KR950021373U - 반도체 스퍼터링 장비의 웨이퍼 가열장치 - Google Patents

반도체 스퍼터링 장비의 웨이퍼 가열장치

Info

Publication number
KR950021373U
KR950021373U KR2019930027238U KR930027238U KR950021373U KR 950021373 U KR950021373 U KR 950021373U KR 2019930027238 U KR2019930027238 U KR 2019930027238U KR 930027238 U KR930027238 U KR 930027238U KR 950021373 U KR950021373 U KR 950021373U
Authority
KR
South Korea
Prior art keywords
heating device
sputtering equipment
wafer heating
semiconductor sputtering
semiconductor
Prior art date
Application number
KR2019930027238U
Other languages
English (en)
Other versions
KR200156798Y1 (ko
Inventor
김학남
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019930027238U priority Critical patent/KR200156798Y1/ko
Publication of KR950021373U publication Critical patent/KR950021373U/ko
Application granted granted Critical
Publication of KR200156798Y1 publication Critical patent/KR200156798Y1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR2019930027238U 1993-12-10 1993-12-10 반도체 스퍼터링 장비의 웨이퍼 가열장치 KR200156798Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019930027238U KR200156798Y1 (ko) 1993-12-10 1993-12-10 반도체 스퍼터링 장비의 웨이퍼 가열장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019930027238U KR200156798Y1 (ko) 1993-12-10 1993-12-10 반도체 스퍼터링 장비의 웨이퍼 가열장치

Publications (2)

Publication Number Publication Date
KR950021373U true KR950021373U (ko) 1995-07-28
KR200156798Y1 KR200156798Y1 (ko) 1999-09-01

Family

ID=19370568

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019930027238U KR200156798Y1 (ko) 1993-12-10 1993-12-10 반도체 스퍼터링 장비의 웨이퍼 가열장치

Country Status (1)

Country Link
KR (1) KR200156798Y1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100596503B1 (ko) * 2004-06-01 2006-07-03 삼성전자주식회사 기판 가열로 및 이를 포함하는 화학 기상 증착 장치

Also Published As

Publication number Publication date
KR200156798Y1 (ko) 1999-09-01

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