KR950014973A - Microcontact Formation Method of Semiconductor Device - Google Patents
Microcontact Formation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR950014973A KR950014973A KR1019930024238A KR930024238A KR950014973A KR 950014973 A KR950014973 A KR 950014973A KR 1019930024238 A KR1019930024238 A KR 1019930024238A KR 930024238 A KR930024238 A KR 930024238A KR 950014973 A KR950014973 A KR 950014973A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- semiconductor device
- planarization layer
- mask
- photoresist pattern
- Prior art date
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Abstract
본 발명은 반도체소자의 미세콘택 형성방법에 관한 것으로, 특히 단차를 갖는 소자를 평탄화시켜 주면서 자기정렬적인 방식으로 미세콘택을 형성하는 방법으로 평탄화층 하부에 평탄화층과 차이가 큰 다결정실리콘층을 적층함으로써 평탄화층을 식각한 후에 자기정렬된 콘택트홀을 형성하며 미세콘택을 용이하게하는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a micro contact of a semiconductor device, and in particular, a method of forming a micro contact in a self-aligned manner while flattening a device having a step, and stacking a polysilicon layer having a large difference from the planarization layer under the planarization layer The present invention relates to a technology for forming a self-aligned contact hole after etching the planarization layer and facilitating fine contact.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제2D도는 종래기술에 실시예에 의한 반도체소자의 미세콘택 형성공정을 도시한 단면도,1A to 2D are cross-sectional views showing a microcontact formation process of a semiconductor device according to an embodiment in the prior art;
제2A도 내지 제2F도는 본 발명의 실시예에 의해 반도체소자의 미세콘택 형성공정을 도시한 단면도.2A to 2F are sectional views showing a microcontact forming process of a semiconductor device according to an embodiment of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930024238A KR950014973A (en) | 1993-11-15 | 1993-11-15 | Microcontact Formation Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930024238A KR950014973A (en) | 1993-11-15 | 1993-11-15 | Microcontact Formation Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950014973A true KR950014973A (en) | 1995-06-16 |
Family
ID=66825434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930024238A KR950014973A (en) | 1993-11-15 | 1993-11-15 | Microcontact Formation Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950014973A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970022583A (en) * | 1995-10-27 | 1997-05-30 | 알베르트 발도르프, 롤프 옴케 | Boundless contact etching method and selective anisotropic etching method by sidewall spacer |
-
1993
- 1993-11-15 KR KR1019930024238A patent/KR950014973A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970022583A (en) * | 1995-10-27 | 1997-05-30 | 알베르트 발도르프, 롤프 옴케 | Boundless contact etching method and selective anisotropic etching method by sidewall spacer |
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