KR960011385A - 얇은 산화막 두께 측정방법 - Google Patents

얇은 산화막 두께 측정방법 Download PDF

Info

Publication number
KR960011385A
KR960011385A KR1019940024222A KR19940024222A KR960011385A KR 960011385 A KR960011385 A KR 960011385A KR 1019940024222 A KR1019940024222 A KR 1019940024222A KR 19940024222 A KR19940024222 A KR 19940024222A KR 960011385 A KR960011385 A KR 960011385A
Authority
KR
South Korea
Prior art keywords
oxide film
distribution curve
thickness
thin oxide
measuring
Prior art date
Application number
KR1019940024222A
Other languages
English (en)
Other versions
KR0119369B1 (en
Inventor
백기호
Original Assignee
김주용
현대전자산 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산 주식회사 filed Critical 김주용
Priority to KR94024222A priority Critical patent/KR0119369B1/ko
Publication of KR960011385A publication Critical patent/KR960011385A/ko
Application granted granted Critical
Publication of KR0119369B1 publication Critical patent/KR0119369B1/ko

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

본 발명은 반도체 소자와 얇은 산화막 두께 측정방법에 관한 것으로, DESIRE 공정을 적용하여 감광막 패턴을 형성할때 실리레이션과 건식현상후 현성되는 50A 이하의 산화막을 X레이 광전자 분광기를 이용하여 두께를 측정하는 방법에 관한 것이다.

Description

얇은 산화막 두께 측정방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 X레이 광전자 분광기를 이용하여 분석하는 것을 도시한 도면,
제2도는 X레이 광전자 분광기를 이용하여 예정된 원소들의 가우시안 분포곡선을 도시한 도면.

Claims (4)

  1. 실리레이화된 감광막 패턴 상부에 형성되는 얇은 두께의 산화막 두께를 측정하기 위해 X레이 광전자 분광기를 사용하여 X레이를 상기 산화막표면에 주사하고, 상기 산화막 표면에서 튀어나오는 광전자를 에정돈 각도(θ)에서 분석기로 측정하여 SiO2, SiO, SiC의 분포곡선을 얻는 단계와, 상기 원소들의 분포곡선에서 SiO2와 SiO의 분포곡선을 적분하여 산화막의 세기를 구하고, SiC의 분포곡선을 적분하여 산화막 하부의 실리레이트된 감광막 세기를 구하는 단계와, 상기 산화막이 세기와 실레이트된 감광막의 세기의 비를 R로 하고, λ는 2.7nm, K는 2.7로 사용하는 ln(R/K+1)=d/(λsine)식에 대입하여 산화막 두께를 구하는 단계를 특징으로 하는 얇은 산화막 두께 측정 방법.
  2. 제1항에 있어서, 상기 산화막의 세기를 구하는 식은 I0*(1-e-d(λsine))인 것을 특징으로 하는 얇은 산화막 두께 측정방법.
  3. 제1항에 있어서, 상기 감광막의 세기를 구하는 식은 I0*(1-e-d(λsine))인 것을 특징으로 하는 얇은 산화막 두께 측정방법.
  4. 제1항에 있어서, 상기 산화막 표면에서 튀어나오는 광전자를 여러각도(e)에서 분석기로 측정하여 얻어지는 예정된 각도의 가우시안 분포곡선을 이용하여 ln(R/K+1)=d/(λsine)의 값을 각각 구하고, 이 값들을 평균한 다음, 이값을 최종적인 기울기(d/λ)로 설정하고, 두께(d)를 구하는 것을 특징으로 하는 얇은 산화막 두께 측정방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR94024222A 1994-09-26 1994-09-26 Thickness measuring method for thin oxidation KR0119369B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR94024222A KR0119369B1 (en) 1994-09-26 1994-09-26 Thickness measuring method for thin oxidation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94024222A KR0119369B1 (en) 1994-09-26 1994-09-26 Thickness measuring method for thin oxidation

Publications (2)

Publication Number Publication Date
KR960011385A true KR960011385A (ko) 1996-04-20
KR0119369B1 KR0119369B1 (en) 1997-09-30

Family

ID=19393511

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94024222A KR0119369B1 (en) 1994-09-26 1994-09-26 Thickness measuring method for thin oxidation

Country Status (1)

Country Link
KR (1) KR0119369B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113514021A (zh) * 2021-06-10 2021-10-19 中国空气动力研究与发展中心计算空气动力研究所 一种复合材料质量损失和氧化层厚度的评估方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113514021A (zh) * 2021-06-10 2021-10-19 中国空气动力研究与发展中心计算空气动力研究所 一种复合材料质量损失和氧化层厚度的评估方法
CN113514021B (zh) * 2021-06-10 2023-08-11 中国空气动力研究与发展中心计算空气动力研究所 一种复合材料质量损失和氧化层厚度的评估方法

Also Published As

Publication number Publication date
KR0119369B1 (en) 1997-09-30

Similar Documents

Publication Publication Date Title
JP5603870B2 (ja) 波長変調スペクトロスコピー装置の較正方法
Nakanishi et al. Fabrication of quartz microchips with optical slit and development of a linear imaging UV detector for microchip electrophoresis systems
KR920005329A (ko) 반도체소자용 패턴의 형성 또는 시험방법
KR960011385A (ko) 얇은 산화막 두께 측정방법
Truong et al. A Partially Etched Structure of Light‐Addressable Potentiometric Sensor for High‐Spatial‐Resolution and High‐Speed Chemical Imaging
US6822260B1 (en) Linewidth measurement structure with embedded scatterometry structure
Rand Spectrophotometric thickness measurement for very thin SiO2 films on Si
Lenhart et al. X-ray absorption spectroscopy to probe surface composition and surface deprotection in photoresist films
JPH11316187A (ja) エリプソメトリ及びエリプソメータ、形状測定方法および半導体装置の製造方法
Vallon et al. Improvements of Fourier transform phase‐modulated ellipsometry
Nordquist et al. Comparison of negative resists for 100 nm electron-beam direct write and mask making applications
Ko et al. Evaluation of metal migration and determination of trace metals after microwave digestion for lithographic materials
US7054000B2 (en) Method of calibration of magnification of microscopes having different operational principles for bringing them into a single, absolute scale
Winchester On the determination of carbon, phosphorus, sulfur and silicon in grey cast irons using glow discharge optical emission spectrometry
Ricka Evaluation of nanosecond pulse–fluorometry measurements—no need for the excitation function
US4189639A (en) Process for analyzing charged particles
JP2645227B2 (ja) 蛍光ｘ線分析方法
JP3612245B2 (ja) 基板の不純物濃度分析方法
Simmons et al. A self-modeling approach to the resolution of XPS spectra into surface and bulk components
KR200169585Y1 (ko) 반도체 소자의 온도 테스트 장치
JP2001203250A (ja) 膜厚管理方法
JPH0232204A (ja) レジストパターン寸法測定方法
SU1689908A1 (ru) Способ определени содержани паров воды в атмосфере
Berger et al. Improved chemically amplified photoresist characterization using interdigitated electrode sensors: photoacid diffusivity measurements
Faifer et al. NEW SURFACE PHOTOVOLTAGE (SPV) METHOD FOR HIGH PRECISION MEASUREMENT OF THE MINORITY CARRIER DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY IN SILICON WAFERS

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090624

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee