KR960018622A - 미소기계 장치의 개선된 빔 - Google Patents

미소기계 장치의 개선된 빔 Download PDF

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KR960018622A
KR960018622A KR1019950040973A KR19950040973A KR960018622A KR 960018622 A KR960018622 A KR 960018622A KR 1019950040973 A KR1019950040973 A KR 1019950040973A KR 19950040973 A KR19950040973 A KR 19950040973A KR 960018622 A KR960018622 A KR 960018622A
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aluminum
deformable beam
improved
improved deformable
compound
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KR100412003B1 (ko
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에이치. 트레질가스 죤
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윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

전기적으로 어드레스, 집적, 모노리딕가능한 미소미러 장치(10)는 각종 금속 및 산화물 층, 포트레지스트, 액체 및 플라즈마 애칭, 플라즈마 스트리핑을 포함하여 스퍼터링 기술과 관련된 기술과 물질을 이용하여 형성된다. 장치(10)는 스퍼터링과 선택적 에칭에 의해 형성된 하나 또는 그 이상의 빔(18)에 의해 지지되어지는 선택적, 전기적으로 편향가능한 질량체 또는 미러(12)를 포함한다. 빔(18)은 전기 전도성의 금속간 알루미늄 화합물, 또는 둘 또는 그 이상의 이러한 화합물의 혼합물로 구성됨으로써 개선된다. 개선된 빔(18)을 구성하는 물질은 비교적 고융점을 가지며, FCC 결정 구조보다 적은 1차 슬립 시스템을 나타내며, 알루미늄 및 알루미늄 합금을 에칭하는데 사용된 것과 동일한 또는 유사한 에칭제 및 공정에 의해 에칭가능하며, 알루미늄 또는 알루미늄 합금보다 강하며 덜 이완된다. 따라서, 개선된 빔(18)은 변형되지 않는 다른 장치를 제조하는데 사용된 정형적인 공정 단계에서 상당한 또는 근본적인 변형을 하지 않고도 증가된 강도와 감소된 이완을 나타낸다.

Description

미소기계 장치의 개선된 빔
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 원리에 따라 구성 및 제조되어진 변형가능한 비틀림 빔에 의해 지지되어지는 가동 또는 편향가능한 질량체 또는 미러를 도시하는 DMD SLM형 미소기계 장치 어레이의 일부에 대한 평면도.
제2도는 제1도의 라인 2-2을 따라 절취한 단일 DMD 일부에 대한 측단면도.
제3도는 제2도에서 도시되고 제1도의 라인 3-3을 따라 절취된 DMD 일부에 대한 측단면도.

Claims (31)

  1. 변형가능한 빔에 의해 지지되어지는 편향가능한 질량체를 포함하며, 상기 빔은 상기 질량체의 편향에 의해 변형되어지는 형의 미소기계 장치의 개선된 변형가능 빔에 있어서, 상기 빔은 비교적 고융점을 가지며 FCC 경정 구조보다 적은 1차 슬립 시스템을 나타내는 하나 또는 그 이상의 전기 전도성 알루미늄 화합물로 구성되는 것을 특징으로 하는 개선된 변형가능 빔.
  2. 변형가능한 빔에 의해 지지되어지는 편향가능한 질량체를 포함하며, 상기 빔은 상기 질량체의 편향에 의해 변형되어지는 형의 미소기계 장치의 개선된 변형가능 빔에 있어서, 상기 빔은 하나 또는 그 이상의 전기전도성 알루미늄 금속간 화합물로 구성되는 것을 특징으로 하는 변형가능 빔.
  3. 제2항에 있어서, 상기 화합물은 비교적 고융점을 가지며 FCC 결정 구조보다 적은 1차 슬립 시스템을 나타내는 것을 특징으로 하는 개선된 변현가능 빔.
  4. 제3항에 있어서, 상기 미소기계 장치는 SLM이며, 상기 질량체는 미러인 것을 특징으로 하는 개선된 변형가능 빔.
  5. 제4항에 있어서, 상기 알루미늄 화합물은 일반식 AlxQy을 가지며, 여기서 Q는 산소가 아닌 것을 특징으로 하는 개선된 변형가능 빔.
  6. 제5항에 있어서, 상기 Q는 철, 니오븀, 니켈, 탄탈, 지르코늄, 몰리브덴, 텅스텐, 비소, 리튬, 질소, 인, 안티몬 및 티타늄으로 이루어진 그룹에서 선택되는 것을 특징으로 하는 개선된 변형가능 빔.
  7. 제6항에 있어서, 상기 빔은 상기 화합물의 혼합물로 구성되는 것을 특징으로 하는 개선된 변형가능 빔.
  8. 제7항에 있어서, 상기 혼합물은 AlTi 및 Al3Ti인 것을 특징으로 하는 개선된 변형가능 빔.
  9. 제5항에 있어서, 상기 Q는 안티몬, 비소, 인 및 질소로 이루어진 그룹에서 선택되는 것을 특징으로 하는 개선된 변형가능 빔.
  10. 제4항에 있어서, 상기 알루미늄 화합물은 일반식 AlxQy를 가지며, 여기서 Q는 금속 원소, 회토류 원소, 비금속 고체 원소 및 비금속 기체 원소로 이루어진 그룹에서 선택되는 것을 특징으로 하는 개선된 변형가능 빔.
  11. 제10항에 있어서, 상기 Q는 철, 니오븀, 니켈, 탄탈, 지르코늄, 몰리브덴, 텅스텐, 리튬, 및 티타늄으로 이루어진 그룹에서 선택되는 것을 특징으로 하는 개선된 변형가능 빔.
  12. 제10항에 있어서, 상기 Q는 안티몬, 비소, 및 질소로 이루어진 그룹에서 선택되는 것을 특징으로 하는 개선된 변형가능 빔.
  13. 제10항에 있어서, 상기 Q는 질소인 것을 특징으로 하는 개선된 변형가능 빔.
  14. 제10항에 있어서, 상기 Q는 금, 칼슘, 구리, 철, 하프늄, 마그네슘, 니오븀, 니켈, 스칸듐, 탄달, 지르코늄, 바륨, 몰리브덴, 사마륨, 텅스텐, 루테늄, 바나듐, 큘룸븀, 이리듐, 로듐, 리듐, 안티몬, 티타늄, 세륨, 가돌리늄, 홀뮴, 란탄, 루테튬, 나돌리늄, 사마륨, 테르븀, 셀레늄, 탄소, 비소, 붕소, 인 및 질소로 이루어진 그룹에서 선택되는 것을 특징으로 하는 개선된 변형가능 빔.
  15. 변형가능한 빔의 의해 지지되어지는 편향가능한 질량체를 포함하며, 상기 빔은 상기 질량체의 편향에 의해 변형되어지는 형의 미소기계 장치의 개선된 변형가능 빔에 있어서, 상기 빔은 알루미늄율 포함한 금속간 화합물 알루미늄을 포함한 화합물 반도체; 알루미늄과 회토류를 포함한 화합물 및; 알루미늄과 비금속을 포함한 화합물로 이루어진 그룹에서 선택된 물질로 구성되는 것을 특징으로 하는 개선된 변형가능 빔.
  16. 제15항에 있어서, 상기 물질은 Al2Au, Al2Ca, Al2Cu, Al3Fe, Al3Hf, Al3Mg2, Al3Nb, Al3Ni, Al3Sc, Al3Ta, Al3Zr, Al4Ba, Al4Mo, Al4Sr, Al4W, Al6Ru, Al7Cr. Al8V5, Al9Co2, Al9Ir2, Al9Rh2, AlLi, Al3Ti 또는 AlTi인 것을 특징으로 하는 개선된 변형가능 빔.
  17. 제16항에 있어서, 상기 물질은 Al3Ti인 것을 특징으로 하는 개선된 변형가능 빔.
  18. 제16항에 있어서, 상기 물질은 AlTi인 것을 특징으로 하는 개선된 변형가능 빔.
  19. 제16항에 있어서, 상기 물질은 Al3Ti와 AlTi의 혼합물인 것을 특징으로 하는 개선된 변형가능 빔.
  20. 제16항에 있어서, 상기 물질은 AlN인 것을 특징으로 하는 개선된 변형가능 빔.
  21. 제16항에 있어서, 상기 물질은 AlN과 Al3Ti의 혼합물인 것을 특징으로 하는 개선된 변형가능 빔.
  22. 제16항에 있어서, 상기 물질은 알루미늄을 포함한 화합물 반도체인 것을 특징으로 하는 개선된 변형가능 빔.
  23. 제22항에 있어서, 상기 물질은 AlSb, AlAs. AlP 또는 AlN인 것을 특징으로 하는 개선된 변형가능 빔.
  24. 제16항에 있어서, 상기 물질은 알루미늄과 회토류를 포함한 화합물인 것을 특징으로 하는 개선된 변형가능 빔.
  25. 제24항에 있어서, 상기 물질은 Al3Ce, Al3Gd, Al3Ho, Al3La, Al3Lu. Al3Nd, Al3Sm 또는 Al3Tb인 것을 특징으로 하는 개선된 변형가능 빔.
  26. 제16항에 있어서, 상기 물질은 알루미늄과 비금속을 포함한 화합물인 것을 특징으로 하는 개선된 변형가능 빔.
  27. 제26항에 있어서, 상기 물질은 Al2Se3, Al4C3, 또는 AlB2인 것을 특징으로 하는 개선된 변형가능 빔.
  28. 제16항에 있어서, 상기 물질은 알루미늄 및 알루미늄 합금을 에칭하는데 사용된 것과 동일한 또는 유사한 에칭제 및 공정에 의해 에칭가능한 것을 특징으로 하는 개선된 변형가능 빔.
  29. 제16항에 있어서, 상기 빔은 스퍼터링에 의해 형성되는 것을 특징으로 하는 개선된 변형가능 빔.
  30. 제16항에 있어서, 상기 물질은 알루미늄 또는 알루미늄 합금보다 강하며 덜 이완되는 것을 특징으로 하는 개선된 변형가능 빔.
  31. 변형가능한 빔에 의해 지지되어지는 편향가능한 질량체를 포함하며, 상기 빔은 상기 질량체의 편향에 의해 변형되어지는 형의 미소기계 장치의 개선된 변형가능 빔에 있어서, 상기 빔은 둘 또는 그 이상의 전기 전도성 알루미늄 화합물 중 하나 또는 이를 혼합물로 이루어지며, 상기 알루미늄 화합물은 (a) 비교적 고융점을 가지며 FCC 결정 구조보다 적은 1차 슬립 시스템을 나타내며, (b) 알루미늄 및 알루미늄 합금을 에칭하는 데 사용된 것과 동일한 또는 유사한 에칭제 및 공정에 의해 에칭가능하며, (c) 스퍼터링에 의해 침작가능하며, (d) 알루미늄 또는 알루미늄 합금보다 강하며 덜 이완되어지는 것을 특징으로 하는 개선된 변형가능 빔.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950040973A 1994-11-14 1995-11-13 개량된빔을갖는미소기계장치 KR100412003B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/339,363 1994-11-14
US08/339,363 US5552924A (en) 1994-11-14 1994-11-14 Micromechanical device having an improved beam

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KR960018622A true KR960018622A (ko) 1996-06-17
KR100412003B1 KR100412003B1 (ko) 2004-03-20

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US (1) US5552924A (ko)
EP (1) EP0712022B1 (ko)
JP (1) JPH08227041A (ko)
KR (1) KR100412003B1 (ko)
DE (1) DE69529880T2 (ko)
TW (1) TW313661B (ko)

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TW313661B (ko) 1997-08-21
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