KR960012345A - Silicon Wafer Cleaning Method - Google Patents

Silicon Wafer Cleaning Method Download PDF

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Publication number
KR960012345A
KR960012345A KR1019940024728A KR19940024728A KR960012345A KR 960012345 A KR960012345 A KR 960012345A KR 1019940024728 A KR1019940024728 A KR 1019940024728A KR 19940024728 A KR19940024728 A KR 19940024728A KR 960012345 A KR960012345 A KR 960012345A
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KR
South Korea
Prior art keywords
deionized water
silicon wafer
rinse
cleaning method
wafer cleaning
Prior art date
Application number
KR1019940024728A
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Korean (ko)
Inventor
조경화
이강완
Original Assignee
김우중
주식회사 대 우
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김우중, 주식회사 대 우 filed Critical 김우중
Priority to KR1019940024728A priority Critical patent/KR960012345A/en
Publication of KR960012345A publication Critical patent/KR960012345A/en

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Abstract

본 발명은 실리콘웨이퍼의 세정방법에 관한 것으로서, 실리콘웨이퍼 표면을 HB4OH가 포함된 세정용액으로 식각한 후 상온의 탈이온수와 고온의 탈이온수로 차례로 1차 및 2차 린스를 하고 상기 탈이온수를 제거하여 건조시키는 것을 특징으로 한다. 따라서, 1차 린스에 의해 안정화시킨 후 2차 린스에 의해 불안정한 댕글링결합 및 무질서도를 증가시키지 않고 세정용액을 완전히 제거하므로 표면의 조도가 감속된다.The present invention relates to a method for cleaning a silicon wafer, and the surface of the silicon wafer is etched with a cleaning solution containing HB 4 OH, and then the primary and secondary rinse with deionized water at room temperature and high temperature deionized water in that order and deionized water. It is characterized by removing to dry. Therefore, the surface roughness is reduced because the cleaning solution is completely removed without increasing the unstable dangling bonds and disorder by the second rinse after stabilization by the first rinse.

Description

실리콘웨이퍼의 세정방법Silicon Wafer Cleaning Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 세정방법에 따른 실리콘웨이퍼 표면의 조도를 나타내는 사진.Figure 2 is a photograph showing the roughness of the surface of the silicon wafer according to the cleaning method of the present invention.

Claims (4)

실리콘웨이퍼 표면을 HB4OH가 포함된 세정용액으로 식각한 후 상온의 탈이온수와 고온의 탈이온수로 차례로 1차 2차 린스를 하고 상기 탈이온수를 제거하여 건조시키는 것을 특징으로 실리콘웨이퍼의 세정방법.After etching the surface of the silicon wafer with a cleaning solution containing HB 4 OH, the first secondary rinse with deionized water at room temperature and high temperature deionized water in order, and then the deionized water is removed and dried. . 제1항에 있어서, 상기 1차 린스는 상기 상온의 탈이온수를 분사하는 실리콘웨이퍼의 세정방법.The method of claim 1, wherein the primary rinse sprays deionized water at room temperature. 제1항에 있어서, 상기 2차 린스는 상기 고온의 탈이온수를 분사하는 실리콘웨이퍼의 세정방법.The method of claim 1, wherein the secondary rinse sprays the hot deionized water. 제3항에 있어서, 상기 고온의 탈이온수는 60~70℃인 실리콘웨이퍼의 세정방법.The method of claim 3, wherein the high temperature deionized water is 60 ~ 70 ℃. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940024728A 1994-09-29 1994-09-29 Silicon Wafer Cleaning Method KR960012345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940024728A KR960012345A (en) 1994-09-29 1994-09-29 Silicon Wafer Cleaning Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940024728A KR960012345A (en) 1994-09-29 1994-09-29 Silicon Wafer Cleaning Method

Publications (1)

Publication Number Publication Date
KR960012345A true KR960012345A (en) 1996-04-20

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ID=66766753

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940024728A KR960012345A (en) 1994-09-29 1994-09-29 Silicon Wafer Cleaning Method

Country Status (1)

Country Link
KR (1) KR960012345A (en)

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