는 손가락 모양의 전극(32)에 전기적 접촉을 제공하는 반투명성 인듐 주석 산화물 층(30)으로 피복된다. 전압은 광기전성 입자에 대한 입사광이 인듐 주석 산화물 전도층을 통하여 전하 캐리어를 생성시킬 때 두 전도층 사이에서 발생한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 태양 전지의 평면도이다. 제2도 및 제3도는 제1도의 각 라인 2-2 및 3-3에 따르는 단면도이다.
Claims (25)
- 제1주표면과 제2주표면을 갖는 시멘트질 층, 시멘트질 층에 봉입되어 제1주표면과 제2주표면 밖으로 연장되는 광기전성 물질, 제1주표면에 병렬 연결되어 광기전성 물질과 전기적으로 접촉하는 제1전기전도성 물질 및 제2주표면에 병렬 연결되어 광기전성 물질과 전기적으로 접촉하며 입사광의 일부를 투과하는 제2전기전도성 물질을 포함하는 콘크리트 태양 전지.
- 제1항에 있어서, 시멘트질 층이 칼슘 알루미네이트, 포틀란드(Portland) 시멘트 또는 포졸라닉형(pozzolanic type)인 콘크리트 태양 전지.
- 제1항에 있어서, 시멘트질 층이, 굽힘강도가 10MPa 이상인 시멘트질 물질을 포함하는 콘크리트 태양 전지.
- 제3항에 있어서, 시멘트질 층이 큰 결합이 없는 시멘트질 물질을 포함하는 콘크리트 태양 전지.
- 제3항에 있어서, 광기전성 물질이 실리콘, 탄화규소 또는 인화갈륨을 포함하는 콘크리트 태양 전지.
- 제3항에 있어서, 광기전성 물질이 pn 접합을 포함하는 콘크리트 태양 전지.
- 제3항에 있어서, 광기전성 물질이 쇼트키 장벽 접합을 포함하는 콘크리트 태양 전지.
- 제1항에 있어서, 제1전도성 물질로부터의 몇몇 원자가 광기전성 물질에 용해됨으로써 이의 전기적 특성이 변하는 콘크리트 태양 전지.
- 제1항에 있어서, 광기전성 물질이 pn 접합을 형성하는 p-형 반도체 실리콘과 n-형 반도체 실리콘을 포함하고, 제1전도성 물질이 알루미늄을 포함하고, p-형 물질이 알루미늄 도핑된 실리콘을 포함하는 콘크리트 태양 전지.
- 제1항에 있어서, 제1전도성 물질과 제2전도성 물질이 에너지를 전기화학적으로 저장하기 위한 유체를 포함하는 콘크리트 태양 전지.
- 제1주표면과 제2주표면을 갖는 경질 유전성 매트릭스 층, 경질 유전성 매트릭스 층에 봉입되어 제1주표면과 제2주표면 밖으로 연장되는 광기전성 물질 및 제1주표면과 제2주표면 각각에 병렬 연결되어 광기전성 물질과 전기적으로 접촉하는 제1전기 전도층과 제2전도층을 포함(여기서, 제2주표면은 입사광의 일부를 투과시킨다.)하는 콘크리트 태양 전지.
- 광기전성 물질의 입자들을 제공하고, 광기전성 물질의 입자들을 시멘트 층에 봉입시켜 입자들을 시멘트 층의 주표면 밖으로 연장시키고, 광기전성 물질에 전기적 접촉을 제공함으로 포함하는 콘크리트 태양 전지의 제조방법.
- 제12항에 있어서, 시멘트질 층 속으로의 입자의 봉입이 입자를 큰 결합이 없는 시멘트 층 속에 봉입시키는 것을 포함하는 방법.
- 제12항에 있어서, 입자를 큰 결합이 없는 시멘트 층에 봉입시킴이 시멘트 층의 캘린더링을 포함하는 방법.
- 제12항에 있어서, 광기전성 물질에 전기적 접촉을 제공하는 것이 광기전성 물질을 합금 물질과 접촉시켜 광기전성 물질의 용융 온도를 강하시키고, 광기전성 물질을 합금 재료와 용융시켜 광기전성 물질의 전기적 특성을 변화시킴을 포함하는 방법.
- 제15항에 있어서, 광기전성 물질이 실리콘을 포함하고 합금 물질이 알루미늄을 포함하는 방법.
- 제12항에 있어서, 광기전성 물질의 입자들을 제공하는 것이 반도체 실리콘 입자들을 제공함을 포함하고, 광기전성 물질과의 전기적 접촉을 형성하는 것이 알루미늄 전도층과 전기적으로 접촉을 형성함과 울리미늄-실리콘 공정법(eutectic process)에 의해 광기전성 물질에 pn 접합을 형성함을 포함하는 방법.
- 제12항에 있어서, 광기전성 물질의 입자들을 제공하는 것이 큰 결합이 없는 시멘트 층의 두께보다 약간 두꺼운 입자들을 생산하기 위해 광기전성 물질을 미분시킴을 포함하는 방법.
- 제18항에 있어서, 광기전성 물질의 입자들을 제공하는 것이 최소 캐리어 수명을 증가시킴을 포함하는 방법.
- 제19항에 있어서, 최소 캐리어 수명을 증가시키는 것이 광기전성 물질을 미분시키는 동안 전위(dislocation)를 감소시키지 위해 윤활제를 제공함을 포함하는 방법.
- 제19항에 있어서, 최소 캐리어 수명을 증가시키는 것이 입자들을 어닐링시킴을 포함하는 방법.
- 제19항에 있어서, 최소 캐리어 수명의 증가가 입자들을 에칭시킴을 포함하는 방법.
- 제19항에 있어서, 최소 캐리어 수명의 증가가 입자들에 층을 형성시킴을 포함하는 방법.
- 고저항 p-형 광기전성 물질을 제공하고, 광기전성 물질 중의 전기적으로 불활성인 물질을 활성화하여 p-형 광기전성 물질을 n-형 광기전성 물질로 전환시키고, 광기전성 물질의 표면에 제2물질 층을 병렬 연결하여 광기전성 물질과 제2물질의 계면을 형성시키고, 이들의 계면에서 광기전성 물질과 제2물질을 용융시키고 재응고시켜 광기전성 물질 속에 pn 접합을 형성시킴으로써 제2물질로부터의 원자가 광기전성 물질을 도핑시킴을 포gks하는 콘크리트 태양 전지의 제조방법.
- 제24항에 있어서, 광기전성 물질이 n-형 실리콘을 포함하고, 제2물질이 알루미늄을 포함하고, pn 접합의 형성이 577℃ 알루미늄-실리콘 공정법(eutectic process)을 포함하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/166,307 | 1993-12-10 | ||
| US08/166,307 US5415700A (en) | 1993-12-10 | 1993-12-10 | Concrete solar cell |
| PCT/US1994/013810 WO1995016279A1 (en) | 1993-12-10 | 1994-12-02 | Concrete solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960706694A true KR960706694A (ko) | 1996-12-09 |
Family
ID=22602703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960703034A KR960706694A (ko) | 1993-12-10 | 1994-12-02 | 콘크리트 태양 전지(Concrete solar cell) |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US5415700A (ko) |
| JP (1) | JPH09506472A (ko) |
| KR (1) | KR960706694A (ko) |
| AU (1) | AU686716B2 (ko) |
| CA (1) | CA2177493A1 (ko) |
| DE (1) | DE4499682T1 (ko) |
| NL (1) | NL9420039A (ko) |
| TW (1) | TW279272B (ko) |
| WO (1) | WO1995016279A1 (ko) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5415700A (en) * | 1993-12-10 | 1995-05-16 | State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Concrete solar cell |
| US5668050A (en) * | 1994-04-28 | 1997-09-16 | Canon Kabushiki Kaisha | Solar cell manufacturing method |
| JP3772456B2 (ja) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
| US6013872A (en) * | 1997-04-25 | 2000-01-11 | Bayer Ag | Directionally solidified, multicrystalline silicon, a process for the production thereof and its use, and solar cells containing this silicon and a process for the production thereof |
| DE19818343C1 (de) * | 1998-04-24 | 2000-03-02 | Johann A Kaiser | Verfahren zum kathodischen Korrosionsschutz zur Sanierung von metallarmierten Betonflächen |
| CA2346294C (en) * | 1998-10-09 | 2011-06-28 | The Trustees Of Columbia University In The City Of New York | Solid-state photoelectric device |
| AUPP931799A0 (en) * | 1999-03-18 | 1999-04-15 | Sustainable Technologies Australia Limited | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
| US6265322B1 (en) * | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
| US6437234B1 (en) * | 2000-07-27 | 2002-08-20 | Kyocera Corporation | Photoelectric conversion device and manufacturing method thereof |
| DE10059498A1 (de) * | 2000-11-30 | 2002-06-13 | Infineon Technologies Ag | Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats |
| JP2002368247A (ja) * | 2001-06-01 | 2002-12-20 | Canon Inc | 太陽電池構造体、太陽電池アレイ及び太陽光発電システム |
| JP2004006702A (ja) * | 2002-03-28 | 2004-01-08 | Canon Inc | 太陽電池モジュール設置構造体、太陽電池モジュールアレイ及び太陽光発電システム |
| AU2003268487A1 (en) * | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanocomposites |
| US7078613B2 (en) * | 2002-12-11 | 2006-07-18 | General Electric Company | Structured micro-channel semiconductor electrode for photovoltaic cells |
| US7402747B2 (en) * | 2003-02-18 | 2008-07-22 | Kyocera Corporation | Photoelectric conversion device and method of manufacturing the device |
| CN1327534C (zh) * | 2004-07-23 | 2007-07-18 | 南开大学 | 晶体颗粒太阳电池及其制备方法 |
| DE102004046744B4 (de) * | 2004-09-27 | 2007-05-24 | Atotech Deutschland Gmbh | Verfahren zur Übertragung von Pulvern und Pulverlacken auf Substrate und Verwendung zur Herstellung von Leiterplatten und Solarzellen |
| US7582161B2 (en) | 2006-04-07 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited titanium-doped indium oxide films |
| CN101132027B (zh) * | 2007-09-27 | 2010-09-01 | 南开大学 | 用碎硅片制备的太阳电池及其制备方法 |
| US8017859B2 (en) * | 2007-10-17 | 2011-09-13 | Spansion Llc | Photovoltaic thin coating for collector generator |
| US20090306249A1 (en) * | 2008-05-30 | 2009-12-10 | Optechnology, Inc. | Cementitious composites |
| DE102008040147A1 (de) * | 2008-07-03 | 2010-01-28 | Crystalsol Og | Verfahren zur Herstellung einer Monokornmembran für eine Solarzelle sowie Monokornmembran nebst Solarzelle |
| US7897434B2 (en) * | 2008-08-12 | 2011-03-01 | International Business Machines Corporation | Methods of fabricating solar cell chips |
| DE102008041457A1 (de) | 2008-08-22 | 2010-02-25 | Evonik Degussa Gmbh | Neuartige photovoltaische Zellen aus Nano-Silizium |
| US20100200041A1 (en) * | 2008-09-23 | 2010-08-12 | David Dayton Dearborn | Modular solar photovoltaic canopy system for development of rail vehicle traction power |
| WO2010139435A1 (de) * | 2009-06-06 | 2010-12-09 | Bayer Materialscience Ag | Dachpfanne/dachstein/fassadenelement mit integriertem solarmodul |
| US20120052610A1 (en) * | 2010-09-01 | 2012-03-01 | Gabriel James Tambunga | Total internal reflection energy/heat source |
| WO2013073045A1 (ja) | 2011-11-18 | 2013-05-23 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
| WO2014025826A2 (en) * | 2012-08-06 | 2014-02-13 | Dow Global Technologies Llc | High reliability photo-voltaic device |
| TW201701516A (zh) * | 2014-12-18 | 2017-01-01 | 沙克堤公司 | 用於具有高能量密度之固態能源元件的多重物理量設計 |
| CN104617179B (zh) * | 2015-01-21 | 2016-11-09 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | 一种光电传感器及其制备方法 |
| DE102015108703A1 (de) * | 2015-06-02 | 2016-12-08 | Infineon Technologies Ag | Verfahren zum Bilden einer Mehrzahl von Halbleiterbauelementen auf einer Mehrzahl von Halbleiterwafern |
| EP3205634A1 (en) * | 2016-02-09 | 2017-08-16 | Holcim Technology Ltd. | Method of manufacturing a photovoltaic concrete |
| US10081944B1 (en) * | 2017-09-21 | 2018-09-25 | Newtonoid Technologies, L.L.C. | Shingle clip system and method |
| US10733918B2 (en) | 2018-04-05 | 2020-08-04 | Newtonoid Technologies, L.L.C. | Method of converting a static display to a changing display |
| CN111162133A (zh) * | 2020-01-19 | 2020-05-15 | 成都晔凡科技有限公司 | 叠瓦组件、太阳能电池片和叠瓦组件的制造方法 |
| EP4044425A1 (en) * | 2021-02-15 | 2022-08-17 | Research & Development Concretes SL | Assembly comprising a base and a photovoltaic module and methods for manufacturing it |
| JP2023095724A (ja) * | 2021-12-24 | 2023-07-06 | 恒己 小林 | Ｎ型半導体とｐ型半導体を用いる工法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2904613A (en) * | 1957-08-26 | 1959-09-15 | Hoffman Electronics Corp | Large area solar energy converter and method for making the same |
| US3038952A (en) * | 1959-05-20 | 1962-06-12 | Hoffman Electronics Corp | Method of making a solar cell panel |
| NL6510095A (ko) * | 1965-08-04 | 1967-02-06 | ||
| NL6711002A (ko) * | 1967-08-10 | 1969-02-12 | ||
| US4021323A (en) * | 1975-07-28 | 1977-05-03 | Texas Instruments Incorporated | Solar energy conversion |
| US4116207A (en) * | 1977-07-12 | 1978-09-26 | Solarex Corporation | Solar panel with mat base member |
| DE3071116D1 (en) * | 1979-06-26 | 1985-10-31 | Ici Plc | Cementitious product |
| EP0021681B1 (en) * | 1979-06-29 | 1985-07-10 | Imperial Chemical Industries Plc | Hydraulic cement composition |
| EP0030408B1 (en) * | 1979-12-03 | 1984-12-19 | Imperial Chemical Industries Plc | Hydraulic cement compositions |
| EP0038126B1 (en) * | 1980-04-11 | 1984-08-22 | Imperial Chemical Industries Plc | Cementitious composition and cement product produced therefrom |
| DE3176693D1 (en) * | 1980-12-22 | 1988-05-05 | Ici Plc | Cementitious composition and cementitious product of high flexural strength |
| US4521640A (en) * | 1981-09-08 | 1985-06-04 | Texas Instruments Incorporated | Large area, low temperature process, fault tolerant solar energy converter |
| US4514580A (en) * | 1983-12-02 | 1985-04-30 | Sri International | Particulate silicon photovoltaic device and method of making |
| US4614835A (en) * | 1983-12-15 | 1986-09-30 | Texas Instruments Incorporated | Photovoltaic solar arrays using silicon microparticles |
| US4806495A (en) * | 1984-09-04 | 1989-02-21 | Texas Instruments Incorporated | Method of making solar array with aluminum foil matrix |
| US4691076A (en) * | 1984-09-04 | 1987-09-01 | Texas Instruments Incorporated | Solar array with aluminum foil matrix |
| US4917752A (en) * | 1984-09-04 | 1990-04-17 | Texas Instruments Incorporated | Method of forming contacts on semiconductor members |
| US4872607A (en) * | 1988-02-04 | 1989-10-10 | Texas Instruments Incorporated | Method of bonding semiconductor material to an aluminum foil |
| US5192400A (en) * | 1989-07-31 | 1993-03-09 | Texas Instruments Incorporated | Method of isolating shorted silicon spheres |
| US5415700A (en) * | 1993-12-10 | 1995-05-16 | State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Concrete solar cell |
-
1993
- 1993-12-10 US US08/166,307 patent/US5415700A/en not_active Expired - Fee Related
-
1994
- 1994-12-02 KR KR1019960703034A patent/KR960706694A/ko not_active Application Discontinuation
- 1994-12-02 NL NL9420039A patent/NL9420039A/nl not_active Application Discontinuation
- 1994-12-02 DE DE4499682T patent/DE4499682T1/de not_active Withdrawn
- 1994-12-02 WO PCT/US1994/013810 patent/WO1995016279A1/en active Application Filing
- 1994-12-02 CA CA002177493A patent/CA2177493A1/en not_active Abandoned
- 1994-12-02 JP JP7516236A patent/JPH09506472A/ja active Pending
- 1994-12-02 AU AU12987/95A patent/AU686716B2/en not_active Ceased
- 1994-12-09 TW TW083111467A patent/TW279272B/zh active
-
1995
- 1995-05-15 US US08/441,451 patent/US5672214A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW279272B (ko) | 1996-06-21 |
| AU1298795A (en) | 1995-06-27 |
| JPH09506472A (ja) | 1997-06-24 |
| DE4499682T1 (de) | 1996-11-14 |
| AU686716B2 (en) | 1998-02-12 |
| US5672214A (en) | 1997-09-30 |
| WO1995016279A1 (en) | 1995-06-15 |
| CA2177493A1 (en) | 1995-06-15 |
| NL9420039A (nl) | 1996-12-02 |
| US5415700A (en) | 1995-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960706694A (ko) | 콘크리트 태양 전지(Concrete solar cell) | |
| US3290175A (en) | Semiconductor photovoltaic devices | |
| US5990415A (en) | Multilayer solar cells with bypass diode protection | |
| JP2704570B2 (ja) | 半導体装置 | |
| US20150090324A1 (en) | Multi-junction solar cell devices | |
| CN107256893A (zh) | 太阳能电池 | |
| WO2014205003A1 (en) | Trench high electron mobility transistor | |
| US3110849A (en) | Tunnel diode device | |
| US20160190364A1 (en) | Seed layer for solar cell conductive contact | |
| JP2009539255A (ja) | 薄膜光起電構造および製造 | |
| US4301592A (en) | Method of fabricating semiconductor junction device employing separate metallization | |
| US8907359B2 (en) | Optoelectronic semiconductor component | |
| JPS6439082A (en) | Blue-light emitting display element | |
| EP0241226A2 (en) | Semiconductor device and method of making it | |
| TW200818527A (en) | Solar cell | |
| US2793332A (en) | Semiconductor rectifying connections and methods | |
| GB2397944A (en) | Thin film photovoltaic device and method of making the same | |
| US20100180927A1 (en) | Affixing method and solar decal device using a thin film photovoltaic and interconnect structures | |
| US4024569A (en) | Semiconductor ohmic contact | |
| US8153887B2 (en) | Method and structure for hydrogenation of silicon substrates with shaped covers | |
| US4544799A (en) | Window structure for passivating solar cells based on gallium arsenide | |
| JPH0424878B2 (ko) | ||
| CN100470866C (zh) | 一种半导体固态光源器件 | |
| CN101488538B (zh) | 具有导热基座的发光二极管装置 | |
| TW201201383A (en) | Solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |