KR970053536A - Metal wiring of semiconductor device - Google Patents
Metal wiring of semiconductor device Download PDFInfo
- Publication number
- KR970053536A KR970053536A KR1019950054643A KR19950054643A KR970053536A KR 970053536 A KR970053536 A KR 970053536A KR 1019950054643 A KR1019950054643 A KR 1019950054643A KR 19950054643 A KR19950054643 A KR 19950054643A KR 970053536 A KR970053536 A KR 970053536A
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- KR
- South Korea
- Prior art keywords
- film
- metal wiring
- metal
- layer
- semiconductor device
- Prior art date
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Abstract
본 발명은 반도체 확산방지막, 금속배선막, 반사방지막이 순차적으로 적층된 삼층구조의 금속배선을 제공하는 것을 목적으로 한다.An object of the present invention is to provide a three-layer metal wiring in which a semiconductor diffusion barrier film, a metal wiring film, and an antireflection film are sequentially stacked.
이와 같은 목적을 달성하기 위한 반도체 소자의 금속배선은 하부 절연층으로의 금속배선원자의 확산을 방지하기 위한 확산방지막과 상기 확산방지막 위의 중간 금속막과, 상기 중간 금속막 위에서 금속배선막의 패턴 형성을 위하여 도포된 감광막의 노광시 상기 중간 금속막에서의 빛의 반사를 방지하기 위한 반사 방지막의 삼층구조로 이루어진 금속배선에 있어서, 상기 중간 금속막이 알루미늄과 스칸듐의 합금으로 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선.In order to achieve the above object, the metal wiring of the semiconductor device may include a diffusion barrier layer for preventing diffusion of metal wiring atoms into a lower insulating layer, an intermediate metal layer on the diffusion barrier layer, and a pattern of a metal interconnection layer on the intermediate metal layer. In the metal wiring consisting of a three-layer structure of the antireflection film for preventing the reflection of light in the intermediate metal film during exposure of the photosensitive film applied for the purpose, the semiconductor device, characterized in that the intermediate metal film is made of an alloy of aluminum and scandium Metal wiring.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 실시예에 따른 금속배선의 형성방법을 설명하기 위한 공정 흐름도이다.2 is a flowchart illustrating a method of forming a metal wiring according to an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950054643A KR970053536A (en) | 1995-12-22 | 1995-12-22 | Metal wiring of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950054643A KR970053536A (en) | 1995-12-22 | 1995-12-22 | Metal wiring of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970053536A true KR970053536A (en) | 1997-07-31 |
Family
ID=66617550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950054643A KR970053536A (en) | 1995-12-22 | 1995-12-22 | Metal wiring of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970053536A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020011122A (en) * | 2000-07-31 | 2002-02-07 | 가네꼬 히사시 | Semiconductor device and manufacturing process |
-
1995
- 1995-12-22 KR KR1019950054643A patent/KR970053536A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020011122A (en) * | 2000-07-31 | 2002-02-07 | 가네꼬 히사시 | Semiconductor device and manufacturing process |
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