KR960011385A - 얇은 산화막 두께 측정방법 - Google Patents

얇은 산화막 두께 측정방법 Download PDF

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Publication number
KR960011385A
KR960011385A KR1019940024222A KR19940024222A KR960011385A KR 960011385 A KR960011385 A KR 960011385A KR 1019940024222 A KR1019940024222 A KR 1019940024222A KR 19940024222 A KR19940024222 A KR 19940024222A KR 960011385 A KR960011385 A KR 960011385A
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South Korea
Prior art keywords
oxide film
distribution curve
thickness
thin oxide
measuring
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KR1019940024222A
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English (en)
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KR0119369B1 (en
Inventor
백기호
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김주용
현대전자산 주식회사
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Priority to KR94024222A priority Critical patent/KR0119369B1/ko
Publication of KR960011385A publication Critical patent/KR960011385A/ko
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Publication of KR0119369B1 publication Critical patent/KR0119369B1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

본 발명은 반도체 소자와 얇은 산화막 두께 측정방법에 관한 것으로, DESIRE 공정을 적용하여 감광막 패턴을 형성할때 실리레이션과 건식현상후 현성되는 50A 이하의 산화막을 X레이 광전자 분광기를 이용하여 두께를 측정하는 방법에 관한 것이다.

Description

얇은 산화막 두께 측정방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 X레이 광전자 분광기를 이용하여 분석하는 것을 도시한 도면,
제2도는 X레이 광전자 분광기를 이용하여 예정된 원소들의 가우시안 분포곡선을 도시한 도면.

Claims (4)

  1. 실리레이화된 감광막 패턴 상부에 형성되는 얇은 두께의 산화막 두께를 측정하기 위해 X레이 광전자 분광기를 사용하여 X레이를 상기 산화막표면에 주사하고, 상기 산화막 표면에서 튀어나오는 광전자를 에정돈 각도(θ)에서 분석기로 측정하여 SiO2, SiO, SiC의 분포곡선을 얻는 단계와, 상기 원소들의 분포곡선에서 SiO2와 SiO의 분포곡선을 적분하여 산화막의 세기를 구하고, SiC의 분포곡선을 적분하여 산화막 하부의 실리레이트된 감광막 세기를 구하는 단계와, 상기 산화막이 세기와 실레이트된 감광막의 세기의 비를 R로 하고, λ는 2.7nm, K는 2.7로 사용하는 ln(R/K+1)=d/(λsine)식에 대입하여 산화막 두께를 구하는 단계를 특징으로 하는 얇은 산화막 두께 측정 방법.
  2. 제1항에 있어서, 상기 산화막의 세기를 구하는 식은 I0*(1-e-d(λsine))인 것을 특징으로 하는 얇은 산화막 두께 측정방법.
  3. 제1항에 있어서, 상기 감광막의 세기를 구하는 식은 I0*(1-e-d(λsine))인 것을 특징으로 하는 얇은 산화막 두께 측정방법.
  4. 제1항에 있어서, 상기 산화막 표면에서 튀어나오는 광전자를 여러각도(e)에서 분석기로 측정하여 얻어지는 예정된 각도의 가우시안 분포곡선을 이용하여 ln(R/K+1)=d/(λsine)의 값을 각각 구하고, 이 값들을 평균한 다음, 이값을 최종적인 기울기(d/λ)로 설정하고, 두께(d)를 구하는 것을 특징으로 하는 얇은 산화막 두께 측정방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR94024222A 1994-09-26 1994-09-26 Thickness measuring method for thin oxidation KR0119369B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR94024222A KR0119369B1 (en) 1994-09-26 1994-09-26 Thickness measuring method for thin oxidation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94024222A KR0119369B1 (en) 1994-09-26 1994-09-26 Thickness measuring method for thin oxidation

Publications (2)

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KR960011385A true KR960011385A (ko) 1996-04-20
KR0119369B1 KR0119369B1 (en) 1997-09-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR94024222A KR0119369B1 (en) 1994-09-26 1994-09-26 Thickness measuring method for thin oxidation

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113514021A (zh) * 2021-06-10 2021-10-19 中国空气动力研究与发展中心计算空气动力研究所 一种复合材料质量损失和氧化层厚度的评估方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113514021A (zh) * 2021-06-10 2021-10-19 中国空气动力研究与发展中心计算空气动力研究所 一种复合材料质量损失和氧化层厚度的评估方法
CN113514021B (zh) * 2021-06-10 2023-08-11 中国空气动力研究与发展中心计算空气动力研究所 一种复合材料质量损失和氧化层厚度的评估方法

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