KR950034652A - An electrostatic chuck - Google Patents

An electrostatic chuck Download PDF

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Publication number
KR950034652A
KR950034652A KR1019950001027A KR19950001027A KR950034652A KR 950034652 A KR950034652 A KR 950034652A KR 1019950001027 A KR1019950001027 A KR 1019950001027A KR 19950001027 A KR19950001027 A KR 19950001027A KR 950034652 A KR950034652 A KR 950034652A
Authority
KR
South Korea
Prior art keywords
electrostatic chuck
titanium
less
insulating dielectric
nitride
Prior art date
Application number
KR1019950001027A
Other languages
Korean (ko)
Inventor
히로시 모기
켄이치 아라이
신지 코지마
요시히로 쿠보타
Original Assignee
카나가와 치히로
신에쭈카가쿠코오교오 카부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 카나가와 치히로, 신에쭈카가쿠코오교오 카부시키가이샤 filed Critical 카나가와 치히로
Publication of KR950034652A publication Critical patent/KR950034652A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

본 발명은 정전흡착력 포화시간과 잔류흡착력 소멸시간으로 이루어지는 응답특성이 짧아, 효율이 좋은 정전척의 제공을 목적으로 하는 것이다.An object of the present invention is to provide a highly efficient electrostatic chuck with a short response characteristic including an electrostatic adsorption force saturation time and a residual adsorption force decay time.

본 발명의 정전척은, 전극의 양측을 소결체 및/또는 용사세라믹에 의해 이루어지는 절연성유전체의 흡착면측의 표면거칠기(Ra)를 0.25㎛이하로 함과 아울러, 평면도를 20㎛이하로 하여 이루어지는 것을 특징으로 하는 것이다.The electrostatic chuck of the present invention is characterized in that both sides of the electrode are made to have a surface roughness (Ra) of 0.25 µm or less on the adsorption surface side of the insulating dielectric made of a sintered body and / or a thermal spray ceramic, and a plan view of 20 µm or less. It is to be done.

Description

정전척An electrostatic chuck

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명 정전척의 일련의 종단면도.1 is a series of longitudinal cross-sectional views of the electrostatic chuck of the present invention.

Claims (3)

전극(1)의양측을 소결체 및/또는 용사세라믹으로 이루어지는 절연성유전체층으로 피복한 구조를 보유하는 정전척에 있어서,이 절연성유전체층의 흡착표면의 표면거칠기(Ra)를 0.25㎛이하로 함과 아울러, 평면도를 20㎛이하로 하여 이루어지는 것을 특징으로 하는 정전척.In the electrostatic chuck having a structure in which both sides of the electrode 1 are covered with an insulating dielectric layer made of a sintered body and / or thermal spray ceramics, the surface roughness Ra of the adsorption surface of the insulating dielectric layer is 0.25 μm or less. An electrostatic chuck comprising a flat surface of 20 µm or less. 제1항에 있어서, 전극이 알루미늄, 철, 동, 은, 금,티탄, 텅스텐, 몰리브덴, 백금 등의 금속, 그래파이트, 카아본, 탄화규소, 질화티탄, 탄화티탄, 등의 세라믹 혹은 이들의 혼합물로 이루어지는 것을 특징으로 하는 정전척.The method of claim 1, wherein the electrode is made of a metal such as aluminum, iron, copper, silver, gold, titanium, tungsten, molybdenum, platinum, graphite, carbon, silicon carbide, titanium nitride, titanium carbide, or a mixture thereof. Electrostatic chuck, characterized in that consisting of. 제1항에 있어서, 절연성유전체층의 성분이,산화알루미늄, 질화알루미늄, 질화규소, 산화규소, 산화지르코늄, 산화티탄, 사이알론(sialon), 질화붕소, 탄화규소 혹은 이들의 혼합물로 이루어지는 것을 특징으로 하는 정전척.The component of the insulating dielectric layer is made of aluminum oxide, aluminum nitride, silicon nitride, silicon oxide, zirconium oxide, titanium oxide, sialon, boron nitride, silicon carbide, or a mixture thereof. Electrostatic chuck. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950001027A 1994-04-26 1995-01-21 An electrostatic chuck KR950034652A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-88390 1994-04-26
JP8839094A JPH07297265A (en) 1994-04-26 1994-04-26 Electrostatic chuck

Publications (1)

Publication Number Publication Date
KR950034652A true KR950034652A (en) 1995-12-28

Family

ID=13941474

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950001027A KR950034652A (en) 1994-04-26 1995-01-21 An electrostatic chuck

Country Status (3)

Country Link
JP (1) JPH07297265A (en)
KR (1) KR950034652A (en)
TW (1) TW287314B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100522976B1 (en) * 2000-06-07 2005-10-19 스미토모 오사카 세멘토 가부시키가이샤 Electrostatic chuck

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JPH09260474A (en) * 1996-03-22 1997-10-03 Sony Corp Electrostatic chuck and wafer stage
CN1127750C (en) 1996-12-27 2003-11-12 佳能株式会社 Charge-reducing film, image forming apparatus and method of manufacturing the same
JP4236292B2 (en) * 1997-03-06 2009-03-11 日本碍子株式会社 Wafer adsorption apparatus and method for manufacturing the same
JPH11209182A (en) * 1998-01-22 1999-08-03 Sumitomo Metal Ind Ltd Plasma corrosion resistant member
JPH11214491A (en) * 1998-01-22 1999-08-06 Toshiba Ceramics Co Ltd Wafer holder and production thereof
WO1999059201A1 (en) * 1998-05-11 1999-11-18 Applied Materials Inc Polished ceramic chuck for low backside particles in semiconductor plasma processing
US6717116B1 (en) 1999-08-10 2004-04-06 Ibiden Co., Ltd. Semiconductor production device ceramic plate
JP4529690B2 (en) * 2000-01-20 2010-08-25 住友電気工業株式会社 Wafer holder for semiconductor manufacturing apparatus, manufacturing method thereof, and semiconductor manufacturing apparatus
JP2002057207A (en) * 2000-01-20 2002-02-22 Sumitomo Electric Ind Ltd Wafer holder for semiconductor-manufacturing apparatus, manufacturing method of the same and the semiconductor-manufacturing apparatus
JP4272786B2 (en) * 2000-01-21 2009-06-03 トーカロ株式会社 Electrostatic chuck member and manufacturing method thereof
TWI254403B (en) 2000-05-19 2006-05-01 Ngk Insulators Ltd Electrostatic clamper, and electrostatic attracting structures
JP3693895B2 (en) 2000-07-24 2005-09-14 住友大阪セメント株式会社 Flexible film electrostatic adsorption apparatus, flexible film electrostatic adsorption method, and flexible film surface treatment method
KR20020064508A (en) * 2001-02-02 2002-08-09 삼성전자 주식회사 Electrostatic chuck
JP4493251B2 (en) 2001-12-04 2010-06-30 Ｔｏｔｏ株式会社 Electrostatic chuck module and substrate processing apparatus
DE10232080B4 (en) * 2002-07-15 2015-10-01 Integrated Dynamics Engineering Gmbh Electrostatic gripper and method for its production
CN1864255A (en) * 2003-10-09 2006-11-15 Snt株式会社 Electro-static chuck with non-sintered aln and a method of preparing the same
JP2007150351A (en) * 2007-02-15 2007-06-14 Toto Ltd Electrostatic chuck
JP5270310B2 (en) * 2008-11-13 2013-08-21 東京エレクトロン株式会社 Electrostatic chuck and substrate processing apparatus
JP2010166086A (en) * 2010-04-12 2010-07-29 Fujitsu Semiconductor Ltd Semiconductor manufacturing apparatus using electrostatic chuck
JP2010177698A (en) * 2010-04-12 2010-08-12 Fujitsu Semiconductor Ltd Method for manufacturing electrostatic chuck
JP6038698B2 (en) 2013-03-22 2016-12-07 日本碍子株式会社 Ceramic member and member for semiconductor manufacturing equipment
CN105793467B (en) * 2013-11-29 2018-04-13 株式会社东芝 Plasma device component and its manufacture method
WO2016042957A1 (en) 2014-09-16 2016-03-24 日本碍子株式会社 Ceramic structure, member for substrate holding device, and method for manufacturing ceramic structure
CN111684574B (en) * 2018-02-20 2023-09-05 住友大阪水泥股份有限公司 Electrostatic chuck device and method for manufacturing electrostatic chuck device
KR102632768B1 (en) 2019-06-28 2024-02-01 엔지케이 인슐레이터 엘티디 wafer placement table
CN117735995A (en) * 2020-07-13 2024-03-22 京瓷株式会社 Sample holding tool

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100522976B1 (en) * 2000-06-07 2005-10-19 스미토모 오사카 세멘토 가부시키가이샤 Electrostatic chuck

Also Published As

Publication number Publication date
TW287314B (en) 1996-10-01
JPH07297265A (en) 1995-11-10

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application