KR950015558A - 수직종형감압 cvd장치 - Google Patents

수직종형감압 cvd장치 Download PDF

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Publication number
KR950015558A
KR950015558A KR1019940028927A KR19940028927A KR950015558A KR 950015558 A KR950015558 A KR 950015558A KR 1019940028927 A KR1019940028927 A KR 1019940028927A KR 19940028927 A KR19940028927 A KR 19940028927A KR 950015558 A KR950015558 A KR 950015558A
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South Korea
Prior art keywords
nozzle
gas
vertical
boat
nozzles
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KR1019940028927A
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English (en)
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KR0148616B1 (ko
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다쓰야 우사미
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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Publication of KR950015558A publication Critical patent/KR950015558A/ko
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Publication of KR0148616B1 publication Critical patent/KR0148616B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

수직종헝감압 CVD 장치는 실란개스와 산화개스에 각각 할당된 제1 및 제2환상노즐을 구비하고, 제1노즐은 웨이퍼의 적층더미가 장착된 보우트의 최하부에 연결되어 있다. 그리고 이 두개의 노즐은 서로 대향되게 설치된다. 제2노즐로부터 분사된 전체산화개스는 제1, 2노즐주변에서 측정된바와 같은 동일한값내에서, 동일한거리 이상의 제1노즐에 도다되게 된다. 결과적으로, 두종류의 개스는 일정한비로 혼합되게 된다. 두 노즐상이의 거리는 산화개스외 종류에 관계없이 초기반응없이도 실란개스와 함게 산화개스를 일정하게 혼합시키기위해 변경시킬 수 있다.

Description

수직종형감압 CVD장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명를 구체화하는 수직종형감압 CVD 장치를 보여주는 단면도이다.

Claims (5)

  1. 웨이퍼의 적층더미가 장착된 보우트; 상기 보우트를 고정하는 열절연튜브; 상기 보우트를 감싸는 내부튜브; 상기 내부튜브를 감싸고 그리고 보우트의 도입을 위하여 그 밑면에 개구를 갖도록 형성하고 그 내주변상에서 내부 튜브를 지지하도록 하는 플렌지를 가지는 외부튜브; 상기 외부튜브를 감싸는 히터; 제 1반응개스를 분사시키기위해 그 주변부를 따라 일정한 거리를 두고 위치한 복수의 홀들을 갖도록 형성하고 상기 보우트의 밑면부분을 감싸는 제1환상노즐; 및 제2반응개스를 분사시키기위해 그 주변부를 따라 거리를 두고 위치한 복수의 홀들을 갖도록 형성하고 제1노즐의 아래에 배치하는 제2환상노즐을 구비하는 것을 특징으로 하는 수직종형감압 CVD 장치.
  2. 제1항에 있어서, 상기 제1노즐과 제2노즐사이의 거리를 조절하는 조절수단을 또한 포함하는 것을 특징으로 하는 수직종형감압 CVD 장치.
  3. 제2항에 있어서, 상기 조절수단이 상기 플랜지의 내주변부로부터 돌출되는 포스트; 상기 포스트의 전면에 슬라이딩되도록 결합되고 그리고 상기 제2노즐의 측면상에 형성되는 결합부; 및 상기 제2노즐을 제위치에서 록킹하는 록킹수단을 구비하는 것을 특징으로 하는 수직종형감압 CVD 장치.
  4. 제1항에 있어서, 상기 제1노즐과 상기 제2노즐의 같은 용적과 동일한 형상을 갖는 것을 특징으로 하는 수직 종형감압 CVD 장치.
  5. 제1항에 있어서. 상기 제1개스와 제2개스가 모노실란개스와 산화개스로 각각 구성되는 것을 특징으로 하는 수직종형감압 CVD 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940028927A 1993-11-04 1994-11-04 수직종형감압 cvd장치 KR0148616B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5275344A JPH07130662A (ja) 1993-11-04 1993-11-04 縦型減圧ｃｖｄ装置
JP93-275344 1993-11-04

Publications (2)

Publication Number Publication Date
KR950015558A true KR950015558A (ko) 1995-06-17
KR0148616B1 KR0148616B1 (ko) 1998-12-01

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KR1019940028927A KR0148616B1 (ko) 1993-11-04 1994-11-04 수직종형감압 cvd장치

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US (1) US5503678A (ko)
JP (1) JPH07130662A (ko)
KR (1) KR0148616B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3971810B2 (ja) * 1995-11-30 2007-09-05 三星電子株式会社 縦型拡散炉
US5904958A (en) * 1998-03-20 1999-05-18 Rexam Industries Corp. Adjustable nozzle for evaporation or organic monomers
US6210485B1 (en) * 1998-07-21 2001-04-03 Applied Materials, Inc. Chemical vapor deposition vaporizer
US6358323B1 (en) * 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
US6926920B2 (en) * 2002-06-11 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Chemical vapor deposition (CVD) calibration method providing enhanced uniformity
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
KR20200062625A (ko) * 2018-11-27 2020-06-04 삼성전자주식회사 반도체 처리 장치 및 반도체 처리 시스템

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0830273B2 (ja) * 1986-07-10 1996-03-27 株式会社東芝 薄膜形成方法及び装置
JPS645013A (en) * 1987-06-26 1989-01-10 Fujitsu Ltd Vapor growth equipment
JPS6473930A (en) * 1987-09-16 1989-03-20 Mitsubishi Electric Corp Digital signal branching transmission system
JPH01161719A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 気相成長装置
JPH0642474B2 (ja) * 1988-03-31 1994-06-01 株式会社東芝 半導体製造装置
US5127365A (en) * 1990-02-27 1992-07-07 Kabushiki Kaisha Toshiba Vertical heat-treatment apparatus for semiconductor parts
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
JPH04332122A (ja) * 1991-05-07 1992-11-19 Nec Kyushu Ltd 減圧ｃｖｄ装置
JPH05144746A (ja) * 1991-11-20 1993-06-11 Nec Corp 減圧ｃｖｄ装置

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Publication number Publication date
KR0148616B1 (ko) 1998-12-01
JPH07130662A (ja) 1995-05-19
US5503678A (en) 1996-04-02

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