KR960002655A - Semiconductor manufacturing method - Google Patents

Semiconductor manufacturing method Download PDF

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Publication number
KR960002655A
KR960002655A KR1019940012906A KR19940012906A KR960002655A KR 960002655 A KR960002655 A KR 960002655A KR 1019940012906 A KR1019940012906 A KR 1019940012906A KR 19940012906 A KR19940012906 A KR 19940012906A KR 960002655 A KR960002655 A KR 960002655A
Authority
KR
South Korea
Prior art keywords
insulating film
semiconductor manufacturing
planarizing
etching
present
Prior art date
Application number
KR1019940012906A
Other languages
Korean (ko)
Inventor
백현철
백인혁
김상익
구영모
김세정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940012906A priority Critical patent/KR960002655A/en
Publication of KR960002655A publication Critical patent/KR960002655A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 토포로지를 갖는 절연막을 식각하여 서로 다른 단차를 갖는 예정된 부위를 오픈 시키는 공정과 상기 절연막을 평탄화시키는 공정이 병행되는 반도체 제조 방법에 있어서; 예정된 부위의 절연막을 제거하는 단계를 실시한 이후에 절연막을 평탄화 시키는 것을 특징으로 하는 반도체 제조 방법에 관한 것으로, 절연막 식각시 하부 증착막의 손상을 방지하는 등 소자의 신뢰도 및 제조 수율을 향상 시키는 효과가 있다.The present invention relates to a semiconductor manufacturing method comprising etching a insulating film having a topology and opening predetermined portions having different steps, and flattening the insulating film; The present invention relates to a semiconductor manufacturing method comprising the step of planarizing an insulating film after the step of removing the insulating film of a predetermined portion, and the effect of improving the reliability and manufacturing yield of the device, such as preventing damage to the lower deposition film during etching of the insulating film. .

Description

반도체 제조 방법Semiconductor manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2D도는 본 발명의 일실시예에 따른 비아홀 형성 공정도.2D is a process diagram for forming a via hole according to an embodiment of the present invention.

Claims (1)

토포로지를 갖는 절연막을 식각하여 서로 다른 단차를 갖는 예정된 부위를 오픈 시키는 공정과 상기 절연막을 평탄화시키는 공정이 병행되는 반도체 제조 방법에 있어서; 예정된 부위의 절연막을 제거하는 단계를 실시한 이후에 절연막을 평탄화 시키는 것을 특징으로 하는 반도체 제조 방법.A semiconductor manufacturing method comprising: etching an insulating film having a topology and opening predetermined portions having different steps; and planarizing the insulating film; And planarizing the insulating film after performing the step of removing the insulating film of the predetermined site. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940012906A 1994-06-08 1994-06-08 Semiconductor manufacturing method KR960002655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940012906A KR960002655A (en) 1994-06-08 1994-06-08 Semiconductor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940012906A KR960002655A (en) 1994-06-08 1994-06-08 Semiconductor manufacturing method

Publications (1)

Publication Number Publication Date
KR960002655A true KR960002655A (en) 1996-01-26

Family

ID=66685618

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940012906A KR960002655A (en) 1994-06-08 1994-06-08 Semiconductor manufacturing method

Country Status (1)

Country Link
KR (1) KR960002655A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100462538B1 (en) * 2002-11-14 2004-12-17 주식회사 유상실업 Crease Dyeing Finishing of Fabric

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100462538B1 (en) * 2002-11-14 2004-12-17 주식회사 유상실업 Crease Dyeing Finishing of Fabric

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