KR950021912A - 자기정렬 구조의 반도체 레이저 제조방법 - Google Patents
자기정렬 구조의 반도체 레이저 제조방법 Download PDFInfo
- Publication number
- KR950021912A KR950021912A KR1019930029080A KR930029080A KR950021912A KR 950021912 A KR950021912 A KR 950021912A KR 1019930029080 A KR1019930029080 A KR 1019930029080A KR 930029080 A KR930029080 A KR 930029080A KR 950021912 A KR950021912 A KR 950021912A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor laser
- ridge
- type
- self
- polyimide
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004642 Polyimide Substances 0.000 claims abstract description 9
- 229920001721 polyimide Polymers 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract 5
- 238000001312 dry etching Methods 0.000 claims abstract 3
- 238000005498 polishing Methods 0.000 claims abstract 3
- 238000005530 etching Methods 0.000 claims abstract 2
- 238000002161 passivation Methods 0.000 claims abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 230000001131 transforming effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000001393 microlithography Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (5)
- n형 InP기판(11, 22)위에 n-InP버퍼층(12, 23), n-InGaAsP도파로층(13, 24 , 36), 도핑되지 않은 InGaAsP활성층(14, 25, 37), p-InGaAsP도파로층(15, 26, 38 ), p-InP클래드층(16, 27), 및 p-InGaAsP캡층(17, 28)을 순차적으로 형성시키는 공정(A)과, 상기 p-InGaAsP캡층(17) 및 상기 p-InP클래드층(16)을 에칭에 의해 리지 폭(w)이 1.5내지 2um인 리지 도파로를 형성하는 공정(B)과, 상기 에칭된 채널부분에 광감지용 폴리이미드(18)를 코우팅하여 리지 및 리지 양측의 채널부분을 포함하도록 자기정렬, UV노광 및 성장공정을 거쳐 패턴을 형성하는 공정(C)과, 상기 리지위의 폴리이미드(18)만을 건식식각에 의해서 제거하는 공정(D)과, 상기 폴리이미드(18)가 제거된 채널바깥부분의 웨이퍼 표면에 패시베이션막을 입히기 위해 SiNx(또는 SiO2) 절연막(19)을 PECVD로 코우팅하고 리소그라피에 의해 패턴을 형성하는 공정 (E)과, 리프트-오프에 의한 상기 웨이퍼 윗면에 p형 오믹금속(20) 증착, 웨이퍼 뒷면을 연마한 후 n형 오믹금속(21)을 증착하는 공정(F)을 포함하는 자기정렬구조의 반도체 레이저 제조방법.
- 제1항에 있어서, 상기 (B)공정후, 상기 에이퍼 전체상면에 소정 증착에 의해서 SiNx절연막(29)을 증착하고(공정(나)), 폴리이미드(30)를 코우팅 및 패턴을 형성한 후(공정(다)), 리지상단의 폴리이미드(30)를 건식식각하고(공정(라)), 이 위에 SiNx(또는 SiO2)절연막(31)을 패시베이션하고(공정(마)), 리프트-오프에 의한 상기 웨이퍼 윗면에 p형 오믹금속(32)을 증착하고, 웨이퍼 뒷면을 연마한 후 n형 오믹금속(33)을 증착하는 공정(바)이 부가되는 것을 특징으로 하는 자기정렬구조의 반도체 레이저 제조방법.
- 제2항에 있어서, 상기 (라)공정과 (마)공정 사이에 제2차 건식식각에 의해 채널속에 남아있는 폴리이미드(30)를 완전히 제거하는 공정이 부가되는 것을 특징으로 하는 자기정렬구조의 반도체 레이저 제조방법.
- 제1항, 2항 또는 3항중 어느 한항에 있어서, 상기 n형 InGaAsP도파로층(14, 25, 37), 하단에 회절격자를 넣어 분포귀환형 반도체 레이저(DBF LD) 또는 분포브레그 반사판 반도체 레이저를 제작할 수 있는 것을 특징으로 하는 자기정렬구조의 반도체 레이저 제조방법.
- 제1항, 2항, 또는 3항중 어느 한항에 있어서, 1.3um파장의 도핑되지 않은 InGaAsP활성층(14, 25, 37)을 1.55um파장의 도핑되지 않은 InGaAsP활성층으로, 1.1um파장의 p형(15, 26, 38) 및 n형(13, 24, 36) InGaAsP도파로층들을 1.3um파장의 p형 및 n형 InGaAsP도파로층으로 변형시키는 것을 특징으로 하는 자기정렬구조의 반도체 레이저 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930029080A KR970003751B1 (ko) | 1993-12-22 | 1993-12-22 | 자기정렬 구조의 반도체 레이저 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930029080A KR970003751B1 (ko) | 1993-12-22 | 1993-12-22 | 자기정렬 구조의 반도체 레이저 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950021912A true KR950021912A (ko) | 1995-07-26 |
| KR970003751B1 KR970003751B1 (ko) | 1997-03-21 |
Family
ID=19372132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930029080A KR970003751B1 (ko) | 1993-12-22 | 1993-12-22 | 자기정렬 구조의 반도체 레이저 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970003751B1 (ko) |
-
1993
- 1993-12-22 KR KR1019930029080A patent/KR970003751B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR970003751B1 (ko) | 1997-03-21 |
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