KR950032544A - 불투과성 피복물을 적용시키는 방법 - Google Patents
불투과성 피복물을 적용시키는 방법 Download PDFInfo
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- KR950032544A KR950032544A KR1019950008335A KR19950008335A KR950032544A KR 950032544 A KR950032544 A KR 950032544A KR 1019950008335 A KR1019950008335 A KR 1019950008335A KR 19950008335 A KR19950008335 A KR 19950008335A KR 950032544 A KR950032544 A KR 950032544A
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- Prior art keywords
- integrated circuit
- coated
- filler
- coating composition
- coating
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- 239000011248 coating agent Substances 0.000 title claims abstract 5
- 238000000576 coating method Methods 0.000 title claims abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 12
- 238000000034 method Methods 0.000 claims abstract 10
- 239000000945 filler Substances 0.000 claims abstract 8
- 239000011347 resin Substances 0.000 claims abstract 6
- 229920005989 resin Polymers 0.000 claims abstract 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract 6
- 239000002243 precursor Substances 0.000 claims abstract 5
- 238000010438 heat treatment Methods 0.000 claims abstract 3
- 239000008199 coating composition Substances 0.000 claims 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 238000005524 ceramic coating Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000005299 abrasion Methods 0.000 claims 1
- 125000001931 aliphatic group Chemical group 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 150000004649 carbonic acid derivatives Chemical group 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910001385 heavy metal Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000001023 inorganic pigment Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 claims 1
- 239000011133 lead Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000003607 modifier Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims 1
- 239000000375 suspending agent Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
본 발명은 직접회로 상에 불투과성 피복물을 형성시키는 방법에 관한 것이다. 본 방법은 집적회로 상에 실리카 전구체 수지 및 충전재 피복물을 선택적으로 적용시키고, 피복시킨 회로를 충분한 온도로 가열하여 실리카 전구체 수지를 실리카 함유 세라믹 매트릭스로 전환시킴을 포함한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (10)
- 실리카 전구체 수지 및 중금속의 불용성 염을 포함하는 충전재를 포함하는 피복 조성물을 집적회로의 표면에 상호 연결에 사용되는 결합 패드(pad) 및 스트리트(Street)가 피복되지 않도록 선택적으로 적용시키고, 피복된 집적회로를 50 내지 1000°C의 온도로 6시간 내에 가열시켜 피복 조성물을 세라믹 피복물로 전환시킴을 특징으로 하여 집적회로 상에 방사선 불투과성 피복물을 형성시키는 방법.
- 제1항에 있어서, 충전재가 바륨, 납, 은 ,금, 카드뮴, 안티몬, 주석, 팔라듐, 스트론튬, 텅스텐 및 비스무트의 탄산염, 황산염 및 산화물로부터 선택되는 방법.
- 실리카 전구체 수지 및 광학적 불투과성 충전재를 포함하는 피복 조성물을 집적회로 상에 상호 연결에 사용되는 결합 패드 및 스트리트가 피복되지 않도록 선택적으로 적용시키고, 피복시킨 전자 기판을 50 내지 1000°C의 온도에서 6시간 내에 가열시켜 피복 조성물을 세라믹 피복물로 전환시킴을 특징으로 한여 집적회로 상에 광학적 불투과성 피복물을 형성시키는 방법.
- 제3항에 있어서, 충전재가 규소 또는 알루미나의 산화물, 질화물 및 탄화물; 금속 및 무기 안료로부터 선택되는 방법.
- 제1항 또는 제3항에 있어서, 실리카 전구체 수지가 수소 실세스실록산 수지 및 가수분해되거나 부분적으로 가수분해된 RnSi(OR)4-n〔여기서, R은 탄소수 1내지 20의 지방족, 지환족 또는 방향족 치환체이고 n은 0내지 3이다〕 로부터 선택되는 방법.
- 제1항 또는 제3항에 있어서, 피복된 집적회로를 공기, O2산소 플라즈마, 불활성 가스, 질소, 암모니아, 아민, 수분 및 N2O 로부터 선택된 환경 중에서 3시간 미만 동안 50내지 800°C의 온도에서 가열시키는 방법.
- 제1항 또는 제3항에 있어서, 피복 조성물이 또한 충전재 표면 개질제, 현탁제 및 내마모제로부터 선택된 물질을 함유하는 방법.
- 제1항 또는 제3항에 있어서, 충전재가 분말, 입자, 필라멘트, 플레이크(flake) 및 마이크로볼룬(microballoon)으로 이루어진 그룹으로부터 선택된 형태인 방법.
- 제1항 또는 제3항에 있어서,충전재가 5 내지 80 중량%의 양으로 피복 조성물 중에 존재하는 방법.
- 제1항 또는 제3항에 방법에 의해 피복된 집적회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8/226,585 | 1994-04-12 | ||
US08/226,585 US5399441A (en) | 1994-04-12 | 1994-04-12 | Method of applying opaque coatings |
Publications (1)
Publication Number | Publication Date |
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KR950032544A true KR950032544A (ko) | 1995-12-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950008335A KR950032544A (ko) | 1994-04-12 | 1995-04-11 | 불투과성 피복물을 적용시키는 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5399441A (ko) |
EP (1) | EP0684636A1 (ko) |
JP (1) | JPH0884959A (ko) |
KR (1) | KR950032544A (ko) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0585601B1 (en) * | 1992-07-31 | 1999-04-28 | Hughes Electronics Corporation | Integrated circuit security system and method with implanted interconnections |
US5492958A (en) * | 1993-03-08 | 1996-02-20 | Dow Corning Corporation | Metal containing ceramic coatings |
JP3418458B2 (ja) * | 1993-08-31 | 2003-06-23 | 富士通株式会社 | 半導体装置の製造方法 |
JP3214186B2 (ja) * | 1993-10-07 | 2001-10-02 | 三菱電機株式会社 | 半導体装置の製造方法 |
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-
1994
- 1994-04-12 US US08/226,585 patent/US5399441A/en not_active Expired - Fee Related
-
1995
- 1995-04-05 EP EP95302282A patent/EP0684636A1/en not_active Withdrawn
- 1995-04-05 JP JP7080302A patent/JPH0884959A/ja not_active Withdrawn
- 1995-04-11 KR KR1019950008335A patent/KR950032544A/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US5399441A (en) | 1995-03-21 |
JPH0884959A (ja) | 1996-04-02 |
EP0684636A1 (en) | 1995-11-29 |
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