KR960012423A - Device Separation Method of Semiconductor Device - Google Patents

Device Separation Method of Semiconductor Device Download PDF

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Publication number
KR960012423A
KR960012423A KR1019940021995A KR19940021995A KR960012423A KR 960012423 A KR960012423 A KR 960012423A KR 1019940021995 A KR1019940021995 A KR 1019940021995A KR 19940021995 A KR19940021995 A KR 19940021995A KR 960012423 A KR960012423 A KR 960012423A
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KR
South Korea
Prior art keywords
device isolation
film
semiconductor device
photoresist
region
Prior art date
Application number
KR1019940021995A
Other languages
Korean (ko)
Inventor
이현우
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940021995A priority Critical patent/KR960012423A/en
Publication of KR960012423A publication Critical patent/KR960012423A/en

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Abstract

본 발명은 반도체 소자의 소자 분리막 제조방법에 관한 것으로, 셀과 주변회로영역에 각각 크고 작은 소자 분리막을 형성할 때, 소자 분리영역에 형성된 트렌치(Trench)를 산화물로 채운후 실리레이션(Silylation) 공정으로 좁고 넓은 소자 분리영역상에 감광막을 남기고, 다시 감광막을 도포한 후 평탄화시키고 에치백(Etchback)하여 넓은 소자 분리영역상에만 감광막을 남기고, 이후 산화물을 에치백하여 광역 평탄화를 이룰 수 있는 반도체 소자의 소자 분리막 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a device isolation film of a semiconductor device, and when forming large and small device isolation films in a cell and a peripheral circuit region, a silicide process after filling trenches formed in the device isolation region with oxide A semiconductor device capable of leaving a photoresist film on a narrow and wide device isolation region, applying the photoresist film again, and then flattening and etching back to leave a photoresist on only a wide device isolation region, and then etching back oxide to achieve planarization It relates to a method for producing a device separator.

Description

반도체 소자의 소자 분리막 제조방법Device Separation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1F도는 본 발명에 의한 반도체 소자의 소자 분리막 제조단계를 도시한 소자의 단면도.1F is a cross-sectional view of a device showing a device isolation film manufacturing step of a semiconductor device according to the present invention.

Claims (1)

반도체 소자의 소자 분리막 제조방법에 있어서, 소자 분리막이 형성될 영역의 실리콘 기판에 트랜치를 형성한 후 산화막으로 채우는 단계와, 상기 단계로부터 감광막을 도포한 후 상기 트랜치와 중첩되게 감광막 패턴을 남기고, 다시 감광막을 전체구조 상부에 도포한 후 에치백 공정으로 단차가 낮은 영역에 감광막을 남기는 단계와, 상기 단계로부터 단차가 높은 부분의 산화막을 에치백공정으로 제거하여 트랜치내에만 산화막이 남도록 하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 소자 분리막 제조방법.In the method of manufacturing a device isolation film of a semiconductor device, forming a trench in the silicon substrate of the region where the device isolation film is to be formed and filling it with an oxide film, and after applying the photoresist film from the step, leaving a photoresist pattern overlapping the trench, and again Applying the photoresist film to the upper part of the entire structure and leaving the photoresist film in a region having a low step by an etch back process, and removing the oxide film of a portion having a high step by an etch back process from the step so that the oxide film remains only in the trench. A device isolation film manufacturing method for a semiconductor device, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940021995A 1994-09-01 1994-09-01 Device Separation Method of Semiconductor Device KR960012423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940021995A KR960012423A (en) 1994-09-01 1994-09-01 Device Separation Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940021995A KR960012423A (en) 1994-09-01 1994-09-01 Device Separation Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR960012423A true KR960012423A (en) 1996-04-20

Family

ID=66686631

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940021995A KR960012423A (en) 1994-09-01 1994-09-01 Device Separation Method of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR960012423A (en)

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