KR920015509A - Multi-layered thin film structure of metal wiring - Google Patents

Multi-layered thin film structure of metal wiring Download PDF

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Publication number
KR920015509A
KR920015509A KR1019910000573A KR910000573A KR920015509A KR 920015509 A KR920015509 A KR 920015509A KR 1019910000573 A KR1019910000573 A KR 1019910000573A KR 910000573 A KR910000573 A KR 910000573A KR 920015509 A KR920015509 A KR 920015509A
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KR
South Korea
Prior art keywords
metal wiring
thin film
film structure
film
layered thin
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Application number
KR1019910000573A
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Korean (ko)
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KR100205437B1 (en
Inventor
곽병호
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019910000573A priority Critical patent/KR100205437B1/en
Publication of KR920015509A publication Critical patent/KR920015509A/en
Application granted granted Critical
Publication of KR100205437B1 publication Critical patent/KR100205437B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음No content

Description

금속배선의 다층 박막 구조Multi-layered thin film structure of metal wiring

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 금속배선의 구조단면도.3 is a structural cross-sectional view of a metal wiring according to the present invention.

Claims (2)

반도체 제조에 있어서, 도전막을 알루미늄막과 알루미늄 산화막으로 이루어진 다층 구조로 형성함을 특징으로 하는 금속배선의 다층박막구조.In the semiconductor manufacturing, the multilayer thin film structure of the metal wiring, characterized in that the conductive film is formed in a multilayer structure consisting of an aluminum film and an aluminum oxide film. 제1항에 있어서, 알루미늄막의 상층에 형성되는 알루미늄 산화막의 두께는 약 1000A - 5000A의 범위의 것으로 하고 알루미늄막의 하층에 형성되는 알루미늄 산화막의 두께는 약500A 이상의 것으로 한것을 특징으로 하는 금속배선의 다층박막구조.2. The multilayer of metal wiring according to claim 1, wherein the thickness of the aluminum oxide film formed on the upper layer of the aluminum film is in the range of about 1000A-5000A and the thickness of the aluminum oxide film formed on the lower layer of the aluminum film is about 500A or more. Thin film structure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000573A 1991-01-15 1991-01-15 Multilayer thin film structure of metal interconnection KR100205437B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000573A KR100205437B1 (en) 1991-01-15 1991-01-15 Multilayer thin film structure of metal interconnection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000573A KR100205437B1 (en) 1991-01-15 1991-01-15 Multilayer thin film structure of metal interconnection

Publications (2)

Publication Number Publication Date
KR920015509A true KR920015509A (en) 1992-08-27
KR100205437B1 KR100205437B1 (en) 1999-07-01

Family

ID=19309843

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000573A KR100205437B1 (en) 1991-01-15 1991-01-15 Multilayer thin film structure of metal interconnection

Country Status (1)

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KR (1) KR100205437B1 (en)

Also Published As

Publication number Publication date
KR100205437B1 (en) 1999-07-01

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