KR960010898A - Ito 투명도전막의 제작방법 - Google Patents

Ito 투명도전막의 제작방법 Download PDF

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Publication number
KR960010898A
KR960010898A KR1019950021523A KR19950021523A KR960010898A KR 960010898 A KR960010898 A KR 960010898A KR 1019950021523 A KR1019950021523 A KR 1019950021523A KR 19950021523 A KR19950021523 A KR 19950021523A KR 960010898 A KR960010898 A KR 960010898A
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South Korea
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transparent conductive
conductive film
ito transparent
oxygen
manufacturing
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KR1019950021523A
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KR100189218B1 (ko
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게이지 이시바시
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니시히라 슌지
아네루바 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

연속적으로 스패터에 의해 계속하여 다수매의 기판상에 ITO 투명도전막을 성막하는 경우에 타겟의 라이프엔드에 이르기까지 소정범위내의 비저항을 갖는 ITO 투명도전막을 제작하여, 단일 기판상에의 성막으로 막두께가 두껍게 되어도 소정범위내에 수납하는 비저항치를 갖는 ITO 투명도전막을 제작한다.
In과 Sn의 산화물의 혼합체를 타겟으로서 사용하여, 회가스와 산소를 도입하여 이룬 분위기 중에서 스패터법에 의해 In과 O를 기본적으로 구성원소로 하여 Sn을 도너로서 첨가한 ITO 투명도전막 제작방법이며, 기판상에 ITO 투명도전막을 형성하는 제1공정(11)과 제1공정을 중단하고 제1공정 보다도 산소분압이 높은 상태에서 방전을 행하여 타겟의 결핍산소를 보상하는 제2공정(12)으로 이루어지고, 제1공정과 제2공정을 교호로 반복한다.

Description

ITO 투명도전막의 제작방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 막제작방법으로 제작한 ITO 투명도전막(透明導電膜)에 있어서 적산전력에 대한 막의 비저항(比抵抗)의 변화를 표시한 그래프.

Claims (6)

  1. In 및 Sn의 산화물의 혼합체를 타겟으로서 사용하여 회가스와 산소를 도입하여 만들어지는 분위기중에서 스패터법에 의해, In과 O를 기본적 구성원소로 하여 Sn을 도너로서 첨가한 ITO 투명도전막을 제작하는 방법에 있어서, 기판상에 상기 ITO 투명도전막을 형성하는 제1의 공정과 상기 제1공정을 중단하고 상기 제1의 공정보다도 산소분압이 높은 상태에서 방전을 행하여 상기 타겟의 결핍산소를 보상하는 제2의 공정을 포함하여, 상기 제1의 공정과 상기 제2의 공정을 교호로 반복하는 것을 특징으로 하는 ITO 투명도전막의 제작방법.
  2. 제1항에 있어서, 상기 제1공정에 의하여 계속하여 복수의 기판의 각각에 상기 ITO 투명도전막을 형성하여, 그후 상기 제2공정을 행하는 것을 특징으로 하는 ITO 투명도전막의 제작방법.
  3. 제1항에 있어서, 1매의 기판에 대하여 상기 제1의 공정과 상기 제2의 공정을 교호로 반복하는 것을 특징으로 하는 ITO 투명도전막의 제작방법.
  4. 제1항 내지 제3항중 어느 한 항에 있어서, 상기 제2공정에 있어서의 산소분압이 1×10-3Torr 이상인 것을 특징으로 하는 ITO 투명도전막의 제작방법.
  5. 제4항에 있어서, 상기 회가스의 도입을 정지하고 상기 산소만을 도입한 분위기에서 상기 제2의 공정을 행하는 것을 특징으로 하는 ITO 투명도전막의 제작방법.
  6. 제1항 내지 제5항중 어느 한 항에 있어서, 상기 ITO 투명도전막의 비저항이 설정치 보다 낮게 된때 상기 제1의 공정을 중단하고 상기 제2의 공정으로 이행하여, 이 제2공정을 소정의 시간 행한 후, 다시 상기 제1공정을 개시하여, 그후 동일하게 하여 상기 제1공정과 상기 제2공정을 교호로 반복하는 것을 특징으로 하는 ITO 투명도전막의 제작방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950021523A 1994-09-09 1995-07-21 Ito 투명도전막의 제작방법 KR100189218B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-242202 1994-09-09
JP6242202A JPH0874034A (ja) 1994-09-09 1994-09-09 Ｉｔｏ透明導電膜の作製方法

Publications (2)

Publication Number Publication Date
KR960010898A true KR960010898A (ko) 1996-04-20
KR100189218B1 KR100189218B1 (ko) 1999-06-01

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US (1) US6425990B1 (ko)
JP (1) JPH0874034A (ko)
KR (1) KR100189218B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002071414A1 (fr) * 2001-03-07 2002-09-12 Ueyama Electric Co., Ltd. Film conducteur transparent depose sur un substrat et procede de fabrication d'un filtre colore
US20080233291A1 (en) * 2007-03-23 2008-09-25 Chandrasekaran Casey K Method for depositing an inorganic layer to a thermal transfer layer
US9862640B2 (en) 2010-01-16 2018-01-09 Cardinal Cg Company Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US11155493B2 (en) 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
US8658262B2 (en) 2010-01-16 2014-02-25 Cardinal Cg Company High quality emission control coatings, emission control glazings, and production methods
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
CN104651796B (zh) * 2013-11-19 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 Ito薄膜的电阻调节方法
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same

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Publication number Priority date Publication date Assignee Title
US4094763A (en) * 1970-07-31 1978-06-13 Ppg Industries, Inc. Sputter coating of glass with an oxide of a metal having an atomic number between 48 and 51 and mixtures thereof
US4349425A (en) * 1977-09-09 1982-09-14 Hitachi, Ltd. Transparent conductive films and methods of producing same
NL8401721A (nl) * 1984-05-29 1985-12-16 Leer Koninklijke Emballage Werkwijze en stelsel voor het produceren van een reactief gesputterde geleidende transparante metaaloxidefilm op een doorlopende materiaalbaan.
US4842705A (en) * 1987-06-04 1989-06-27 Siemens Aktiengesellschaft Method for manufacturing transparent conductive indium-tin oxide layers
DE68909618T2 (de) * 1988-01-09 1994-05-05 Sumitomo Bakelite Co Verfahren zur Herstellung eines mit einer Dünnschicht aus Metalloxid überzogenen durchsichtigen leitenden Films.
JPH01268859A (ja) * 1988-04-20 1989-10-26 Casio Comput Co Ltd 透明導電膜の形成方法および形成装置
JPH0751746B2 (ja) 1988-08-05 1995-06-05 松下電器産業株式会社 酸化物薄膜製造法

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KR100189218B1 (ko) 1999-06-01
US6425990B1 (en) 2002-07-30
JPH0874034A (ja) 1996-03-19

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