KR960004101B1 - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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Publication number
KR960004101B1
KR960004101B1 KR91014502A KR910014502A KR960004101B1 KR 960004101 B1 KR960004101 B1 KR 960004101B1 KR 91014502 A KR91014502 A KR 91014502A KR 910014502 A KR910014502 A KR 910014502A KR 960004101 B1 KR960004101 B1 KR 960004101B1
Authority
KR
South Korea
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Application number
KR91014502A
Other languages
English (en)
Inventor
Hideaki Kinoshita
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Application granted granted Critical
Publication of KR960004101B1 publication Critical patent/KR960004101B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR91014502A 1990-08-23 1991-08-22 Semiconductor laser device KR960004101B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2219952A JP2624881B2 (ja) 1990-08-23 1990-08-23 半導体レーザ素子およびその製造方法

Publications (1)

Publication Number Publication Date
KR960004101B1 true KR960004101B1 (en) 1996-03-26

Family

ID=16743614

Family Applications (1)

Application Number Title Priority Date Filing Date
KR91014502A KR960004101B1 (en) 1990-08-23 1991-08-22 Semiconductor laser device

Country Status (5)

Country Link
US (1) US5119387A (ko)
EP (1) EP0472212B1 (ko)
JP (1) JP2624881B2 (ko)
KR (1) KR960004101B1 (ko)
DE (1) DE69107260T2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3115775B2 (ja) * 1994-11-16 2000-12-11 三菱電機株式会社 半導体レーザの製造方法
DE10061701A1 (de) 2000-12-12 2002-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser mit lateraler Stromführung und Verfahren zu dessen Herstellung
JP4136988B2 (ja) * 2004-03-31 2008-08-20 松下電器産業株式会社 半導体レーザ装置
JP2008022043A (ja) * 2007-10-10 2008-01-31 Matsushita Electric Ind Co Ltd 半導体レーザ装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799228A (en) * 1985-08-23 1989-01-17 Kabushiki Kaisha Toshiba Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide
JPS62173792A (ja) * 1986-01-21 1987-07-30 ゼロツクス　コ−ポレ−シヨン 半導体構造体及びその半導体領域変換方法
JPS6348888A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp 半導体レ−ザ装置
JPH0680864B2 (ja) * 1987-01-06 1994-10-12 株式会社フジクラ 半導体レ−ザ
JPS6482590A (en) * 1987-09-24 1989-03-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH07101768B2 (ja) * 1988-11-09 1995-11-01 三菱電機株式会社 半導体レーザ装置及びその製造方法
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
JPH0828498B2 (ja) * 1989-10-02 1996-03-21 株式会社東芝 半導体素子とその製造方法
JPH03127891A (ja) * 1989-10-13 1991-05-30 Mitsubishi Electric Corp 半導体レーザ装置

Also Published As

Publication number Publication date
US5119387A (en) 1992-06-02
DE69107260T2 (de) 1995-07-20
EP0472212A2 (en) 1992-02-26
JPH04103184A (ja) 1992-04-06
EP0472212A3 (en) 1992-09-02
DE69107260D1 (de) 1995-03-23
EP0472212B1 (en) 1995-02-08
JP2624881B2 (ja) 1997-06-25

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E902 Notification of reason for refusal
E902 Notification of reason for refusal
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E701 Decision to grant or registration of patent right
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Payment date: 20080227

Year of fee payment: 13

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