KR950014028A - 더미스터용 세라믹 조성물 - Google Patents
더미스터용 세라믹 조성물 Download PDFInfo
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- KR950014028A KR950014028A KR1019940031258A KR19940031258A KR950014028A KR 950014028 A KR950014028 A KR 950014028A KR 1019940031258 A KR1019940031258 A KR 1019940031258A KR 19940031258 A KR19940031258 A KR 19940031258A KR 950014028 A KR950014028 A KR 950014028A
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Abstract
고온도를 검출하기 위한, 고온에서 안정하고 또 산화·환원의 양분위기로 사용할 수 있는 특성을 나타내는 더미스터용 세라믹 조성물을 제공한다. YCrO3계 재료로, Y의 일부/또는 전부를 Sr, Sm으로 치환하여, Cr의 일부를 Fe, Ti로 치환하는 것에 의해, 300∼1100。C에서 실용적인 저항치를 갖고, 또 더미스터 소자의 환경 조건에 변화 또는 열이력에 대하여 안정한 더미스터 소자를 제공하는 것이다. n형 및 p형 성분의 혼합을 갖는 일반적으로 AMO3페로브스카이트 구조 (A=2A,3A,3B 아족 원소, M=4A,5A,6A,8 아족 원소)는, 아족은 IUPAC 국제 주기율표의 것이다, 같은 성질을 갖는다. La가 없으면 바람직하며 소결 조제를 사용할 수 있다.
Description
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Claims (22)
- 하기 식으로 나타내는 페로브스카이트 구조를 갖는 화합물을 필수성분으로 포함하는 세라믹 조성물. AMO3여기에서 A는 IUPAC 국제 주기율표의 2A, 3A, 3B 아족 원소들로부터 선택되는 적어도 하나이고, 여기서 M은 IUPAC 국제 주기율표의 4A, 5A, 6A 및 8 아족 원소들로부터 선택되는 적어도 하나이고, 여기서 상기한 페로브스카이트 화합물은 p형 및 n형 성분로 이루어지며, 상기 원소들을 페로브스카이트 구조내 용해도 한계 내에서 필수적으로 존재한다.
- 제1항에 있어서, 상기한 M은 Fe, Ti로 이루어진 제일 그룹의 적어도 하나와 Cr, Mn, Co, Ni로 이루어진 제이 그룹의 적어도 하나와의 혼합물인 세라믹 조성물.
- 제2항에 있어서, 상기한 제일 그룹은 Fe, Ti이고, 상기한 제이 그룹은 Cr 및 Mn, Co, Ni 중의 적어도 하나인 세라믹 조성물.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기한 M은 (Cr, Mn, Co, Ni)1-Y-2FeYTz로 나타내지는 세라믹 조성물. 여기에서 Y/(1-Y-Z)는 0.05 내지 0.4이고 Z는 0.025 내지 0.35이다.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기한 M은 Mn, Co, Ni로 이루어진 군의 적어도 하나인 세라믹 조성물.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기한 M은 Cr인 세라믹 조성물.
- 제1항 내지 제6항 중 어느 한 항에 있어서, 상기한 M은 Y, 란타노이드 계열 원소 및 Ga로 이루어진 군에서 선택되는 적어도 하나인 세라믹 조성물.
- 제1항 내지 제7항 중 어느 한 항에 있어서, 상기한 란타노이드 계열 원소는 La가 아닌 다른 것인 세라믹 조성물.
- 제1항 내지 제8항 중 어느 한 항에 있어서, 상기한 A는 Y, Sm 또는 이들의 혼합물인 세라믹 조성물.
- 제1항 내지 제9항 중 어느 한 항에 있어서 소결 조제로부터의 상이 존재하고 상기한 소결 조제는 전체 조성물 중량에 대하여 0.5 내지 10%양으로 출발 분말 혼합물에 포함되어 있는 세라믹 조성물.
- 제1항 내지 제10항 중 어느 한 항에 있어서, 소결 조제로부터의 상이 존재하고 상기 소결 조제는 전체 조성물 중량에 대하여 0.8 내지 5%양으로 출발 분말 혼합물에 포함되어 있는 세라믹 조성물.
- 제1항 내지 제11항 중 어느 한 항에 있어서, 상기한 소결 조제는 실리카, 멀라이트, 칼슘 실리케이트, 스트론튬 실리케이트로 이루어진 군에서 선택되는 것인 세라믹 조성물.
- 제12항 내지 제16항 중 어느 한 항에 있어서, 상기한 소결 조제는 실리카인 세라믹 조성물.
- 제1항 내지 제13항 중 어느 한 항에 있어서, 상기한 화합물은 하기 화학식으로 나타내어지는 더미스터용 세라믹 조성물. (Y1-XQX(Cr1-Y-ZFeYTiZ)03여기에서 Q는 IUPAC의 국제 주기율표위 2A, 3A, 3B 아족 원소로 이루어진 군에서 선택되는 적어도 하나이고, 여기에서 X, Y, Z는 0.351≥X≥0.001 0.4≥Y/(1-Y-Z)≥0.05 0.35≥Z≥0.0025이다.
- 제1항 내지 제13항 중 어느 한 항에 있어서, Q는 Sr인 세라믹 조성물.
- 제1항 내지 제13항중 어느 한 항에 있어서, Q는 La를 제외한 란타노이드 계열 원소로 이루어진 군에서, 용해도 한계 내에서 존재하며, 선택되는 적어도 하나인 세라믹 조성물.
- 제1항 내지 제15항 중 어느 어느 한 항에 있어서, 상기한 세라믹 조성물은 n형 및 p형 성분을 필수적으로 포함하는 세라믹 조성물.
- 제1항 내지 제17항 중 어느 한 항에 있어서, 상기한 화합물은 하기 화학식으로 나타내어지는 더미스터용 세라믹 조성물. {(Y1-WREW)1-XQX}{Cr1-Y-ZFeYTiZ}03여기에서 Q는 2A 아족 원소로 이루어진 군에서 선택되는 적어도 하나이고, RE는 3A 아족 원소로 이루어진 군에서 선택되는 적어도 하나이며, 여기서 W, X, Y, Z는 1.0≥W≥0 0.351≥X〉0 0.4≥Y/(1-Y-Z)≥0.05 0.35≥Z≥0.025이다.
- 제18항에 있어서 Q는 Sr이고, 상기한 RE는 Sm인 세라믹 조성물.
- 제18항에 있어서, 상기한 RE는 La를 제외한 란타노이드 계열 원소 중 적어도 하나인 조성물.
- 제1항 내지 제20항 중 어느 한 항의 세라믹 조성물로 특징되는 더미스터 조자.
- 제21항에 정의된 더미스터 소자를 포함하는 온도 측정 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JP93-321428 | 1993-11-15 | ||
JP32142893 | 1993-11-25 | ||
JP93-350190 | 1993-12-29 | ||
JP35019093A JP3254595B2 (ja) | 1993-11-25 | 1993-12-29 | サーミスタ用磁器組成物 |
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KR950014028A true KR950014028A (ko) | 1995-06-15 |
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US (1) | US5610111A (ko) |
EP (1) | EP0655752B1 (ko) |
JP (1) | JP3254595B2 (ko) |
KR (1) | KR100344034B1 (ko) |
DE (1) | DE69432116T2 (ko) |
SG (1) | SG55094A1 (ko) |
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US5879750A (en) * | 1996-03-29 | 1999-03-09 | Denso Corporation | Method for manufacturing thermistor materials and thermistors |
JP3555767B2 (ja) * | 1996-09-18 | 2004-08-18 | 株式会社 豊田中央研究所 | ワイドレンジサーミスタ材料およびその製造方法 |
US6740261B1 (en) | 1997-03-19 | 2004-05-25 | Denso Corporation | Wide-range type thermistor element and method of producing the same |
DE69841837D1 (de) | 1997-03-19 | 2010-09-30 | Denso Corp | Thermistorelement und Temperatursensor |
US6261480B1 (en) | 1997-03-19 | 2001-07-17 | Denso Corporation | Wide-range type thermistor element and method of producing the same |
US6306315B1 (en) | 1998-02-27 | 2001-10-23 | Denso Corporation | Thermistor device thermistor device manufacturing method and temperature sensor |
DE19832843A1 (de) * | 1998-07-21 | 2000-02-10 | Heraeus Electro Nite Int | Thermistor |
US6136231A (en) * | 1998-11-20 | 2000-10-24 | Keystone Thermometrics, Inc. | Yttrium chromite chromia thermistors |
EP1137016B1 (en) * | 1999-08-30 | 2013-10-02 | Denso Corporation | Thermistor device |
JP2002124403A (ja) * | 2000-08-10 | 2002-04-26 | Nippon Soken Inc | 耐還元性サーミスタ素子とその製造方法および温度センサ |
US7138901B2 (en) * | 2004-03-30 | 2006-11-21 | General Electric Company | Temperature measuring device and system and method incorporating the same |
DE102012013036B4 (de) * | 2012-06-29 | 2015-04-02 | Isabellenhütte Heusler Gmbh & Co. Kg | Widerstand, insbesondere niederohmiger Strommesswiderstand, sowie Beschichtungsverfahren hierzu |
CN102924064B (zh) * | 2012-11-23 | 2014-04-02 | 江苏聚盛电子科技有限公司 | 一种宽温区ntc热敏陶瓷材料及其制备方法 |
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DE1646988B2 (de) * | 1965-03-19 | 1973-06-14 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum herstellen polykristalliner scheiben-, stabrohr- oder folienfoermiger keramischer kaltleiter- bzw. dielektrikums- bzw. heissleiterkoerper |
JPS5441716B2 (ko) * | 1972-07-19 | 1979-12-10 | ||
JPS5250393B2 (ko) * | 1972-10-27 | 1977-12-23 | ||
JPS5623281B2 (ko) * | 1974-02-28 | 1981-05-30 | ||
JPS5123691A (ja) * | 1974-08-20 | 1976-02-25 | Matsushita Electric Ind Co Ltd | Koondoyosaamisuta |
US4101454A (en) * | 1975-01-10 | 1978-07-18 | Texas Instruments Incorporated | Ceramic semiconductors |
JPS5339600B2 (ko) * | 1975-02-19 | 1978-10-21 | ||
JPS51108298A (ja) * | 1975-03-19 | 1976-09-25 | Matsushita Electric Ind Co Ltd | Koondoyosaamisutajikizairyo |
JPS61161701A (ja) * | 1985-01-10 | 1986-07-22 | ティーディーケイ株式会社 | サ−ミスタ |
US5246628A (en) * | 1990-08-16 | 1993-09-21 | Korea Institute Of Science & Technology | Metal oxide group thermistor material |
JPH04144201A (ja) * | 1990-10-05 | 1992-05-18 | Shinagawa Refract Co Ltd | 正特性サーミスタおよびその製造方法 |
US5314651A (en) * | 1992-05-29 | 1994-05-24 | Texas Instruments Incorporated | Fine-grain pyroelectric detector material and method |
US5459115A (en) * | 1992-09-22 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Composition of dielectric ceramics |
-
1993
- 1993-12-29 JP JP35019093A patent/JP3254595B2/ja not_active Expired - Lifetime
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1994
- 1994-11-21 US US08/345,684 patent/US5610111A/en not_active Expired - Lifetime
- 1994-11-25 KR KR1019940031258A patent/KR100344034B1/ko not_active IP Right Cessation
- 1994-11-25 EP EP94118582A patent/EP0655752B1/en not_active Expired - Lifetime
- 1994-11-25 DE DE69432116T patent/DE69432116T2/de not_active Expired - Lifetime
- 1994-11-25 SG SG1996005828A patent/SG55094A1/en unknown
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DE69432116T2 (de) | 2003-09-11 |
DE69432116D1 (de) | 2003-03-20 |
EP0655752A2 (en) | 1995-05-31 |
EP0655752A3 (en) | 1996-05-01 |
JP3254595B2 (ja) | 2002-02-12 |
SG55094A1 (en) | 1998-12-21 |
US5610111A (en) | 1997-03-11 |
JPH07201526A (ja) | 1995-08-04 |
KR100344034B1 (ko) | 2002-11-29 |
EP0655752B1 (en) | 2003-02-12 |
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