TW279272B - - Google Patents

Info

Publication number
TW279272B
TW279272B TW083111467A TW83111467A TW279272B TW 279272 B TW279272 B TW 279272B TW 083111467 A TW083111467 A TW 083111467A TW 83111467 A TW83111467 A TW 83111467A TW 279272 B TW279272 B TW 279272B
Authority
TW
Taiwan
Application number
TW083111467A
Original Assignee
Univ Oregon State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Oregon State filed Critical Univ Oregon State
Application granted granted Critical
Publication of TW279272B publication Critical patent/TW279272B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
TW083111467A 1993-12-10 1994-12-09 TW279272B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/166,307 US5415700A (en) 1993-12-10 1993-12-10 Concrete solar cell

Publications (1)

Publication Number Publication Date
TW279272B true TW279272B (zh) 1996-06-21

Family

ID=22602703

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083111467A TW279272B (zh) 1993-12-10 1994-12-09

Country Status (9)

Country Link
US (2) US5415700A (zh)
JP (1) JPH09506472A (zh)
KR (1) KR960706694A (zh)
AU (1) AU686716B2 (zh)
CA (1) CA2177493A1 (zh)
DE (1) DE4499682T1 (zh)
NL (1) NL9420039A (zh)
TW (1) TW279272B (zh)
WO (1) WO1995016279A1 (zh)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415700A (en) * 1993-12-10 1995-05-16 State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Concrete solar cell
US5668050A (en) * 1994-04-28 1997-09-16 Canon Kabushiki Kaisha Solar cell manufacturing method
JP3772456B2 (ja) * 1997-04-23 2006-05-10 三菱電機株式会社 太陽電池及びその製造方法、半導体製造装置
US6013872A (en) * 1997-04-25 2000-01-11 Bayer Ag Directionally solidified, multicrystalline silicon, a process for the production thereof and its use, and solar cells containing this silicon and a process for the production thereof
DE19818343C1 (de) * 1998-04-24 2000-03-02 Johann A Kaiser Verfahren zum kathodischen Korrosionsschutz zur Sanierung von metallarmierten Betonflächen
CA2346294C (en) * 1998-10-09 2011-06-28 The Trustees Of Columbia University In The City Of New York Solid-state photoelectric device
AUPP931799A0 (en) * 1999-03-18 1999-04-15 Sustainable Technologies Australia Limited Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices
US6265322B1 (en) * 1999-09-21 2001-07-24 Agere Systems Guardian Corp. Selective growth process for group III-nitride-based semiconductors
US6437234B1 (en) * 2000-07-27 2002-08-20 Kyocera Corporation Photoelectric conversion device and manufacturing method thereof
DE10059498A1 (de) * 2000-11-30 2002-06-13 Infineon Technologies Ag Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats
JP2002368247A (ja) * 2001-06-01 2002-12-20 Canon Inc 太陽電池構造体、太陽電池アレイ及び太陽光発電システム
JP2004006702A (ja) * 2002-03-28 2004-01-08 Canon Inc 太陽電池モジュール設置構造体、太陽電池モジュールアレイ及び太陽光発電システム
AU2003268487A1 (en) * 2002-09-05 2004-03-29 Nanosys, Inc. Nanocomposites
US7078613B2 (en) * 2002-12-11 2006-07-18 General Electric Company Structured micro-channel semiconductor electrode for photovoltaic cells
US7402747B2 (en) * 2003-02-18 2008-07-22 Kyocera Corporation Photoelectric conversion device and method of manufacturing the device
CN1327534C (zh) * 2004-07-23 2007-07-18 南开大学 晶体颗粒太阳电池及其制备方法
DE102004046744B4 (de) * 2004-09-27 2007-05-24 Atotech Deutschland Gmbh Verfahren zur Übertragung von Pulvern und Pulverlacken auf Substrate und Verwendung zur Herstellung von Leiterplatten und Solarzellen
US7582161B2 (en) 2006-04-07 2009-09-01 Micron Technology, Inc. Atomic layer deposited titanium-doped indium oxide films
CN101132027B (zh) * 2007-09-27 2010-09-01 南开大学 用碎硅片制备的太阳电池及其制备方法
US8017859B2 (en) * 2007-10-17 2011-09-13 Spansion Llc Photovoltaic thin coating for collector generator
US20090306249A1 (en) * 2008-05-30 2009-12-10 Optechnology, Inc. Cementitious composites
DE102008040147A1 (de) * 2008-07-03 2010-01-28 Crystalsol Og Verfahren zur Herstellung einer Monokornmembran für eine Solarzelle sowie Monokornmembran nebst Solarzelle
US7897434B2 (en) * 2008-08-12 2011-03-01 International Business Machines Corporation Methods of fabricating solar cell chips
DE102008041457A1 (de) 2008-08-22 2010-02-25 Evonik Degussa Gmbh Neuartige photovoltaische Zellen aus Nano-Silizium
US20100200041A1 (en) * 2008-09-23 2010-08-12 David Dayton Dearborn Modular solar photovoltaic canopy system for development of rail vehicle traction power
WO2010139435A1 (de) * 2009-06-06 2010-12-09 Bayer Materialscience Ag Dachpfanne/dachstein/fassadenelement mit integriertem solarmodul
US20120052610A1 (en) * 2010-09-01 2012-03-01 Gabriel James Tambunga Total internal reflection energy/heat source
WO2013073045A1 (ja) 2011-11-18 2013-05-23 三洋電機株式会社 太陽電池及び太陽電池の製造方法
WO2014025826A2 (en) * 2012-08-06 2014-02-13 Dow Global Technologies Llc High reliability photo-voltaic device
TW201701516A (zh) * 2014-12-18 2017-01-01 沙克堤公司 用於具有高能量密度之固態能源元件的多重物理量設計
CN104617179B (zh) * 2015-01-21 2016-11-09 广东顺德中山大学卡内基梅隆大学国际联合研究院 一种光电传感器及其制备方法
DE102015108703A1 (de) * 2015-06-02 2016-12-08 Infineon Technologies Ag Verfahren zum Bilden einer Mehrzahl von Halbleiterbauelementen auf einer Mehrzahl von Halbleiterwafern
EP3205634A1 (en) * 2016-02-09 2017-08-16 Holcim Technology Ltd. Method of manufacturing a photovoltaic concrete
US10081944B1 (en) * 2017-09-21 2018-09-25 Newtonoid Technologies, L.L.C. Shingle clip system and method
US10733918B2 (en) 2018-04-05 2020-08-04 Newtonoid Technologies, L.L.C. Method of converting a static display to a changing display
CN111162133A (zh) * 2020-01-19 2020-05-15 成都晔凡科技有限公司 叠瓦组件、太阳能电池片和叠瓦组件的制造方法
EP4044425A1 (en) * 2021-02-15 2022-08-17 Research & Development Concretes SL Assembly comprising a base and a photovoltaic module and methods for manufacturing it
JP2023095724A (ja) * 2021-12-24 2023-07-06 恒己 小林 Ｎ型半導体とｐ型半導体を用いる工法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2904613A (en) * 1957-08-26 1959-09-15 Hoffman Electronics Corp Large area solar energy converter and method for making the same
US3038952A (en) * 1959-05-20 1962-06-12 Hoffman Electronics Corp Method of making a solar cell panel
NL6510095A (zh) * 1965-08-04 1967-02-06
NL6711002A (zh) * 1967-08-10 1969-02-12
US4021323A (en) * 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion
US4116207A (en) * 1977-07-12 1978-09-26 Solarex Corporation Solar panel with mat base member
DE3071116D1 (en) * 1979-06-26 1985-10-31 Ici Plc Cementitious product
EP0021681B1 (en) * 1979-06-29 1985-07-10 Imperial Chemical Industries Plc Hydraulic cement composition
EP0030408B1 (en) * 1979-12-03 1984-12-19 Imperial Chemical Industries Plc Hydraulic cement compositions
EP0038126B1 (en) * 1980-04-11 1984-08-22 Imperial Chemical Industries Plc Cementitious composition and cement product produced therefrom
DE3176693D1 (en) * 1980-12-22 1988-05-05 Ici Plc Cementitious composition and cementitious product of high flexural strength
US4521640A (en) * 1981-09-08 1985-06-04 Texas Instruments Incorporated Large area, low temperature process, fault tolerant solar energy converter
US4514580A (en) * 1983-12-02 1985-04-30 Sri International Particulate silicon photovoltaic device and method of making
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US4806495A (en) * 1984-09-04 1989-02-21 Texas Instruments Incorporated Method of making solar array with aluminum foil matrix
US4691076A (en) * 1984-09-04 1987-09-01 Texas Instruments Incorporated Solar array with aluminum foil matrix
US4917752A (en) * 1984-09-04 1990-04-17 Texas Instruments Incorporated Method of forming contacts on semiconductor members
US4872607A (en) * 1988-02-04 1989-10-10 Texas Instruments Incorporated Method of bonding semiconductor material to an aluminum foil
US5192400A (en) * 1989-07-31 1993-03-09 Texas Instruments Incorporated Method of isolating shorted silicon spheres
US5415700A (en) * 1993-12-10 1995-05-16 State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Concrete solar cell

Also Published As

Publication number Publication date
AU1298795A (en) 1995-06-27
JPH09506472A (ja) 1997-06-24
DE4499682T1 (de) 1996-11-14
AU686716B2 (en) 1998-02-12
US5672214A (en) 1997-09-30
KR960706694A (ko) 1996-12-09
WO1995016279A1 (en) 1995-06-15
CA2177493A1 (en) 1995-06-15
NL9420039A (nl) 1996-12-02
US5415700A (en) 1995-05-16

Similar Documents

Publication Publication Date Title
FR2702022B1 (zh)
FR2707024B1 (zh)
FR2712517B1 (zh)
TW279272B (zh)
FR2706747B1 (zh)
EP0779577A3 (zh)
FR2707058B1 (zh)
FR2706801B1 (zh)
FR2706803B1 (zh)
FR2706945B1 (zh)
FR2706827B1 (zh)
DK0611736T3 (zh)
FR2706865B1 (zh)
FR2706894B1 (zh)
FR2707067B1 (zh)
IN178572B (zh)
FR2716275B1 (zh)
FR2706940B1 (zh)
DK122793D0 (zh)
IN178079B (zh)
IN178060B (zh)
IN178007B (zh)
IN177849B (zh)
IN177808B (zh)
IN177795B (zh)