KR0119369B1 - Thickness measuring method for thin oxidation - Google Patents
Thickness measuring method for thin oxidationInfo
- Publication number
- KR0119369B1 KR0119369B1 KR94024222A KR19940024222A KR0119369B1 KR 0119369 B1 KR0119369 B1 KR 0119369B1 KR 94024222 A KR94024222 A KR 94024222A KR 19940024222 A KR19940024222 A KR 19940024222A KR 0119369 B1 KR0119369 B1 KR 0119369B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- calculating
- intensity
- measuring method
- thickness measuring
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The method is for measuring the thickness of a thin oxide film using X-ray photoelectron spectroscopy. The method comprises the steps of: obtaining distribution curves of SiO2, SiO, SiC by radiating X-ray onto the surface of an oxide film using X-ray photoelectron spectroscopy and by measuring the photoelectron emitting from the surface of the oxide film; calculating the intensity of the oxide film by integrating the distribution curves of SiO2 and SiO, and calculating the intensity of a sililated photoresist film on the bottom of the oxide film by integrating the distribution curve of SiC; and calculating the thickness of the oxide film using lnR/K+1 = d/( Osin ) where R is the ratio of the intensity of the oxide film and that of the photoresist film and O= 2.7 nm, K = 2.7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR94024222A KR0119369B1 (en) | 1994-09-26 | 1994-09-26 | Thickness measuring method for thin oxidation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR94024222A KR0119369B1 (en) | 1994-09-26 | 1994-09-26 | Thickness measuring method for thin oxidation |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960011385A KR960011385A (en) | 1996-04-20 |
KR0119369B1 true KR0119369B1 (en) | 1997-09-30 |
Family
ID=19393511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR94024222A KR0119369B1 (en) | 1994-09-26 | 1994-09-26 | Thickness measuring method for thin oxidation |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0119369B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113514021B (en) * | 2021-06-10 | 2023-08-11 | 中国空气动力研究与发展中心计算空气动力研究所 | Method for evaluating quality loss and oxide layer thickness of composite material |
-
1994
- 1994-09-26 KR KR94024222A patent/KR0119369B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR960011385A (en) | 1996-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090624 Year of fee payment: 13 |
|
LAPS | Lapse due to unpaid annual fee |