KR960039932A - Manufacturing method of optical path control device - Google Patents

Manufacturing method of optical path control device Download PDF

Info

Publication number
KR960039932A
KR960039932A KR1019950009391A KR19950009391A KR960039932A KR 960039932 A KR960039932 A KR 960039932A KR 1019950009391 A KR1019950009391 A KR 1019950009391A KR 19950009391 A KR19950009391 A KR 19950009391A KR 960039932 A KR960039932 A KR 960039932A
Authority
KR
South Korea
Prior art keywords
membrane
optical path
path control
manufacturing
control device
Prior art date
Application number
KR1019950009391A
Other languages
Korean (ko)
Other versions
KR0154958B1 (en
Inventor
김준모
Original Assignee
배순훈
대우전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 배순훈, 대우전자 주식회사 filed Critical 배순훈
Priority to KR1019950009391A priority Critical patent/KR0154958B1/en
Publication of KR960039932A publication Critical patent/KR960039932A/en
Application granted granted Critical
Publication of KR0154958B1 publication Critical patent/KR0154958B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/023—Catoptric systems, e.g. image erecting and reversing system for extending or folding an optical path, e.g. delay lines
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

본 발명은 광로조절장치의 제조방법에 관한 것으로서, 구동 기판의 표면에 다결정실리콘으로 지지부를 형성하고 패드가 형성된 부분을 제외한 지지부의 소정 부분을 산화시켜 희생막을 형성한 후 지지부 보다 두껍게 부분의 희생막을 제거하여 평탄화하고, 멤브레인, 하부전극, 변형부 및 상부전극을 형탄하게 형성하고 액츄에이터들을 분리한 후 희생막을 식각 용액으로 제거하여 버즈 비크에 의해 공간과 멤브레인이 완만하게 접하는 에어 갭을 한정한다. 따라서, 버즈 비크에 의해 공간과 멤브레인이 급격히 접하지 않도록 하여 별도의 고온의 리플로우를 수행하지 않고 멤브레인의 특정 부분에 응력이 집중되는 것을 방지 할 수 있으며, 또한, 평탄도를 향상시켜 포토레지스트층을 균일한 두께로 도포할 수 있으므로 균일하게 노광하여 원하는 식각 마스크를 형성 할 수 있어 액츄에이터들의 분리를 용이하게 할 수 있다.The present invention relates to a method for manufacturing an optical path control apparatus, wherein a support part is formed on a surface of a driving substrate by polycrystalline silicon, and a predetermined portion of the support part is formed by oxidizing a predetermined part of the support part except for the pad-formed part to form a sacrificial film, and then the sacrificial film is formed thicker than the support part. By removing and planarizing, forming the membrane, the lower electrode, the deformable portion and the upper electrode in a sharp manner, separating the actuators, and then removing the sacrificial film with an etching solution to define an air gap in which the space and the membrane are gently contacted by the buzz beak. Therefore, it is possible to prevent the concentration of stress on a specific portion of the membrane without performing a separate high temperature reflow by preventing the space and the membrane from contacting rapidly by the buzz beak, and also improves the flatness of the photoresist layer Since it can be applied in a uniform thickness it can be uniformly exposed to form a desired etching mask can facilitate the separation of the actuators.

Description

광로조절장치의 제조방법Manufacturing method of optical path control device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도(A) 내지 (D)는 본 발명의 실시예에 따른 광로조절장치의 제조공정도.2 (A) to (D) is a manufacturing process diagram of the optical path control device according to an embodiment of the present invention.

Claims (18)

트랜지스터들을 매트릭스 상태로 내장하고 표면에 상기 트랜지스터들과 전기적으로 연결된 패드들을 갖는 구동기판의 상부에 지지부를 형성하는 공정과, 상기 패드들 주위의 소정 부분을 제외한 상기 지지부를 상기 구동 기판과 접촉되도록 산화시켜 희생막을 형성하고 평탄화하는 공정과, 상기 지지부와 상기 희생막의 상부에 멤브레인을 형성하는 공정과, 상기 멤브레인과 상기 지지부의 소정 부분을 상기 패드가 노출되도록 제거하고 플러그를 형성하는 공정과, 상기 멤브레인 상부에 플러그와 전기적으로 연결되도록 하부전극을 형성하는 공정과, 상기 하부전극의 상부에 변형부와 상부전극을 순차적으로 형성하는 공정과, 상기 상부전극부터 상기 멤브레인까지 소정 부분을 상기 희생막이 노출되도록 제거하여 액츄에이터들을 분리하고 상기 희생막을 제거하는 공정을 구비하는 광로조절장치의 제조방법.Embedding the transistors in a matrix state and forming a support on an upper surface of the driving substrate having pads electrically connected to the transistors on a surface thereof, and oxidizing the support except for a predetermined portion around the pads so as to contact the driving substrate. Forming and planarizing the sacrificial layer, forming a membrane on the support and the sacrificial layer, removing a predetermined portion of the membrane and the support such that the pad is exposed, and forming a plug; Forming a lower electrode such that the lower electrode is electrically connected to the plug at an upper portion, forming a deformable portion and an upper electrode sequentially on the lower electrode, and exposing the sacrificial layer to a predetermined portion from the upper electrode to the membrane; Remove the actuator to remove the actuator The method of the optical path control device comprising a step of removing the film. 제1항에 있어서, 상기 지지부를 다결정실리콘을 화학기상침적법으로 형성하는 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 1, wherein the support portion is formed of polycrystalline silicon by chemical vapor deposition. 제2항에 있어서, 상기 지지부를 1∼2㎛ 두께로 형성하는 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 2, wherein the support part is formed to a thickness of 1 to 2 mu m. 제1항에 있어서, 상기 희생막을 로코스(LOCOS) 방법으로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the sacrificial layer is formed by a LOCOS method. 제1항에 있어서, 상기 멤브레인을 질화실리콘 또는 탄화실리콘의 규화물로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the membrane is formed of a silicon nitride or a silicide of silicon carbide. 제1항에 있어서, 상기 하부전극을 백금 또는 백금/티타늄을 500∼2000A의 두께로 증착하여 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the lower electrode is formed by depositing platinum or platinum / titanium to a thickness of 500 to 2000 A. 제1항에 있어서, 상기 변형부를 BaTiO3, PZT 또는 PLZT의 압전세라믹으로 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the deforming part is formed of a piezoelectric ceramic of BaTiO 3 , PZT or PLZT. 제1항에 있어서, 상기 변형부를 PMN의 전왜 세라믹으로 형성하는 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 1, wherein the deformable part is formed of an electrostricted ceramic of PMN. 제7항 또는 제8항에 있어서, 상기 변형부를 Sol-Gel법, 스퍼터링 또는 화학기상침적법으로 형성하는 광로조절장치의 제작방법.The manufacturing method of the optical path control apparatus of Claim 7 or 8 which forms the said deformation part by the Sol-Gel method, sputtering, or chemical vapor deposition method. 제9항에 있어서 상기 변형부를 1∼2㎛의 두께로 형성하는 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 9, wherein the deformation part is formed to a thickness of 1 to 2 mu m. 제1항에 있어서, 상기 상부전극을 전기 전도도 및 반사 특성이 양호한 알루미늄으로 스퍼터링 또는 진공 증착하여 형성하는 광로조절장치의 제조방법.The method of claim 1, wherein the upper electrode is formed by sputtering or vacuum deposition of aluminum having good electrical conductivity and reflective properties. 제11항에 있어서, 상기 상부전극을 500∼1000Å의 두께로 형성하는 광로조절장치의 제조방법.12. The method of claim 11, wherein the upper electrode is formed to a thickness of 500 to 1000 mW. 제1항에 있어서, 상기 상부전극부터 멤브레인까지 소정 부분을 식각하여 액츄에이터들을 분리하는 광로조절장치의 제조방법.The method of claim 1, wherein the actuators are separated by etching a predetermined portion from the upper electrode to the membrane. 제13항에 있어서, 상기 상부전극부터 멤브레인까지 각 층 마다 각각의 식각 마스크를 이용하여 순차적으로 식각하는 광로조절장치의 제조방법.The method of claim 13, wherein each layer is etched sequentially using each etching mask from the upper electrode to the membrane. 제1항에 있어서, 상기 상부전극의 상부와 액츄에이터들의 분리에 의한 측면들에 보호막을 형성하는 공정을 더 구비하는 광로조절장치의 제조방법.The method of claim 1, further comprising forming a passivation layer on the upper side of the upper electrode and side surfaces of the actuator by separating the actuators. 제15항에 있어서, 상기 보호막을 산환실리콘으로 형성하는 광로조절장치의 제조방법.The method of manufacturing an optical path control device according to claim 15, wherein the protective film is formed of oxidized silicon. 제15항에 있어서, 상기 보호막을 포토레지스트를 포함하는 폴리머 또는 질화실리콘으로 형성하는 광로조절장치의 제조방법.The method of claim 15, wherein the protective film is formed of a polymer or silicon nitride including a photoresist. 제17항에 있어서, 상기 희생막을 제거한 후 보호막을 제거하는 공정을 더 구비한 광로조절장치의 제조방법.18. The method of claim 17, further comprising removing the protective film after removing the sacrificial film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950009391A 1995-04-21 1995-04-21 Method for manufacturing optical path control apparatus KR0154958B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950009391A KR0154958B1 (en) 1995-04-21 1995-04-21 Method for manufacturing optical path control apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950009391A KR0154958B1 (en) 1995-04-21 1995-04-21 Method for manufacturing optical path control apparatus

Publications (2)

Publication Number Publication Date
KR960039932A true KR960039932A (en) 1996-11-25
KR0154958B1 KR0154958B1 (en) 1998-11-16

Family

ID=19412628

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950009391A KR0154958B1 (en) 1995-04-21 1995-04-21 Method for manufacturing optical path control apparatus

Country Status (1)

Country Link
KR (1) KR0154958B1 (en)

Also Published As

Publication number Publication date
KR0154958B1 (en) 1998-11-16

Similar Documents

Publication Publication Date Title
KR950029795A (en) Optical path control device and manufacturing method
KR960039932A (en) Manufacturing method of optical path control device
KR950029794A (en) Optical path control device and manufacturing method
KR960001812A (en) Manufacturing method of optical path control device
KR960039934A (en) Manufacturing method of optical path control device
KR960043852A (en) Manufacturing method of optical path control device
KR960043848A (en) Manufacturing method of optical path control device
KR960039451A (en) Manufacturing method of optical path control device
JP2000091663A (en) Method for working silicon micro-device
KR0171142B1 (en) Contact hole wiring method of optical path control device
KR100207402B1 (en) Fabrication method for lightpath modulation device
KR970009332A (en) Manufacturing method of optical path control device
KR960043844A (en) Manufacturing method of optical path control device
KR960039759A (en) Manufacturing method of optical path control device
KR100207381B1 (en) Method for electrically conducting a contact hole of optical projection system
KR960039933A (en) Manufacturing method of optical path control device
KR0174456B1 (en) Method for patterning and optical projection system
KR100196833B1 (en) Contact hole fabrication method for optical projection system
KR960016589A (en) Manufacturing method of optical path control device
KR100267465B1 (en) Fabrication method of flexible layer of the optiucal projection system
KR100207407B1 (en) Fabrication method for lightpath modulation device
KR0177229B1 (en) Method for patterning a sacrificial layer of the projection system
KR960043845A (en) Manufacturing method of optical path control device
KR970067568A (en) Manufacturing method of actuator for optical path control device
KR950016307A (en) Manufacturing method of optical path control device

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20020628

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee