KR960000381B1 - Manufacturing method of field oxide of semiconductor device - Google Patents
Manufacturing method of field oxide of semiconductor device Download PDFInfo
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- KR960000381B1 KR960000381B1 KR1019920009870A KR920009870A KR960000381B1 KR 960000381 B1 KR960000381 B1 KR 960000381B1 KR 1019920009870 A KR1019920009870 A KR 1019920009870A KR 920009870 A KR920009870 A KR 920009870A KR 960000381 B1 KR960000381 B1 KR 960000381B1
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- oxide film
- nitride film
- forming
- field oxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- Condensed Matter Physics & Semiconductors (AREA)
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- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
Description
제1a도 및 제1b도는 종래의 기술로 필드산화막을 형성할 때 버즈 비크(Bird's Beak)가 발생되는 것을 도시한 단면도.1A and 1B are cross-sectional views showing that a bird's beak is generated when forming a field oxide film by a conventional technique.
제2a도 내지 제2e도는 본 발명에 의해 필드산화막을 형성하는 단계를 도시한 단면도.2a to 2e are sectional views showing the step of forming a field oxide film according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 반도체 기판 2,13 : 필드산화막1: semiconductor substrate 2,13: field oxide film
3 : 산화막패턴 5 : 질화막패턴3: oxide film pattern 5: nitride film pattern
7 : 질화막스페이서 19 : 산소이온주입영역7 nitride film spacer 19 oxygen ion implantation region
본 발명은 반도체소자의 필드산화막 형성방법에 관한 것이며, 특히, 필드산화막 마스크용 산화막 및 질화막패턴의 측벽에 질화막스페이서를 형성하고 반도체기판의 소정영역에 산소원자를 이온주입시키고, 노출된 반도체기판을 산화시켜 필드산화막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a method for forming a field oxide film of a semiconductor device. In particular, a nitride film spacer is formed on sidewalls of an oxide film and a nitride film pattern for a field oxide film mask, ion implanted oxygen atoms in a predetermined region of the semiconductor substrate, and an exposed semiconductor substrate is provided. It relates to a method of forming a field oxide film by oxidation.
일반적으로 반도체소자와 소자를 격리시키기 위하여 LOCOS(local oxidation of silicon)공정으로 필드산화막을 형성하였다. 이와 같이 종래기술로 필드산화막을 형성하는 방법을 도시된 도면을 참고하여 설명하면 제1a도에 도시된 바와같이, 반도체기판(1) 상부에 완충용 산화막과 질화막을 순차적으로 형성한 후, 포토리소그라피 공정으로 완충용 산화막패턴(3)과 질화막패턴(5)을 형성한 다음, 채널스톱 임플란트를 노출된 반도체기판(1)으로 이온주입하여 이온주입영역(9)을 형성한다. 상기 공정이 완료된 후, 제1b도에 도시된 바와 같이, 산화공정을 통해 노출된 반도체기판(1)을 산화시켜 필드산화막(2)을 형성한다. 이때 상기 필드산화막(2)의 하부에 채널스톱 임플란트영역 (10)이 형성된다.In general, a field oxide film is formed by a local oxidation of silicon (LOCOS) process in order to isolate a semiconductor device from the device. As described with reference to the accompanying drawings, a method of forming a field oxide film according to the related art, as shown in FIG. 1A, after sequentially forming a buffer oxide film and a nitride film on the semiconductor substrate 1 and then performing photolithography After the buffer oxide pattern 3 and the nitride film pattern 5 are formed in the process, the channel stop implant is implanted into the exposed semiconductor substrate 1 to form the ion implantation region 9. After the above process is completed, as shown in FIG. 1B, the semiconductor substrate 1 exposed through the oxidation process is oxidized to form the field oxide film 2. In this case, a channel stop implant region 10 is formed under the field oxide layer 2.
그러나, 상기와 같이 종래기술로 필드산화막(2)을 형성하는 경우에 상기 필드산화막(2)의 양단부에 버즈비크(Bird's Beak)(6)가 발생되어 반도체소자의 액티브영역이 감소되며, 그로 인하여 칩면적이 증대되는 요인이 되고 있다.However, in the case of forming the field oxide film 2 according to the related art as described above, a bird's beak 6 is generated at both ends of the field oxide film 2, thereby reducing the active area of the semiconductor device. The chip area is increasing.
따라서, 본 발명은 상술한 문제점을 해결하기 위해, LOCOS 방법으로 필드산화막을 형성하되, 마스크로 사용되는 산화막과 질화막패턴의 측벽에 질화막스페이서를 형성하고, 산소원자를 노출된 반도체기판에 이온주입하여 산소이온주입영역을 형성하고, 산화공정으로 상기 산소이온주입영역을 산화시켜 필드산화막을 제조하는 방법을 제공하는데 그 목적이 있다.Accordingly, in order to solve the above problems, the present invention forms a field oxide film by the LOCOS method, forms a nitride film spacer on the sidewalls of the oxide film and the nitride film pattern used as a mask, and implants oxygen atoms into the exposed semiconductor substrate. An object of the present invention is to provide a method for forming a field oxide film by forming an oxygen ion implantation region and oxidizing the oxygen ion implantation region by an oxidation process.
이하, 첨부된 도면으로 본 발명을 더욱 상세하게 설명하기로 한다.Hereinafter, the present invention will be described in detail with the accompanying drawings.
제2a도 내지 2e도는 본 발명에 따른 반도체소자의 필드산화막 형성방법을 도시한 단면도이다.2A to 2E are cross-sectional views showing a method for forming a field oxide film of a semiconductor device according to the present invention.
제2a도는 공지의 기술로 반도체기판(1) 상부에 완충용 산화막, 질화막을 적충하고, 필드산화막 마스크를 이용한 식각공정으로 질화막 및 완충용 산화막을 국부적으로 건식식각하여 질화막패턴(5)과 산화막패턴(3)을 형성한 단면도이다. 여기서, 완충용 산화막은 100 내지 500Å 두께로 증착되고, 그 상부의 질화막은 1000 내지 2000Å 정도로 증착한다.FIG. 2A is a well-known technique for filling a buffer oxide film and a nitride film on an upper portion of the semiconductor substrate 1, and locally etching the nitride film and the buffer oxide film by an etching process using a field oxide mask to dry the nitride film pattern 5 and the oxide film pattern. It is sectional drawing which formed (3). Here, the buffer oxide film is deposited to a thickness of 100 to 500 kPa, and the nitride film of the upper portion is deposited to about 1000 to 2000 kPa.
제2b도는 제2a도의 공정이 완료된 후, 건식식각으로 완충용 산화막패턴(3)과 질화막패턴(5)측벽에 스페이서(7)를 형성하는 단계를 나타내는 반도체 소자의 단면도이다. 즉, 상기 공정을 상세히 살펴보면, 상기 질화막패턴(5)상부에 다시 질화막을 500 내지 2000Å두께로 증착한 다음에 건식식각공정으로 질화막을 식각하여 질화막패턴 (5) 및 완충용 산화막(3)의 측벽에 질화막스페이서(7)를 형성한다.FIG. 2B is a cross-sectional view of the semiconductor device illustrating a step of forming spacers 7 on the sidewalls of the buffer oxide film pattern 3 and the nitride film pattern 5 by dry etching after the process of FIG. 2A is completed. That is, when the process is described in detail, the nitride film is deposited on the nitride film pattern 5 again to a thickness of 500 to 2000 microns, and the nitride film is etched by a dry etching process to form sidewalls of the nitride film pattern 5 and the buffer oxide film 3. A nitride film spacer 7 is formed in the film.
제2c도는 제2b도의 공정이 완료된 후 노출된 반도체 기판(1)으로 산소원자를 이온주입하여 산소이용주입영역(19)을 형성한 단면이다.FIG. 2C is a cross section in which an oxygen atom injection region 19 is formed by ion implanting oxygen atoms into the exposed semiconductor substrate 1 after the process of FIG. 2B is completed.
제2d도는 제2c도의 공정이 완료된 후 산화공정으로 노출된 반도체기판(1)의 산소이온주입영역(19)을 산화시켜 필드산화막(13)을 형성한 단면도이다. 이때 상기 반도체기판(1) 상부쪽으로도 필드산화막(13)이 일정두께 예를들어 100 내지 1500Å정도 성장된다.FIG. 2D is a cross-sectional view of the field oxide film 13 formed by oxidizing the oxygen ion implantation region 19 of the semiconductor substrate 1 exposed by the oxidation process after the process of FIG. 2C is completed. At this time, the field oxide film 13 is also grown to a predetermined thickness, for example, about 100 to 1500 Å toward the upper portion of the semiconductor substrate 1.
제2e도는 상기 질화막패턴(5)과 질화막스페이서(7)를 인상용액에서 제거하고, 상기 완충용 산화막패턴(3)을 불산 또는 희석된 불산용액에서 제거한 단면도로서, 이때 필드산화막(13)의 일정두께도 함께 식각되어 반도체기판(1)의 표면과 높이가 동일하게 된다.FIG. 2E is a cross-sectional view of removing the nitride film pattern 5 and the nitride film spacer 7 from the impression solution and removing the buffer oxide pattern 3 from the hydrofluoric acid or diluted hydrofluoric acid solution. The thickness is also etched together so that the height and the surface of the semiconductor substrate 1 are the same.
이상에서 살펴 본 바와같이, 본 발명의 반도체소자의 필드산화막 형성방법에 따르면, 질화막스페이서의 두께를 조절함에 따라 필드산화막의 폭을 조절할 수 있을 뿐아니라, 액티브영역의 면적을 감소시키는 버즈 비크발생을 억제할 수 있는 효과가 있다.As described above, according to the method of forming the field oxide film of the semiconductor device of the present invention, the width of the field oxide film can be adjusted by controlling the thickness of the nitride film spacer, and the occurrence of buzz beak can be reduced to reduce the area of the active region. There is an effect that can be suppressed.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920009870A KR960000381B1 (en) | 1992-06-08 | 1992-06-08 | Manufacturing method of field oxide of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920009870A KR960000381B1 (en) | 1992-06-08 | 1992-06-08 | Manufacturing method of field oxide of semiconductor device |
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| Publication Number | Publication Date |
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| KR940001347A KR940001347A (en) | 1994-01-11 |
| KR960000381B1 true KR960000381B1 (en) | 1996-01-05 |
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| KR1019920009870A KR960000381B1 (en) | 1992-06-08 | 1992-06-08 | Manufacturing method of field oxide of semiconductor device |
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