KR960012475A - 유전 영역 상의 전하 형성 방지 장치 - Google Patents

유전 영역 상의 전하 형성 방지 장치

Info

Publication number
KR960012475A
KR960012475A KR1019950029646A KR19950029646A KR960012475A KR 960012475 A KR960012475 A KR 960012475A KR 1019950029646 A KR1019950029646 A KR 1019950029646A KR 19950029646 A KR19950029646 A KR 19950029646A KR 960012475 A KR960012475 A KR 960012475A
Authority
KR
South Korea
Prior art keywords
dielectric regions
charge build
prevents charge
prevents
build
Prior art date
Application number
KR1019950029646A
Other languages
English (en)
Other versions
KR100372905B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012475A publication Critical patent/KR960012475A/ko
Application granted granted Critical
Publication of KR100372905B1 publication Critical patent/KR100372905B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019950029646A 1994-09-13 1995-09-12 산화물영역보호장치 KR100372905B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30522994A 1994-09-13 1994-09-13
US08/305,229 1994-09-13

Publications (2)

Publication Number Publication Date
KR960012475A true KR960012475A (ko) 1996-04-20
KR100372905B1 KR100372905B1 (ko) 2003-05-01

Family

ID=23179906

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950029646A KR100372905B1 (ko) 1994-09-13 1995-09-12 산화물영역보호장치

Country Status (3)

Country Link
US (1) US5760445A (ko)
JP (1) JPH08181284A (ko)
KR (1) KR100372905B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8605911B2 (en) 2001-07-10 2013-12-10 Dolby International Ab Efficient and scalable parametric stereo coding for low bitrate audio coding applications
US9761236B2 (en) 2001-11-29 2017-09-12 Dolby International Ab High frequency regeneration of an audio signal with synthetic sinusoid addition

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US5793069A (en) * 1996-06-28 1998-08-11 Intel Corporation Apparatus for protecting gate electrodes of target transistors in a gate array from gate charging by employing free transistors in the gate array
US6432726B2 (en) * 1997-03-31 2002-08-13 Artisan Components, Inc. Method and apparatus for reducing process-induced charge buildup
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
JP3221369B2 (ja) 1997-09-19 2001-10-22 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
JP3926011B2 (ja) * 1997-12-24 2007-06-06 株式会社ルネサステクノロジ 半導体装置の設計方法
US6091114A (en) * 1998-03-31 2000-07-18 Texas Instruments Incorporated Method and apparatus for protecting gate oxide from process-induced charging effects
US6215148B1 (en) 1998-05-20 2001-04-10 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
US6348711B1 (en) 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
JP3186701B2 (ja) * 1998-07-13 2001-07-11 日本電気株式会社 半導体装置
US6211051B1 (en) 1999-04-14 2001-04-03 Lsi Logic Corporation Reduction of plasma damage at contact etch in MOS integrated circuits
US6433403B1 (en) 1999-04-21 2002-08-13 Micron Technology, Inc. Integrated circuit having temporary conductive path structure and method for forming the same
US6524872B1 (en) 1999-05-24 2003-02-25 Agere Systems Inc. Using fast hot-carrier aging method for measuring plasma charging damage
US6337502B1 (en) 1999-06-18 2002-01-08 Saifun Semicinductors Ltd. Method and circuit for minimizing the charging effect during manufacture of semiconductor devices
US6303510B1 (en) 1999-06-21 2001-10-16 Taiwan Semiconductor Manufacturing Company Plasma etch method with attenuated patterned layer charging
US6277723B1 (en) 1999-10-14 2001-08-21 Taiwan Semiconductor Manufacturing Company Plasma damage protection cell using floating N/P/N and P/N/P structure
US6429063B1 (en) 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection
US6490204B2 (en) 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
JP2002141421A (ja) 2000-10-31 2002-05-17 Toshiba Corp 半導体集積回路装置
JP4676116B2 (ja) * 2000-11-01 2011-04-27 セイコーインスツル株式会社 半導体装置
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6979868B2 (en) * 2001-04-18 2005-12-27 United Microelectronics Corp. Bypass circuits for reducing plasma damage
US6686254B2 (en) * 2001-04-27 2004-02-03 Motorola, Inc. Semiconductor structure and method for reducing charge damage
JP2003100899A (ja) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6885078B2 (en) * 2001-11-09 2005-04-26 Lsi Logic Corporation Circuit isolation utilizing MeV implantation
US7098107B2 (en) 2001-11-19 2006-08-29 Saifun Semiconductor Ltd. Protective layer in memory device and method therefor
US6583007B1 (en) 2001-12-20 2003-06-24 Saifun Semiconductors Ltd. Reducing secondary injection effects
US6934136B2 (en) * 2002-04-24 2005-08-23 Texas Instrument Incorporated ESD protection of noise decoupling capacitors
KR100444492B1 (ko) * 2002-05-16 2004-08-16 주식회사 하이닉스반도체 반도체소자의 제조 방법
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7196369B2 (en) * 2002-07-15 2007-03-27 Macronix International Co., Ltd. Plasma damage protection circuit for a semiconductor device
US6826107B2 (en) * 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7033900B1 (en) * 2003-03-27 2006-04-25 Cypress Semiconductor Corporation Protection of integrated circuit gates during metallization processes
US7142464B2 (en) * 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
JP4821086B2 (ja) * 2003-10-31 2011-11-24 富士電機株式会社 半導体装置
US7178126B2 (en) * 2004-01-21 2007-02-13 Oki Electric Industry Co., Ltd. Method of protecting a semiconductor integrated circuit from plasma damage
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
JP4507091B2 (ja) * 2004-12-13 2010-07-21 エルピーダメモリ株式会社 半導体装置の製造方法及び半導体装置
US7170816B2 (en) * 2004-12-16 2007-01-30 Macronix International Co., Ltd. Method and apparatus for passing charge from word lines during manufacture
US20060145263A1 (en) * 2005-01-06 2006-07-06 Macronix International Co., Ltd. Plasma damage protection circuit for protecting multiple word lines or strapped word lines of a memory device
US7116606B2 (en) * 2005-01-14 2006-10-03 Macronix International Co., Ltd. Method and circuit of plasma damage protection
US8053812B2 (en) * 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
EP1746645A3 (en) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Memory array with sub-minimum feature size word line spacing and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
DE102005044124B4 (de) * 2005-09-15 2010-11-25 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer integrierten Schaltung mit Gate-Selbstschutz, und integrierte Schaltung mit Gate-Selbstschutz
WO2007035416A2 (en) * 2005-09-15 2007-03-29 Texas Instruments Incorporated Integrated circuit with gate self-protection
US7221138B2 (en) * 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US20070087503A1 (en) * 2005-10-17 2007-04-19 Saifun Semiconductors, Ltd. Improving NROM device characteristics using adjusted gate work function
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7638835B2 (en) * 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7492016B2 (en) * 2006-03-31 2009-02-17 International Business Machines Corporation Protection against charging damage in hybrid orientation transistors
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
JP4570662B2 (ja) * 2008-01-16 2010-10-27 Ｏｋｉセミコンダクタ株式会社 デジタル・アナログ変換器
US7846800B2 (en) * 2008-03-06 2010-12-07 Chartered Semiconductor Manufacturing, Ltd. Avoiding plasma charging in integrated circuits
US8541845B2 (en) * 2011-01-11 2013-09-24 Infineon Technologies Ag Semiconductor discharge devices and methods of formation thereof
US9082617B2 (en) * 2013-12-17 2015-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and fabricating method thereof
US9490249B2 (en) 2014-04-30 2016-11-08 Macronix International Co., Ltd. Antenna effect discharge circuit and manufacturing method
US9490245B1 (en) * 2015-06-19 2016-11-08 Qualcomm Incorporated Circuit and layout for a high density antenna protection diode
US9659979B2 (en) * 2015-10-15 2017-05-23 International Business Machines Corporation Sensors including complementary lateral bipolar junction transistors

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US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
US4786956A (en) * 1982-10-20 1988-11-22 North American Philips Corporation, Signetics Division Input protection device for integrated circuits
JPH02119262A (ja) * 1988-10-28 1990-05-07 Toshiba Corp 半導体装置
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8605911B2 (en) 2001-07-10 2013-12-10 Dolby International Ab Efficient and scalable parametric stereo coding for low bitrate audio coding applications
US9792919B2 (en) 2001-07-10 2017-10-17 Dolby International Ab Efficient and scalable parametric stereo coding for low bitrate applications
US9799340B2 (en) 2001-07-10 2017-10-24 Dolby International Ab Efficient and scalable parametric stereo coding for low bitrate audio coding applications
US9799341B2 (en) 2001-07-10 2017-10-24 Dolby International Ab Efficient and scalable parametric stereo coding for low bitrate applications
US9865271B2 (en) 2001-07-10 2018-01-09 Dolby International Ab Efficient and scalable parametric stereo coding for low bitrate applications
US9761236B2 (en) 2001-11-29 2017-09-12 Dolby International Ab High frequency regeneration of an audio signal with synthetic sinusoid addition
US9761237B2 (en) 2001-11-29 2017-09-12 Dolby International Ab High frequency regeneration of an audio signal with synthetic sinusoid addition
US9761234B2 (en) 2001-11-29 2017-09-12 Dolby International Ab High frequency regeneration of an audio signal with synthetic sinusoid addition
US9779746B2 (en) 2001-11-29 2017-10-03 Dolby International Ab High frequency regeneration of an audio signal with synthetic sinusoid addition
US9792923B2 (en) 2001-11-29 2017-10-17 Dolby International Ab High frequency regeneration of an audio signal with synthetic sinusoid addition
US9812142B2 (en) 2001-11-29 2017-11-07 Dolby International Ab High frequency regeneration of an audio signal with synthetic sinusoid addition
US9818418B2 (en) 2001-11-29 2017-11-14 Dolby International Ab High frequency regeneration of an audio signal with synthetic sinusoid addition

Also Published As

Publication number Publication date
US5760445A (en) 1998-06-02
JPH08181284A (ja) 1996-07-12
KR100372905B1 (ko) 2003-05-01

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