KR960002667A - Multi-layer metal film formation method - Google Patents

Multi-layer metal film formation method Download PDF

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Publication number
KR960002667A
KR960002667A KR1019940013044A KR19940013044A KR960002667A KR 960002667 A KR960002667 A KR 960002667A KR 1019940013044 A KR1019940013044 A KR 1019940013044A KR 19940013044 A KR19940013044 A KR 19940013044A KR 960002667 A KR960002667 A KR 960002667A
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KR
South Korea
Prior art keywords
film
metal film
reflection film
forming
reflection
Prior art date
Application number
KR1019940013044A
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Korean (ko)
Inventor
홍상기
오세준
손기근
고재완
구영모
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940013044A priority Critical patent/KR960002667A/en
Publication of KR960002667A publication Critical patent/KR960002667A/en

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Abstract

본 발명은 반도체 제조공정 중 금속막 측면의 수분침투로 인한 손상을 방지하는 다층구조 금속막 형성방법에 관한 것을, 금속막(11) 상부에 반사방지막(12)을 형성한 다음, 상기 반사방지막(12), 금속막(11)을 차례로 선택식각하는 단계; 전체구조 상부에 다시 소정두께의 반사방지막(122)을 형성하는 단계; 상기 금속막(11)의 측면 및 상부에 반사방지막(12)을 형성하는 단계; 상기 금속막(11)의 측면 및 상부에 반사방지막(12)이 남도록 상기 반사방지막(122)을 식각하는 단계; 전체구조 상부에 IMO막(13), SOG막(14)을 형성하는 단계를 포함하여 이루어짐으로써 본 발명은 반사방지막이 금속막의 측면에도 존재하도록 함으로써 비에치백 방식의 다층구조 금속막 제조 공정에 적용할 경우 수분침투로 인한 금속막의 특성저하를 방지하여, 고 신뢰성의 반사방지막 소자를 제조할 수 있다.The present invention relates to a method for forming a multilayer structure metal film that prevents damage due to moisture penetration of a metal film side during a semiconductor manufacturing process. The anti-reflection film 12 is formed on the metal film 11 and then the anti-reflection film ( 12) sequentially etching the metal film 11; Forming an anti-reflection film 122 having a predetermined thickness on the entire structure again; Forming an anti-reflection film (12) on side and top of the metal film (11); Etching the anti-reflection film 122 so that the anti-reflection film 12 remains on the side and top of the metal film 11; Including the step of forming the IMO film 13, SOG film 14 on the entire structure, the present invention is applied to the non-etch-back multi-layer metal film manufacturing process by having the anti-reflection film also exists on the side of the metal film In this case, the anti-reflection film element having high reliability can be manufactured by preventing the deterioration of the characteristics of the metal film due to moisture penetration.

Description

다층구조 금속막 형성방법Multi-layer metal film formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래방법에 따라 형성된 이층구조 금속막의 단면도,1 is a cross-sectional view of a two-layer metal film formed according to a conventional method,

제2도는 본 발명에 따른 일실시예의 이층구조 금속막 형성 공정 단면도.Figure 2 is a cross-sectional view of a two-layer metal film forming process of one embodiment according to the present invention.

Claims (2)

반도체 제조공정 중 금속막 측면의 수분침투로 인한 손상을 방지하는 다층구조 금속막 형성방법에 있어서, 금속막(11) 상부에 반사방지막(12)을 형성한 다음, 상기 반사방지막(12), 금속막(11)을 차례로 선택식각하는 단계; 전체구조 상부에 다시 소정두께의 반사방지막(122)을 형성하는 단계; 상기 금속막(11)의 측면 및 상부에 반사방지막(12)이 남도록 상기 반사방지막(122)을 식각하는 단계; 전체구조 상부에 IMO막(13), SOG막(14)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 다층구조 금속막 형성방법.In the method of forming a multi-layered metal film to prevent damage due to moisture penetration of the metal film side during the semiconductor manufacturing process, the anti-reflection film 12 is formed on the metal film 11, and then the anti-reflection film 12 and the metal Selectively etching the membrane 11; Forming an anti-reflection film 122 having a predetermined thickness on the entire structure again; Etching the anti-reflection film 122 so that the anti-reflection film 12 remains on the side and top of the metal film 11; Forming an IMO film (13) and an SOG film (14) on top of the entire structure. 제1항에 있어서, 상기 반사방지막(12,122)은 TiN막, Ti막, 또는 TiN/Ti막 중 어느 하나로 이루어지는 것을 특징으로 하는 다층구조 금속막 형성방법.The method of claim 1, wherein the anti-reflection film (12,122) is made of any one of a TiN film, a Ti film, or a TiN / Ti film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940013044A 1994-06-09 1994-06-09 Multi-layer metal film formation method KR960002667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940013044A KR960002667A (en) 1994-06-09 1994-06-09 Multi-layer metal film formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940013044A KR960002667A (en) 1994-06-09 1994-06-09 Multi-layer metal film formation method

Publications (1)

Publication Number Publication Date
KR960002667A true KR960002667A (en) 1996-01-26

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KR1019940013044A KR960002667A (en) 1994-06-09 1994-06-09 Multi-layer metal film formation method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100517910B1 (en) * 1996-06-25 2005-11-25 주식회사 하이닉스반도체 Metal wiring structure of semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100517910B1 (en) * 1996-06-25 2005-11-25 주식회사 하이닉스반도체 Metal wiring structure of semiconductor device and manufacturing method thereof

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