KR960026354A - Method of planarizing interlayer insulating layer and forming diffusion barrier layer of semiconductor device - Google Patents
Method of planarizing interlayer insulating layer and forming diffusion barrier layer of semiconductor device Download PDFInfo
- Publication number
- KR960026354A KR960026354A KR1019940035443A KR19940035443A KR960026354A KR 960026354 A KR960026354 A KR 960026354A KR 1019940035443 A KR1019940035443 A KR 1019940035443A KR 19940035443 A KR19940035443 A KR 19940035443A KR 960026354 A KR960026354 A KR 960026354A
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- KR
- South Korea
- Prior art keywords
- diffusion barrier
- insulating layer
- barrier layer
- layer
- forming
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자 제조공정 중 절연층 형성방법에 관한 것으로, 특히 층간절연층의 평탄화 및 불순물의 확산을 방지하기 위한 반도체 소자의 층간절연층 평탄화 및 확산방지층 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an insulating layer during a semiconductor device manufacturing process, and more particularly, to a method for planarizing an interlayer insulating layer and forming a diffusion barrier layer of a semiconductor device to prevent planarization of an interlayer insulating layer and diffusion of impurities.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도는 본 발명에 따른 층간절연층 평탄화 후의 단면도, 제1B도는 본 발명에 따른 불순물 확산 방지 산화층 형성 후의 단면도.1A is a sectional view after planarization of an interlayer insulating layer according to the present invention, and FIG. 1B is a sectional view after formation of an impurity diffusion preventing oxide layer according to the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035443A KR960026354A (en) | 1994-12-20 | 1994-12-20 | Method of planarizing interlayer insulating layer and forming diffusion barrier layer of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035443A KR960026354A (en) | 1994-12-20 | 1994-12-20 | Method of planarizing interlayer insulating layer and forming diffusion barrier layer of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR960026354A true KR960026354A (en) | 1996-07-22 |
Family
ID=66688369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940035443A KR960026354A (en) | 1994-12-20 | 1994-12-20 | Method of planarizing interlayer insulating layer and forming diffusion barrier layer of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR960026354A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000076857A (en) * | 1999-03-18 | 2000-12-26 | 니시무로 타이죠 | Semiconductor device and method of making thereof |
-
1994
- 1994-12-20 KR KR1019940035443A patent/KR960026354A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000076857A (en) * | 1999-03-18 | 2000-12-26 | 니시무로 타이죠 | Semiconductor device and method of making thereof |
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