KR960011940B1 - Semiconductor memory device having thin film transistor and fabricating method thereof - Google Patents

Semiconductor memory device having thin film transistor and fabricating method thereof Download PDF

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Publication number
KR960011940B1
KR960011940B1 KR92005024A KR920005024A KR960011940B1 KR 960011940 B1 KR960011940 B1 KR 960011940B1 KR 92005024 A KR92005024 A KR 92005024A KR 920005024 A KR920005024 A KR 920005024A KR 960011940 B1 KR960011940 B1 KR 960011940B1
Authority
KR
South Korea
Prior art keywords
thin film
memory device
film transistor
semiconductor memory
fabricating method
Prior art date
Application number
KR92005024A
Other languages
English (en)
Inventor
Daiji Ema
Gazoh Itabasi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3085916A external-priority patent/JPH04299568A/ja
Priority claimed from JP3145940A external-priority patent/JP2539304B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of KR960011940B1 publication Critical patent/KR960011940B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
KR92005024A 1991-03-27 1992-03-27 Semiconductor memory device having thin film transistor and fabricating method thereof KR960011940B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3085916A JPH04299568A (ja) 1991-03-27 1991-03-27 半導体記憶装置及びその製造方法
JP3145940A JP2539304B2 (ja) 1991-06-18 1991-06-18 半導体記憶装置及びその製造方法

Publications (1)

Publication Number Publication Date
KR960011940B1 true KR960011940B1 (en) 1996-09-04

Family

ID=26426920

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92005024A KR960011940B1 (en) 1991-03-27 1992-03-27 Semiconductor memory device having thin film transistor and fabricating method thereof

Country Status (4)

Country Link
US (1) US5594267A (ko)
EP (1) EP0510370B1 (ko)
KR (1) KR960011940B1 (ko)
DE (1) DE69229842T2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04250663A (ja) * 1991-01-25 1992-09-07 Sony Corp 半導体メモリ装置
DE19534784C1 (de) * 1995-09-19 1997-04-24 Siemens Ag Halbleiter-Schaltungselement und Verfahren zu seiner Herstellung
US5973369A (en) * 1997-03-11 1999-10-26 Nec Corporation SRAM having P-channel TFT as load element with less series-connected high resistance
KR100214841B1 (ko) * 1996-03-29 1999-08-02 김주용 반도체 소자 및 그의 제조방법
US6004881A (en) * 1997-04-24 1999-12-21 The United States Of America As Represented By The Secretary Of The Air Force Digital wet etching of semiconductor materials
US7372720B1 (en) 2005-02-16 2008-05-13 Altera Corporation Methods and apparatus for decreasing soft errors and cell leakage in integrated circuit structures

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60178646A (ja) * 1984-02-24 1985-09-12 Nec Corp 静電シ−ルドを有する半導体集積回路
JPS60224246A (ja) * 1984-04-20 1985-11-08 Fujitsu Ltd 半導体装置
US4679171A (en) * 1985-02-07 1987-07-07 Visic, Inc. MOS/CMOS memory cell
US4764801A (en) * 1985-10-08 1988-08-16 Motorola Inc. Poly-sidewall contact transistors
JPS62169472A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd 半導体集積回路装置
JPH07112014B2 (ja) * 1986-07-09 1995-11-29 株式会社日立製作所 半導体記憶装置
JP2544396B2 (ja) * 1987-08-25 1996-10-16 株式会社日立製作所 半導体集積回路装置の製造方法
JP2544417B2 (ja) * 1987-11-30 1996-10-16 株式会社日立製作所 半導体集積回路装置
JP2547800B2 (ja) * 1987-11-30 1996-10-23 株式会社日立製作所 半導体集積回路装置及びその製造方法
EP0365690B1 (en) * 1988-05-07 1999-12-22 Seiko Epson Corporation Semiconductor device and semiconductor memory device

Also Published As

Publication number Publication date
DE69229842T2 (de) 2000-04-20
EP0510370B1 (en) 1999-08-25
US5594267A (en) 1997-01-14
DE69229842D1 (de) 1999-09-30
EP0510370A1 (en) 1992-10-28

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