KR960032566A - Method of forming planarization insulating film - Google Patents

Method of forming planarization insulating film Download PDF

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Publication number
KR960032566A
KR960032566A KR1019950003730A KR19950003730A KR960032566A KR 960032566 A KR960032566 A KR 960032566A KR 1019950003730 A KR1019950003730 A KR 1019950003730A KR 19950003730 A KR19950003730 A KR 19950003730A KR 960032566 A KR960032566 A KR 960032566A
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KR
South Korea
Prior art keywords
forming
ozone
oxide film
teos oxide
insulating film
Prior art date
Application number
KR1019950003730A
Other languages
Korean (ko)
Inventor
이승무
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950003730A priority Critical patent/KR960032566A/en
Publication of KR960032566A publication Critical patent/KR960032566A/en

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 금속배선간 절연막 형성시 보이드 발생을 억제하기 위한 평탄화 절연막 형성방법에 관한 것으로, 1차 오존-TEOS 산화막을 형성한 후 전면 스퍼터 식각하는 단계; 2차 오존-TEOS 산화막을 형성하되 원하는 두께의 일부를 형성한 후 증착온도 및 오존의 농도를 달리하여 나머지 두께를 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.The present invention relates to a method of forming a planarization insulating film for suppressing the generation of voids when forming an insulating film between metal wirings, comprising: forming a primary ozone-TEOS oxide film and then etching the entire surface by sputter etching; Forming a secondary ozone-TEOS oxide film, but after forming a portion of the desired thickness, characterized in that it comprises the step of forming the remaining thickness by varying the deposition temperature and the concentration of ozone.

Description

평탄화 절연막 형성방법Method of forming planarization insulating film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2E도는 본 발명의 일실시예에 따른 평탄화 절연막 형성 과정을 나타내는 공정 단면도.2A through 2E are cross-sectional views illustrating a process of forming a planarization insulating film according to an embodiment of the present invention.

Claims (3)

반도체 소자 제조공정중 단차발생부위를 오존-TEOS 산화막을 형성하여 평탄화하는 공정에 있어서, 1차 오존-TEOS 산화막을 형성한 후 전면 스퍼터 식각하는 단계; 2차 오존-TEOS 산화막을 형성하되 원하는 두께의 일부를 형성한 후 증착온도 및 오존의 농도를 달리하여 나머지 두께를 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 평탄화 절연막 형성방법.A process of forming an ozone-TEOS oxide film to planarize a stepped portion of a semiconductor device manufacturing process, the method comprising: etching a front sputter after forming a primary ozone-TEOS oxide film; Forming a secondary ozone-TEOS oxide film, but forming a portion of the desired thickness, and then forming the remaining thickness by varying the deposition temperature and the concentration of ozone. 제1항에 있어서, 상기 1차 오존-TEOS 산화막은 380 내지 420℃의 온도하에서 오존농도 4.5 내지 5.0몰%의 증착 조건하에서 형성되는 것을 특징으로 하는 평탄화 절연막 형성방법.The method of claim 1, wherein the primary ozone-TEOS oxide film is formed under a deposition condition of an ozone concentration of 4.5 to 5.0 mol% at a temperature of 380 to 420 ° C. 제2항에 있어서, 상기 2차 오존-TEOS 산화막은 420 내지 450℃의 온도하에서 오존농도 5.0 내지 6.0몰%의 증착 조건하에서 형성되는 것을 특징으로 하는 평탄화 절연막 형성방법.The method of claim 2, wherein the secondary ozone-TEOS oxide film is formed under a deposition condition of an ozone concentration of 5.0 to 6.0 mol% at a temperature of 420 to 450 ° C. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950003730A 1995-02-24 1995-02-24 Method of forming planarization insulating film KR960032566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950003730A KR960032566A (en) 1995-02-24 1995-02-24 Method of forming planarization insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950003730A KR960032566A (en) 1995-02-24 1995-02-24 Method of forming planarization insulating film

Publications (1)

Publication Number Publication Date
KR960032566A true KR960032566A (en) 1996-09-17

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Family Applications (1)

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KR1019950003730A KR960032566A (en) 1995-02-24 1995-02-24 Method of forming planarization insulating film

Country Status (1)

Country Link
KR (1) KR960032566A (en)

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