KR960043848A - Manufacturing method of optical path control device - Google Patents

Manufacturing method of optical path control device Download PDF

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Publication number
KR960043848A
KR960043848A KR1019950013356A KR19950013356A KR960043848A KR 960043848 A KR960043848 A KR 960043848A KR 1019950013356 A KR1019950013356 A KR 1019950013356A KR 19950013356 A KR19950013356 A KR 19950013356A KR 960043848 A KR960043848 A KR 960043848A
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KR
South Korea
Prior art keywords
membrane
forming
manufacturing
optical path
path control
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KR1019950013356A
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Korean (ko)
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KR0159414B1 (en
Inventor
김영일
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배순훈
대우전자 주식회사
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Priority to KR1019950013356A priority Critical patent/KR0159414B1/en
Publication of KR960043848A publication Critical patent/KR960043848A/en
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Publication of KR0159414B1 publication Critical patent/KR0159414B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09372—Pads and lands

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

본 발명은 광로 조절 장치의 제조방법에 관한 것으로서, 멤브레인을 형성한 후 멤브레인에 Z축 방향으로 그루브를 형성한다. 그리고, 멤브레인의 표면에 하부전극을 형성하고, 하부전극의 상부에 그루브를 채우도록 변형부를 형성하고, 상부전극 및 보호막을 순차적으로 형성한 후 각각의 식각 마스크를 사용하여 액츄에이터를 분리한다. 따라서, 멤브레인에 그루브를 형성하여 멤브레인을 다수개로 분리하여 멤브레인 내부의 압축응력을 최소화함으로써 액츄에이터의 휨을 방지할 수있다.The present invention relates to a method for manufacturing an optical path control device, wherein after forming a membrane, grooves are formed in the membrane in the Z-axis direction. Then, a lower electrode is formed on the surface of the membrane, a deformation portion is formed to fill a groove on the lower electrode, the upper electrode and the passivation layer are sequentially formed, and the actuators are separated using respective etching masks. Therefore, by forming grooves in the membrane to separate the membrane into a plurality of to minimize the compressive stress inside the membrane it is possible to prevent the bending of the actuator.

Description

광로 조절 장치의 제조방법Manufacturing method of optical path control device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도(A) 내지 (D)는 본 발명에 따른 광로 조절 장치의 제조 공정도.2 (A) to (D) is a manufacturing process diagram of the optical path control device according to the present invention.

Claims (9)

트랜지스터들을 매트릭스 상태로 내장하고, 표면에 상기 트랜지스터들과 전기적으로 연결된 패드(53)들을갖는 구동기판(51)의 상부의 소정 부분에 상기 패드(53)가 노출되게 희생막(55)을 형성하는 공정과, 상기 구동기판(51)의노출된 부분과 상기 희생막(55)의 상부에 멤브레인(57)을 형성하는 공정과, 상기 멤브레인(57)의 소정 부분을 상기 패드(53)가 노출되도록 제거하여 개구(58)를 형성하고, 그 개구(58)내에 플러그(59)를 형성하는 공정과, 상기 멤브레인(57)에Z축 방향으로 띠모양의 그루브(60)를 형성하여 상기 멤브레인(57)을 분리하는 공정과, 상기 멤브레인(57) 상부와 상기 그루브(60)의 내부표면에 상기 플러그(59)와 전기적으로 접촉되도록 하부전극(61)을 형성하는 공정과, 상기 하부전극(61)의상부에 상기 그루브(60)를 채우도록 변형부(63)를 형성하는 공정과, 상기 변형부(63)의 상부에 반사막으로도 사용되는 상부전극(65)을 형성하는 공정과, 상기 상부전극(65), 변형부(63), 하부전극(61) 및 멤브레인(57)을 각각의 식각마스크로상기 구동기판(51)이 노출되도록 하여 이웃하는 액츄에이터들과 분리하는 공정과, 상기 액츄에이터(80)의 하부에 형성된희생막(55)을 제거하는 공정을 구비하는 광로 조절 장치의 제조방법.The sacrificial layer 55 is formed to embed the transistors in a matrix state and to expose the pads 53 at a predetermined portion of an upper portion of the driving substrate 51 having pads 53 electrically connected to the transistors on a surface thereof. Forming a membrane 57 on the exposed portion of the driving substrate 51 and the sacrificial layer 55, and exposing the pad 53 to a predetermined portion of the membrane 57. Removing to form an opening 58, and forming a plug 59 in the opening 58, and forming a band-shaped groove 60 in the Z-axis direction in the membrane 57 to form the membrane 57 ), Forming a lower electrode 61 on the membrane 57 and an inner surface of the groove 60 to be in electrical contact with the plug 59, and the lower electrode 61. Forming the deformation portion 63 to fill the groove 60 in the clothing portion And forming an upper electrode 65, which is also used as a reflective film, on the upper part of the deformable part 63, and the upper electrode 65, the deformable part 63, the lower electrode 61, and the membrane 57. Each of the etching masks to expose the driving substrate 51 so as to be exposed to neighboring actuators, and to remove the sacrificial film 55 formed under the actuator 80. Manufacturing method. 제1항에 있어서, 상기 멤브레인(57)을 질화실리콘 또는 탄화실리콘의 규화물로 형성하는 광로 조절 장치의제조방법.The method of manufacturing an optical path control apparatus according to claim 1, wherein said membrane (57) is formed of a silicon nitride or a silicide of silicon carbide. 제2항에 있어서, 상기 멤브레인(57)을 화학기상침적법으로 형성하는 광로 조절 장치의 제조방법.The method of claim 2, wherein the membrane (57) is formed by chemical vapor deposition. 제1항에 있어서, 상기 그루브(60)를 한 개 이상의 다수 개 형성하는 광로 조절 장치의 제조방법.The method according to claim 1, wherein one or more grooves (60) are formed. 제4항에 있어서, 상기 그루브(60)를 상기 희생막(55)이 노출되게 형성하는 광로 조절 장치의 제조방법.The method of claim 4, wherein the groove is formed to expose the sacrificial layer. 제1항에 있어서, 상기 변형부(63)를 BaTiO3, PZT 또는 PLZT의 압전세라믹으로 형성하는 광로 조절 장치의제조방법.The method of manufacturing an optical path control apparatus according to claim 1, wherein the deformable portion (63) is formed of a piezoelectric ceramic of BaTiO3, PZT or PLZT. 제1항에 있어서, 상기 변형부(63)를 PMN의 전왜세라믹으로 형성하는 광로 조절 장치의 제조방법.The method of manufacturing an optical path control device according to claim 1, wherein the deformable portion (63) is formed of an electrostrictive ceramic of PMN. 제1항에 있어서, 상기 상부전극(65)의 상부 및 액츄에이터들의 분리에 의한 측면들에 보호막(67)을 형성하는 공정을 더 구비하는 광로 조절 장치의 제조방법.The method according to claim 1, further comprising forming a protective film (67) on the upper side of the upper electrode (65) and on side surfaces of the actuator by separation of actuators. 제8항에 있어서, 상기 희생막(55)을 제거한 후 상기 보호막(67)을 제거하는 공정을 더 구비하는 광로 조절장치의 제조방법.The method of manufacturing an optical path control apparatus according to claim 8, further comprising the step of removing the protective film (67) after removing the sacrificial film (55). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950013356A 1995-05-26 1995-05-26 Method for fabricating optical projection system KR0159414B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950013356A KR0159414B1 (en) 1995-05-26 1995-05-26 Method for fabricating optical projection system

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Application Number Priority Date Filing Date Title
KR1019950013356A KR0159414B1 (en) 1995-05-26 1995-05-26 Method for fabricating optical projection system

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KR960043848A true KR960043848A (en) 1996-12-23
KR0159414B1 KR0159414B1 (en) 1999-01-15

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KR1019950013356A KR0159414B1 (en) 1995-05-26 1995-05-26 Method for fabricating optical projection system

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