KR960032691A - 압력접촉 하우징 및 파워 반도체부품 - Google Patents
압력접촉 하우징 및 파워 반도체부품 Download PDFInfo
- Publication number
- KR960032691A KR960032691A KR1019950061546A KR19950061546A KR960032691A KR 960032691 A KR960032691 A KR 960032691A KR 1019950061546 A KR1019950061546 A KR 1019950061546A KR 19950061546 A KR19950061546 A KR 19950061546A KR 960032691 A KR960032691 A KR 960032691A
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- pressure contact
- contact housing
- power semiconductor
- housing
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Thyristors (AREA)
Abstract
반도체부품용 압력접촉 하우징에 있어서, 게이트전극 접촉링(4)이 나선형 리세스(5)를 갖는다. 상기 나선형 리세스는 하우징의 조립중에 일어나는 축방향 움직임을, 부재에 하중을 가하지 않고서 흡수할 수가 있다. 따라서, 게이트전극과 게이트 전극 접촉링 간에 양호한, 내구성을 갖는 전지접점이 이루어진다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 게이트전극 접촉링의 평면도.
Claims (4)
- 제1 및 제2주전극과 게이트전극을 가지며, 그 제1 및 제2주전극은 두 개의접촉플런저(3)사이에 배열되어 이 플런저에 의해 압력을 받고, 게이트전극은 하우징 밖으로 통하는 게이트전극 접촉링(4)에 접속되는 반도체부품용 압력접촉 하우징(1)에 있어서, 게이트전극 접촉링(4)이 나선형 리세스(5)를 갖는 것을 특징으로 하는 압력접촉 하우징.
- 제1항에 있어서, 상기 리세스(5)의 가장자리가 인벌류우트 서클을 따라 진행하는 것을 특징으로 하는 압력접촉 하우징.
- 제2항에 있어서, 상기 리세스의 가장자리의 인벌류우트가 원호에 근접하는 것을 특징으로 하는 압력접촉 하우징.
- 파워 반도체부품에 있어서, 제1항 내지 제3항 중 어느 한 항에 따른 하우징을 포함하는 것을 특징으로 하는 파워 반도체부품.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19505387A DE19505387A1 (de) | 1995-02-17 | 1995-02-17 | Druckkontaktgehäuse für Halbleiterbauelemente |
DE19505387.7 | 1995-02-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960032691A true KR960032691A (ko) | 1996-09-17 |
Family
ID=7754241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950061546A KR960032691A (ko) | 1995-02-17 | 1995-12-28 | 압력접촉 하우징 및 파워 반도체부품 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5739556A (ko) |
EP (1) | EP0729179B1 (ko) |
JP (1) | JPH08241956A (ko) |
KR (1) | KR960032691A (ko) |
CN (1) | CN1073286C (ko) |
DE (2) | DE19505387A1 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19711965C2 (de) * | 1997-03-21 | 1999-01-14 | Siemens Ag | Vorrichtung zur niederinduktiven Anbindung eines abschaltbaren Thyristors an seine Ansteuereinrichtung |
JP3344552B2 (ja) * | 1997-09-17 | 2002-11-11 | 株式会社東芝 | 圧接型半導体装置 |
US6081039A (en) * | 1997-12-05 | 2000-06-27 | International Rectifier Corporation | Pressure assembled motor cube |
JP3480901B2 (ja) * | 1998-06-18 | 2003-12-22 | 株式会社東芝 | 圧接形半導体素子および電力変換装置 |
JP4129082B2 (ja) * | 1998-07-30 | 2008-07-30 | 三菱電機株式会社 | 圧接型半導体装置及びそのリング状ゲート端子並びに電力応用装置 |
US6423988B1 (en) | 1998-09-10 | 2002-07-23 | Mitsubishi Denki Kabushiki Kaisha | Pressure-contact semiconductor device |
US6445013B1 (en) * | 2000-04-13 | 2002-09-03 | Mitsubishi Denki Kabushiki Kaisha | Gate commutated turn-off semiconductor device |
US7132698B2 (en) * | 2002-01-25 | 2006-11-07 | International Rectifier Corporation | Compression assembled electronic package having a plastic molded insulation ring |
WO2013038493A1 (ja) * | 2011-09-13 | 2013-03-21 | トヨタ自動車株式会社 | 半導体モジュール |
WO2014184061A1 (en) * | 2013-05-13 | 2014-11-20 | Abb Technology Ag | Spacer system for a semiconductor switching device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL270438A (ko) * | 1960-11-02 | 1900-01-01 | ||
GB1465328A (en) * | 1973-06-19 | 1977-02-23 | Westinghouse Electric Corp | Compression bond assembly for a planar semiconductor device |
US4238761A (en) * | 1975-05-27 | 1980-12-09 | Westinghouse Electric Corp. | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
US4092703A (en) * | 1977-03-15 | 1978-05-30 | Kabushiki Kaisha Meidensha | Gate controlled semiconductor device |
DE3118365A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden |
US4529999A (en) * | 1982-07-09 | 1985-07-16 | Motorola, Inc. | Gate controlled switch |
JPS60194565A (ja) * | 1984-03-15 | 1985-10-03 | Mitsubishi Electric Corp | 半導体装置 |
JPS61113249A (ja) * | 1984-11-08 | 1986-05-31 | Mitsubishi Electric Corp | 半導体装置 |
DE3880730D1 (de) * | 1987-03-25 | 1993-06-09 | Bbc Brown Boveri & Cie | Halbleiterbauelement mit einer steuerelektrode. |
JPH0760893B2 (ja) * | 1989-11-06 | 1995-06-28 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
DE4227063A1 (de) * | 1992-08-15 | 1994-02-17 | Abb Research Ltd | Abschaltbares Hochleistungs-Halbleiterbauelement |
-
1995
- 1995-02-17 DE DE19505387A patent/DE19505387A1/de not_active Withdrawn
- 1995-12-28 KR KR1019950061546A patent/KR960032691A/ko not_active Application Discontinuation
-
1996
- 1996-02-01 US US08/595,501 patent/US5739556A/en not_active Expired - Fee Related
- 1996-02-02 DE DE59605529T patent/DE59605529D1/de not_active Expired - Fee Related
- 1996-02-02 EP EP96810070A patent/EP0729179B1/de not_active Expired - Lifetime
- 1996-02-07 JP JP8020953A patent/JPH08241956A/ja active Pending
- 1996-02-16 CN CN96101286A patent/CN1073286C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0729179B1 (de) | 2000-07-05 |
DE59605529D1 (de) | 2000-08-10 |
CN1136221A (zh) | 1996-11-20 |
EP0729179A1 (de) | 1996-08-28 |
CN1073286C (zh) | 2001-10-17 |
DE19505387A1 (de) | 1996-08-22 |
JPH08241956A (ja) | 1996-09-17 |
US5739556A (en) | 1998-04-14 |
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N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |