KR950032544A - 불투과성 피복물을 적용시키는 방법 - Google Patents

불투과성 피복물을 적용시키는 방법 Download PDF

Info

Publication number
KR950032544A
KR950032544A KR1019950008335A KR19950008335A KR950032544A KR 950032544 A KR950032544 A KR 950032544A KR 1019950008335 A KR1019950008335 A KR 1019950008335A KR 19950008335 A KR19950008335 A KR 19950008335A KR 950032544 A KR950032544 A KR 950032544A
Authority
KR
South Korea
Prior art keywords
integrated circuit
coated
filler
coating composition
coating
Prior art date
Application number
KR1019950008335A
Other languages
English (en)
Inventor
알. 베어링거 클레이톤
차알스 캐밀레티 로버트
앤드류 할러스카 로렌
원톤 마이클 키이쓰
Original Assignee
노만 에드워드 루이스
다우 코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노만 에드워드 루이스, 다우 코닝 코포레이션 filed Critical 노만 에드워드 루이스
Publication of KR950032544A publication Critical patent/KR950032544A/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035Silica
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/57Protection from inspection, reverse engineering or tampering
    • H01L23/573Protection from inspection, reverse engineering or tampering using passive means
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00241Physical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/00258Electromagnetic wave absorbing or shielding materials
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/80Optical properties, e.g. transparency or reflexibility
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

본 발명은 직접회로 상에 불투과성 피복물을 형성시키는 방법에 관한 것이다. 본 방법은 집적회로 상에 실리카 전구체 수지 및 충전재 피복물을 선택적으로 적용시키고, 피복시킨 회로를 충분한 온도로 가열하여 실리카 전구체 수지를 실리카 함유 세라믹 매트릭스로 전환시킴을 포함한다.

Description

불투과성 피복물을 적용시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 실리카 전구체 수지 및 중금속의 불용성 염을 포함하는 충전재를 포함하는 피복 조성물을 집적회로의 표면에 상호 연결에 사용되는 결합 패드(pad) 및 스트리트(Street)가 피복되지 않도록 선택적으로 적용시키고, 피복된 집적회로를 50 내지 1000°C의 온도로 6시간 내에 가열시켜 피복 조성물을 세라믹 피복물로 전환시킴을 특징으로 하여 집적회로 상에 방사선 불투과성 피복물을 형성시키는 방법.
  2. 제1항에 있어서, 충전재가 바륨, 납, 은 ,금, 카드뮴, 안티몬, 주석, 팔라듐, 스트론튬, 텅스텐 및 비스무트의 탄산염, 황산염 및 산화물로부터 선택되는 방법.
  3. 실리카 전구체 수지 및 광학적 불투과성 충전재를 포함하는 피복 조성물을 집적회로 상에 상호 연결에 사용되는 결합 패드 및 스트리트가 피복되지 않도록 선택적으로 적용시키고, 피복시킨 전자 기판을 50 내지 1000°C의 온도에서 6시간 내에 가열시켜 피복 조성물을 세라믹 피복물로 전환시킴을 특징으로 한여 집적회로 상에 광학적 불투과성 피복물을 형성시키는 방법.
  4. 제3항에 있어서, 충전재가 규소 또는 알루미나의 산화물, 질화물 및 탄화물; 금속 및 무기 안료로부터 선택되는 방법.
  5. 제1항 또는 제3항에 있어서, 실리카 전구체 수지가 수소 실세스실록산 수지 및 가수분해되거나 부분적으로 가수분해된 RnSi(OR)4-n〔여기서, R은 탄소수 1내지 20의 지방족, 지환족 또는 방향족 치환체이고 n은 0내지 3이다〕 로부터 선택되는 방법.
  6. 제1항 또는 제3항에 있어서, 피복된 집적회로를 공기, O2산소 플라즈마, 불활성 가스, 질소, 암모니아, 아민, 수분 및 N2O 로부터 선택된 환경 중에서 3시간 미만 동안 50내지 800°C의 온도에서 가열시키는 방법.
  7. 제1항 또는 제3항에 있어서, 피복 조성물이 또한 충전재 표면 개질제, 현탁제 및 내마모제로부터 선택된 물질을 함유하는 방법.
  8. 제1항 또는 제3항에 있어서, 충전재가 분말, 입자, 필라멘트, 플레이크(flake) 및 마이크로볼룬(microballoon)으로 이루어진 그룹으로부터 선택된 형태인 방법.
  9. 제1항 또는 제3항에 있어서,충전재가 5 내지 80 중량%의 양으로 피복 조성물 중에 존재하는 방법.
  10. 제1항 또는 제3항에 방법에 의해 피복된 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950008335A 1994-04-12 1995-04-11 불투과성 피복물을 적용시키는 방법 KR950032544A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/226,585 1994-04-12
US08/226,585 US5399441A (en) 1994-04-12 1994-04-12 Method of applying opaque coatings

Publications (1)

Publication Number Publication Date
KR950032544A true KR950032544A (ko) 1995-12-22

Family

ID=22849511

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950008335A KR950032544A (ko) 1994-04-12 1995-04-11 불투과성 피복물을 적용시키는 방법

Country Status (4)

Country Link
US (1) US5399441A (ko)
EP (1) EP0684636A1 (ko)
JP (1) JPH0884959A (ko)
KR (1) KR950032544A (ko)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0585601B1 (en) * 1992-07-31 1999-04-28 Hughes Electronics Corporation Integrated circuit security system and method with implanted interconnections
US5492958A (en) * 1993-03-08 1996-02-20 Dow Corning Corporation Metal containing ceramic coatings
JP3418458B2 (ja) * 1993-08-31 2003-06-23 富士通株式会社 半導体装置の製造方法
JP3214186B2 (ja) * 1993-10-07 2001-10-02 三菱電機株式会社 半導体装置の製造方法
US5591680A (en) * 1993-12-06 1997-01-07 Micron Communications Formation methods of opaque or translucent films
US5889330A (en) * 1995-03-10 1999-03-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device whose flattening resin film component has a controlled carbon atom content
DE19515187C2 (de) * 1995-04-25 2003-07-10 Infineon Technologies Ag Chip-Abdeckung
US5883429A (en) * 1995-04-25 1999-03-16 Siemens Aktiengesellschaft Chip cover
DE19515188C2 (de) * 1995-04-25 1998-02-19 Siemens Ag Chip-Abdeckung
JP3070450B2 (ja) * 1995-07-14 2000-07-31 ヤマハ株式会社 多層配線形成法
US5661092A (en) * 1995-09-01 1997-08-26 The University Of Connecticut Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof
US5783846A (en) * 1995-09-22 1998-07-21 Hughes Electronics Corporation Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
US5693701A (en) 1995-10-26 1997-12-02 Dow Corning Corporation Tamper-proof electronic coatings
EP0771023A3 (en) 1995-10-27 1999-03-24 Honeywell Inc. Method of applying a protective coating on a semiconductor integrated circuit
US6287985B1 (en) * 1995-10-27 2001-09-11 Honeywell International Inc. Process for applying a molten droplet coating for integrated circuits
US5877093A (en) * 1995-10-27 1999-03-02 Honeywell Inc. Process for coating an integrated circuit device with a molten spray
US5753374A (en) * 1995-11-27 1998-05-19 Dow Corning Corporation Protective electronic coating
US5789325A (en) * 1996-04-29 1998-08-04 Dow Corning Corporation Coating electronic substrates with silica derived from polycarbosilane
US5780163A (en) * 1996-06-05 1998-07-14 Dow Corning Corporation Multilayer coating for microelectronic devices
US5730792A (en) * 1996-10-04 1998-03-24 Dow Corning Corporation Opaque ceramic coatings
US5863595A (en) * 1996-10-04 1999-01-26 Dow Corning Corporation Thick ceramic coatings for electronic devices
US5807611A (en) * 1996-10-04 1998-09-15 Dow Corning Corporation Electronic coatings
US5776235A (en) * 1996-10-04 1998-07-07 Dow Corning Corporation Thick opaque ceramic coatings
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
JP3123449B2 (ja) * 1996-11-01 2001-01-09 ヤマハ株式会社 多層配線形成法
JP3082688B2 (ja) * 1996-11-05 2000-08-28 ヤマハ株式会社 配線形成法
EP0843508A3 (en) * 1996-11-15 2000-04-19 Honeywell Inc. Coating circuits to dissipate heat
JP3225872B2 (ja) 1996-12-24 2001-11-05 ヤマハ株式会社 酸化シリコン膜形成法
JPH10247686A (ja) * 1996-12-30 1998-09-14 Yamaha Corp 多層配線形成法
US5973375A (en) * 1997-06-06 1999-10-26 Hughes Electronics Corporation Camouflaged circuit structure with step implants
JP2001517874A (ja) 1997-09-19 2001-10-09 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー.ファオ. 製品の盗用と製品の操作を防止するための半導体素子の配線方法、この方法によって製造される半導体素子、およびチップカードでの半導体素子の使用方法
DE19746641B4 (de) * 1997-09-19 2006-02-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verdrahtungsverfahren für Halbleiter-Bauelemente zur Verhinderung von Produktpiraterie und Produktmanipulation und Verwendung des Halbleiter-Bauelements in einer Chipkarte
JPH11103079A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
PL331114A1 (en) 1998-01-28 1999-08-02 Chipworks Method of analysing an integrated circuit, method of visualising an integrated circuit and method of analysing at last a portion of integrated circuit
EP1029347B1 (en) * 1998-06-10 2007-02-07 Koninklijke Philips Electronics N.V. Semiconductor device comprising an integrated circuit provided with a ceramic security coating and method of manufacturing such a device
US5935638A (en) * 1998-08-06 1999-08-10 Dow Corning Corporation Silicon dioxide containing coating
US6396368B1 (en) 1999-11-10 2002-05-28 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
TW502286B (en) 1999-12-09 2002-09-11 Koninkl Philips Electronics Nv Semiconductor device comprising a security coating and smartcard provided with such a device
US7217977B2 (en) * 2004-04-19 2007-05-15 Hrl Laboratories, Llc Covert transformation of transistor properties as a circuit protection method
US6815816B1 (en) 2000-10-25 2004-11-09 Hrl Laboratories, Llc Implanted hidden interconnections in a semiconductor device for preventing reverse engineering
US6936533B2 (en) * 2000-12-08 2005-08-30 Samsung Electronics, Co., Ltd. Method of fabricating semiconductor devices having low dielectric interlayer insulation layer
US6791191B2 (en) 2001-01-24 2004-09-14 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using vias without metal terminations
US7294935B2 (en) * 2001-01-24 2007-11-13 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
US6740942B2 (en) * 2001-06-15 2004-05-25 Hrl Laboratories, Llc. Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact
US6774413B2 (en) 2001-06-15 2004-08-10 Hrl Laboratories, Llc Integrated circuit structure with programmable connector/isolator
CA2463568A1 (fr) * 2001-10-15 2003-04-24 Aluminium Pechiney Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire
FR2830857B1 (fr) * 2001-10-15 2004-07-30 Pechiney Aluminium Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire
FR2830856B1 (fr) * 2001-10-15 2004-07-30 Pechiney Aluminium Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire
US7723162B2 (en) * 2002-03-22 2010-05-25 White Electronic Designs Corporation Method for producing shock and tamper resistant microelectronic devices
US6897535B2 (en) 2002-05-14 2005-05-24 Hrl Laboratories, Llc Integrated circuit with reverse engineering protection
AU2003250808A1 (en) * 2002-08-09 2004-03-19 Siemens Aktiengesellschaft Coating of an integrated semiconductor circuit, and method for producing said coating
US20040048194A1 (en) * 2002-09-11 2004-03-11 International Business Machines Corporation Mehod for forming a tunable deep-ultraviolet dielectric antireflection layer for image transfer processing
US7049667B2 (en) 2002-09-27 2006-05-23 Hrl Laboratories, Llc Conductive channel pseudo block process and circuit to inhibit reverse engineering
US6979606B2 (en) 2002-11-22 2005-12-27 Hrl Laboratories, Llc Use of silicon block process step to camouflage a false transistor
US6940111B2 (en) * 2002-11-29 2005-09-06 Infineon Technologies Aktiengesellschaft Radiation protection in integrated circuits
AU2003293540A1 (en) 2002-12-13 2004-07-09 Raytheon Company Integrated circuit modification using well implants
US8210120B2 (en) * 2003-01-10 2012-07-03 Microsemi Corporation Systems and methods for building tamper resistant coatings
US7242063B1 (en) 2004-06-29 2007-07-10 Hrl Laboratories, Llc Symmetric non-intrusive and covert technique to render a transistor permanently non-operable
DE102004039693B4 (de) * 2004-08-16 2009-06-10 Infineon Technologies Ag Vergussmasse, Chipmodul und Verfahren zur Herstellung eines Chipmoduls
US20070141374A1 (en) * 2005-12-19 2007-06-21 General Electric Company Environmentally resistant disk
US8168487B2 (en) 2006-09-28 2012-05-01 Hrl Laboratories, Llc Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer
WO2015030673A1 (en) * 2013-09-02 2015-03-05 Heptagon Micro Optics Pte. Ltd. Opto-electronic module including a non-transparent separation member between a light emitting element and a light detecting element
EP4047644A1 (de) * 2021-02-23 2022-08-24 Siemens Aktiengesellschaft Elektronische baugruppe, füllmittel und verfahren zur qualitätsprüfung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114335A (en) * 1980-02-13 1981-09-08 Fujitsu Ltd Semiconductor device and its manufacture
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4746693A (en) * 1986-12-12 1988-05-24 Rca Corporation Polyalkylsilsesquioxane coating composition
US5026667A (en) * 1987-12-29 1991-06-25 Analog Devices, Incorporated Producing integrated circuit chips with reduced stress effects
US5030796A (en) * 1989-08-11 1991-07-09 Rockwell International Corporation Reverse-engineering resistant encapsulant for microelectric device
US5258334A (en) * 1993-01-15 1993-11-02 The U.S. Government As Represented By The Director, National Security Agency Process of preventing visual access to a semiconductor device by applying an opaque ceramic coating to integrated circuit devices
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings

Also Published As

Publication number Publication date
US5399441A (en) 1995-03-21
JPH0884959A (ja) 1996-04-02
EP0684636A1 (en) 1995-11-29

Similar Documents

Publication Publication Date Title
KR950032544A (ko) 불투과성 피복물을 적용시키는 방법
MY125699A (en) Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same
KR950032512A (ko) 충전된 보로실라잔을 사용한 전자 피복물
EP1985593A3 (en) Quartz glass crucible, its process of manufacture and use
EP1188810A3 (en) Electrically conductive hot-melt silicone adhesive composition
KR870009046A (ko) 유리 접착 성분이 함유된 서어멧 기판
EP0923988A4 (ko)
JP2005503467A5 (ko)
EP0779653A3 (en) Flip chip silicone pressure sensitive conductive adhesive
EP1428901A3 (en) Thermal barrier coating containing reactive protective materials and method for preparing same
EP0737360A1 (en) Protective coating combination for lead frames
MY114561A (en) Curable organosiloxane compositions and semiconductor devices
CA2114194A1 (en) Coating composition, granules coated with same, and method of reducing dust generation
EP0787773A3 (en) Hardenable organopolysiloxane compositions
DE69317090D1 (de) Hartlotbares Aluminiummaterial und Verfahren zu deren Herstellung
PL1675971T3 (pl) Metoda powlekania powierzchni przedmiotów przy użyciu strumienia plazmy
TW200516119A (en) Microparticle containing silicone release coatings having improved anti-block and release properties
US5298328A (en) Packing material and method of making same
CA2281804A1 (en) Ceramic/metal and a15/metal superconducting composite materials exploiting superconducting proximity effect
WO1998042505A1 (en) Silicon nitride coating compositions
IL134234A0 (en) Coating compositions with a base consisting of silanes containing epoxide groups
JPS5873904A (ja) 銀充填ガラス
MY117561A (en) Solventless coating
EP1040869A3 (en) Gold-containing catalyst and method of manufacturing epoxide using the same
MY122351A (en) Fine wire of gold alloy, method for manufacture thereof and use thereof

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
NORF Unpaid initial registration fee