KR960015854A - Device Separation Method of Semiconductor Devices - Google Patents
Device Separation Method of Semiconductor Devices Download PDFInfo
- Publication number
- KR960015854A KR960015854A KR1019940027917A KR19940027917A KR960015854A KR 960015854 A KR960015854 A KR 960015854A KR 1019940027917 A KR1019940027917 A KR 1019940027917A KR 19940027917 A KR19940027917 A KR 19940027917A KR 960015854 A KR960015854 A KR 960015854A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- nitride film
- semiconductor substrate
- oxide film
- trench
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000000926 separation method Methods 0.000 title 1
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims abstract 18
- 239000000758 substrate Substances 0.000 claims abstract 13
- 125000006850 spacer group Chemical group 0.000 claims abstract 7
- 238000005530 etching Methods 0.000 claims abstract 3
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
본 발명은 반도체소자의 소자분리 방법에 관한 것으로서, 반도체기판에서 소자분리 영역으로 예정되어 있는 부분을 노출시키는 질화막 패턴을 형성하고 상기 질화막 패턴의 측벽에 질화막으로된 스페이서를 형성하며, 그에 의해 노출되는 반도체기판의 소정두께를 등방성 식각하여 언더컷이진 트랜치를 형성하어 부피팽창에 따른 스트레스를 감소시키며, 상기 트랜치의 측벽 부분에 질화막 패턴을 형성하여 산화막과 반도체기판의 경계 부분에 산소가 침투하는 것을 방지한 후, 열산화를 실시하여 소자분리 산화막을 형성함으로써, 반도체기판의 스트레스가 감소되어 격자결함에 따른 누실전류 증가를 방지하여 소자동작의 신뢰성을 향상시킬 수 있으며, 버즈빅의 크기가 감소되어 고자의 고집적화에 유리하고 공정수율을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation method of a semiconductor device, comprising forming a nitride film pattern exposing a portion intended for a device isolation region on a semiconductor substrate, and forming a spacer of a nitride film on a sidewall of the nitride film pattern. Isotropic etching of a predetermined thickness of the semiconductor substrate forms an undercut trench to reduce stress due to volume expansion, and a nitride film pattern is formed on the sidewalls of the trench to prevent oxygen from penetrating the boundary between the oxide film and the semiconductor substrate. After the thermal oxidation is performed to form a device isolation oxide film, the stress of the semiconductor substrate is reduced to prevent leakage current increase due to lattice defects, thereby improving the reliability of the device operation. It is advantageous for high integration and improves process yield.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1A도 내지 제1E도는 본 발명의 일실시예에 따른 반도체소자의 소자분리 공정도,1A through 1E are device isolation process diagrams of a semiconductor device according to an embodiment of the present invention;
제2A도 내지 제2C도는 본 발명의 다른 실시예에 따른 반도체소자의 소자분리 공정도.2A to 2C are device isolation process diagrams of a semiconductor device according to another embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940027917A KR0166489B1 (en) | 1994-10-28 | 1994-10-28 | Method of element isolation on a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940027917A KR0166489B1 (en) | 1994-10-28 | 1994-10-28 | Method of element isolation on a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960015854A true KR960015854A (en) | 1996-05-22 |
KR0166489B1 KR0166489B1 (en) | 1999-02-01 |
Family
ID=19396333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940027917A KR0166489B1 (en) | 1994-10-28 | 1994-10-28 | Method of element isolation on a semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0166489B1 (en) |
-
1994
- 1994-10-28 KR KR1019940027917A patent/KR0166489B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0166489B1 (en) | 1999-02-01 |
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GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
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LAPS | Lapse due to unpaid annual fee |