KR960001341B1 - Method for making semiconductor memory device - Google Patents
Method for making semiconductor memory device Download PDFInfo
- Publication number
- KR960001341B1 KR960001341B1 KR91014836A KR910014836A KR960001341B1 KR 960001341 B1 KR960001341 B1 KR 960001341B1 KR 91014836 A KR91014836 A KR 91014836A KR 910014836 A KR910014836 A KR 910014836A KR 960001341 B1 KR960001341 B1 KR 960001341B1
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- semiconductor memory
- making semiconductor
- making
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
- H10B20/383—Channel doping programmed
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2225835A JP2530054B2 (ja) | 1990-08-28 | 1990-08-28 | 半導体記憶装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960001341B1 true KR960001341B1 (en) | 1996-01-26 |
Family
ID=16835564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR91014836A KR960001341B1 (en) | 1990-08-28 | 1991-08-27 | Method for making semiconductor memory device |
Country Status (3)
Country | Link |
---|---|
US (1) | US5169797A (ko) |
JP (1) | JP2530054B2 (ko) |
KR (1) | KR960001341B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07273224A (ja) * | 1994-03-29 | 1995-10-20 | Sharp Corp | 半導体装置の製造方法 |
US7321161B2 (en) * | 2003-12-19 | 2008-01-22 | Philips Lumileds Lighting Company, Llc | LED package assembly with datum reference feature |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4282646A (en) * | 1979-08-20 | 1981-08-11 | International Business Machines Corporation | Method of making a transistor array |
US4295209A (en) * | 1979-11-28 | 1981-10-13 | General Motors Corporation | Programming an IGFET read-only-memory |
US4364167A (en) * | 1979-11-28 | 1982-12-21 | General Motors Corporation | Programming an IGFET read-only-memory |
US4364165A (en) * | 1981-05-28 | 1982-12-21 | General Motors Corporation | Late programming using a silicon nitride interlayer |
JPS58148448A (ja) * | 1982-03-01 | 1983-09-03 | Nippon Denso Co Ltd | 半導体romの製造方法 |
JPS5952867A (ja) * | 1982-09-20 | 1984-03-27 | Ricoh Co Ltd | 絶縁層に識別記号を刻設した半導体装置及びその製造方法 |
-
1990
- 1990-08-28 JP JP2225835A patent/JP2530054B2/ja not_active Expired - Fee Related
-
1991
- 1991-08-27 KR KR91014836A patent/KR960001341B1/ko not_active IP Right Cessation
- 1991-08-28 US US07/750,586 patent/US5169797A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04107861A (ja) | 1992-04-09 |
US5169797A (en) | 1992-12-08 |
JP2530054B2 (ja) | 1996-09-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20021231 Year of fee payment: 8 |
|
LAPS | Lapse due to unpaid annual fee |