KR960015046A - FT repairable pixel defect with laser - Google Patents

FT repairable pixel defect with laser Download PDF

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Publication number
KR960015046A
KR960015046A KR1019940025999A KR19940025999A KR960015046A KR 960015046 A KR960015046 A KR 960015046A KR 1019940025999 A KR1019940025999 A KR 1019940025999A KR 19940025999 A KR19940025999 A KR 19940025999A KR 960015046 A KR960015046 A KR 960015046A
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KR
South Korea
Prior art keywords
laser
pixel electrode
electrode
tft
pixel
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Application number
KR1019940025999A
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Korean (ko)
Other versions
KR0145654B1 (en
Inventor
김동규
박운용
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김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019940025999A priority Critical patent/KR0145654B1/en
Publication of KR960015046A publication Critical patent/KR960015046A/en
Application granted granted Critical
Publication of KR0145654B1 publication Critical patent/KR0145654B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

이 발명은 액정표시장치에 있어서, 레이저로 화소결함이 수리가능한 티에프티에 관한 것으로, 드레인 전극과 화소전극을 소정의 크기로 오버랩시켜서 비아 홀의 오픈 불량시에 오버 랩부를 레이저를 이용하여 쇼트시킴으로써 드레인 전극과 화소전극을 전기적으로 연결시켜 불량을 해결하여 수율을 향상시키는 것을 동작상의 특징으로 하는 레이저로 화소결합이 수리가능한 티에프티에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a TFT which can repair pixel defects with a laser in a liquid crystal display, and overlaps the drain electrode and the pixel electrode to a predetermined size, and shortens the overlap portion using a laser in the event of an open failure of a via hole. The present invention relates to a TFT capable of repairing pixel coupling with a laser, which is characterized by an electrical connection between a pixel electrode and an electrode to solve a defect and improve a yield.

Description

레이저로 화소결함이 수리가능한 티에프티FT repairable pixel defect with laser

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 이 발명의 실시예에 따른 레이저로 화소결함이 수리가능한 티에프티의 평면도이다.3 is a plan view of a TFT where pixel defects are repairable with a laser according to an embodiment of the present invention.

Claims (4)

절연기판과; 상기 절연기판 위에 형성되어 있는 게이트와; 상기 게이트의 위에 형성되어 절연을 하기 위한 게이트 절연막과; 상기 게이트 절연막 위에 형성되어 있는 반도체막과; 상기 반도체막 위에 형성되어 있는 소스 전극과; 상기 반도체막 위에 형성되어 있는 소스 전극과; 상기 반도체막 위에 형성되어 있는 드레인 전극과; 상기 소스 및 드레인 전극을 보호하기 위한 보호막과; 수리가 가능하도록 형성되어 있는 화소전극으로 구성되어짐을 특징으로 하는 레이저로 화소결함이 수리가능한 티에프티.An insulating substrate; A gate formed on the insulating substrate; A gate insulating film formed on the gate to insulate the gate; A semiconductor film formed on the gate insulating film; A source electrode formed on the semiconductor film; A source electrode formed on the semiconductor film; A drain electrode formed on the semiconductor film; A protective film for protecting the source and drain electrodes; The TFT which can repair a pixel defect with the laser characterized by consisting of the pixel electrode formed so that repair is possible. 제1항에 있어서, 상기한 화소전극과 드레인 전극을 화소전극밖에서 서로 겹치도록 구성하여 화소전극 밖에서 레이저 쇼팅이 가능하도록 한 레이저로 화소결함이 수리가능한 티에프티.2. The TFT of claim 1, wherein the pixel electrode and the drain electrode are configured to overlap each other outside the pixel electrode to enable laser shorting outside the pixel electrode. 제1항에 있어서, 상기한 화소전극은 레이저 쇼팅패턴부가 형성되어 있는 것을 특징으로 하는 레이저로 화소결함이 수리가능한 티에프티.2. The TFT of claim 1, wherein the pixel electrode has a laser shorting pattern portion formed thereon. 제1항에 있어서, 상기한 화소전극은 레이저 쇼팅 패턴부를 쇼트시킴으로써 드레인 전극과 화소전극을 전기적으로 연결시키는 것을 특징으로 하는 레이저로 화소결함이 수리가능한 티에프티.The TFT of claim 1, wherein the pixel electrode electrically connects the drain electrode and the pixel electrode by shorting the laser shorting pattern portion. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940025999A 1994-10-11 1994-10-11 Repairable tft and repair method of pixel defect by laser KR0145654B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940025999A KR0145654B1 (en) 1994-10-11 1994-10-11 Repairable tft and repair method of pixel defect by laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940025999A KR0145654B1 (en) 1994-10-11 1994-10-11 Repairable tft and repair method of pixel defect by laser

Publications (2)

Publication Number Publication Date
KR960015046A true KR960015046A (en) 1996-05-22
KR0145654B1 KR0145654B1 (en) 1998-09-15

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Family Applications (1)

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KR1019940025999A KR0145654B1 (en) 1994-10-11 1994-10-11 Repairable tft and repair method of pixel defect by laser

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100441841B1 (en) * 1996-08-30 2004-11-16 삼성전자주식회사 Method for detecting an off pixel adjacency inferiority of a panel for an lcd element, specially concerned in previously sorting out an ito film remaining on a tft channel

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100431624B1 (en) * 1996-08-23 2004-08-12 삼성전자주식회사 Method for repairing pixel defects including step of spraying pigment material to pixels with defects
CN1560899B (en) * 2004-02-16 2010-05-05 友达光电股份有限公司 Thin film transistor array substrate and its repair method
KR102322240B1 (en) * 2015-04-28 2021-11-08 삼성디스플레이 주식회사 Display substrate, repair method of display substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100441841B1 (en) * 1996-08-30 2004-11-16 삼성전자주식회사 Method for detecting an off pixel adjacency inferiority of a panel for an lcd element, specially concerned in previously sorting out an ito film remaining on a tft channel

Also Published As

Publication number Publication date
KR0145654B1 (en) 1998-09-15

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