KR960002667A - Multi-layer metal film formation method - Google Patents
Multi-layer metal film formation method Download PDFInfo
- Publication number
- KR960002667A KR960002667A KR1019940013044A KR19940013044A KR960002667A KR 960002667 A KR960002667 A KR 960002667A KR 1019940013044 A KR1019940013044 A KR 1019940013044A KR 19940013044 A KR19940013044 A KR 19940013044A KR 960002667 A KR960002667 A KR 960002667A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- metal film
- reflection film
- forming
- reflection
- Prior art date
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 발명은 반도체 제조공정 중 금속막 측면의 수분침투로 인한 손상을 방지하는 다층구조 금속막 형성방법에 관한 것을, 금속막(11) 상부에 반사방지막(12)을 형성한 다음, 상기 반사방지막(12), 금속막(11)을 차례로 선택식각하는 단계; 전체구조 상부에 다시 소정두께의 반사방지막(122)을 형성하는 단계; 상기 금속막(11)의 측면 및 상부에 반사방지막(12)을 형성하는 단계; 상기 금속막(11)의 측면 및 상부에 반사방지막(12)이 남도록 상기 반사방지막(122)을 식각하는 단계; 전체구조 상부에 IMO막(13), SOG막(14)을 형성하는 단계를 포함하여 이루어짐으로써 본 발명은 반사방지막이 금속막의 측면에도 존재하도록 함으로써 비에치백 방식의 다층구조 금속막 제조 공정에 적용할 경우 수분침투로 인한 금속막의 특성저하를 방지하여, 고 신뢰성의 반사방지막 소자를 제조할 수 있다.The present invention relates to a method for forming a multilayer structure metal film that prevents damage due to moisture penetration of a metal film side during a semiconductor manufacturing process. The anti-reflection film 12 is formed on the metal film 11 and then the anti-reflection film ( 12) sequentially etching the metal film 11; Forming an anti-reflection film 122 having a predetermined thickness on the entire structure again; Forming an anti-reflection film (12) on side and top of the metal film (11); Etching the anti-reflection film 122 so that the anti-reflection film 12 remains on the side and top of the metal film 11; Including the step of forming the IMO film 13, SOG film 14 on the entire structure, the present invention is applied to the non-etch-back multi-layer metal film manufacturing process by having the anti-reflection film also exists on the side of the metal film In this case, the anti-reflection film element having high reliability can be manufactured by preventing the deterioration of the characteristics of the metal film due to moisture penetration.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 종래방법에 따라 형성된 이층구조 금속막의 단면도,1 is a cross-sectional view of a two-layer metal film formed according to a conventional method,
제2도는 본 발명에 따른 일실시예의 이층구조 금속막 형성 공정 단면도.Figure 2 is a cross-sectional view of a two-layer metal film forming process of one embodiment according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940013044A KR960002667A (en) | 1994-06-09 | 1994-06-09 | Multi-layer metal film formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940013044A KR960002667A (en) | 1994-06-09 | 1994-06-09 | Multi-layer metal film formation method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960002667A true KR960002667A (en) | 1996-01-26 |
Family
ID=66685674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940013044A KR960002667A (en) | 1994-06-09 | 1994-06-09 | Multi-layer metal film formation method |
Country Status (1)
Country | Link |
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KR (1) | KR960002667A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100517910B1 (en) * | 1996-06-25 | 2005-11-25 | 주식회사 하이닉스반도체 | Metal wiring structure of semiconductor device and manufacturing method thereof |
-
1994
- 1994-06-09 KR KR1019940013044A patent/KR960002667A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100517910B1 (en) * | 1996-06-25 | 2005-11-25 | 주식회사 하이닉스반도체 | Metal wiring structure of semiconductor device and manufacturing method thereof |
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