KR950012853A - Semiconductor laser diode and manufacturing method thereof - Google Patents

Semiconductor laser diode and manufacturing method thereof Download PDF

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Publication number
KR950012853A
KR950012853A KR1019930020947A KR930020947A KR950012853A KR 950012853 A KR950012853 A KR 950012853A KR 1019930020947 A KR1019930020947 A KR 1019930020947A KR 930020947 A KR930020947 A KR 930020947A KR 950012853 A KR950012853 A KR 950012853A
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South Korea
Prior art keywords
layer
active layer
laser diode
semiconductor laser
quantum barrier
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KR1019930020947A
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Korean (ko)
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KR100261248B1 (en
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김택
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

다중 양자장벽의 일부를 불순물로 무질서화함으로써, 굴절률 변화를 준 굴절률 도파형 반도체 레이저 다이오드 및 그 제조 방법이 개시되어 있다. 레이저가 발진하는 활성층과, 상기 활성층 상,하부에 마련되는 서로 다른 도전형의 클래드층, 및 상기 활성층과 상부 클래드층 사이에 형성된 다중 양자장벽층을 구비한다. 상기 다중 양자장벽층은 그 중앙부에 전류가 흐를 수 있는 채널영역을 제외하고 불순물에 의한 무질서화 영역이 형성되어, 상기 활성층의 횡방향으로의 굴절률이 변화하도록 형성된다. 열특성이 우수하며, 펄스 모우드에 유리하며, 그 제조공정도 간단하다.Disclosed is a refractive index waveguide semiconductor laser diode having a refractive index change by disordering a part of multiple quantum barriers with impurities, and a method of manufacturing the same. An active layer which oscillates, a cladding layer of different conductivity types provided on and under the active layer, and a multiple quantum barrier layer formed between the active layer and the upper cladding layer. The multi-quantum barrier layer is formed such that an disordered region due to impurities is formed except for a channel region through which current can flow, and the refractive index of the active layer in the transverse direction changes. It has excellent thermal characteristics, is advantageous for pulse mode, and its manufacturing process is simple.

Description

반도체 레이저 다이오드 및 그 제조방법Semiconductor laser diode and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 IDLD(Impurity Induced Layer Disordering) 기술에 의하여 제조된 반도체 레이저 다이오드의 단면도.1 is a cross-sectional view of a semiconductor laser diode manufactured by a conventional IDpurity Induced Layer Disordering (IDLD) technique.

제2도는 본 발명에 의하여 IDLD(Impurity Induced Layer Disordering) 기술을 사용하여 제조된 반도체 레이저 다이오드의 일례를 나타내는 단면도.2 is a cross-sectional view showing an example of a semiconductor laser diode manufactured using the Impurity Induced Layer Disordering (IDLD) technique according to the present invention.

제3도는 본 발명에 의해 제조된 반도체 레이저 다이오드의 에너지 다이아그램.3 is an energy diagram of a semiconductor laser diode produced by the present invention.

Claims (7)

레이저가 발진하는 활성층과, 상기 활성층 상,하부에 마련되는 서로 다른 도전형의 클래드층, 및 상기 활성층과 상부 클래드층 사이에 형성된 다중 양자장벽증을 구비하여 이루어지는 반도체 레이저 다이오드에 있어서, 상기 다중 양자장벽층은 그 중앙부에 전류가 흐를 수 있는 채널영역을 제외한 부위에 형성된 무질서화 영역을 포함하여, 상기 활성층의 횡방향으로의 굴절률이 변화하도록 형성되어 있는 것을 특징으로 하는 반도체 레이저 다이오드.A semiconductor laser diode comprising an active layer in which a laser oscillates, a cladding layer of different conductivity types provided on and under the active layer, and multiple quantum barriers formed between the active layer and the upper cladding layer. The barrier layer includes a disordered region formed at a portion of the center except for a channel region through which current can flow, so that the refractive index of the active layer in the transverse direction is changed. 제1항에 있어서, 상기 활성층/클래드층은 InCaP/InGaAlP 된 것임을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode of claim 1, wherein the active layer / clad layer is InCaP / InGaAlP. 제1항에 있어서, 상기 활성층은 다중 양자우물 구조인 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode of claim 1, wherein the active layer has a multi-quantum well structure. 제1항에 있어서, 상기 다중 양자장벽층의 상부 부분에 상기 무질서화영역이 형성되어 있는 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode of claim 1, wherein the disordered region is formed in an upper portion of the multiple quantum barrier layer. 제4항에 있어서, 상기 무질서화 영역과 그 하부의 무질서화 되지 않은 양자장벽층은 서로 다른 도전형이 되도록 불순물이 주입된 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode according to claim 4, wherein the disordered region and the unordered disordered quantum barrier layer are implanted with impurities so as to have different conductivity types. 제1도전형의 반도체 기판 위로 제1도전형 클래드층, 활성층, 및 다중 양자장벽층을 차례로 형성하는 단계; 상기 다중 양자장벽층의 중앙부에 전류가 흐를 수 있는 채널영역을 제외한 부위에 불순물을 사용하여 무질서화 영역을 형성하는 단계; 및 상기 다중 양자장벽층 위로 제2도전형 클래드층, 제2도전형 캡층을 차례로 형성하는 단계를 구비하여 이루어진 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.Sequentially forming a first conductive cladding layer, an active layer, and multiple quantum barrier layers over the first conductive semiconductor substrate; Forming an disordered region by using an impurity in a region other than a channel region through which current may flow in the central portion of the multi-quantum barrier layer; And sequentially forming a second conductive cladding layer and a second conductive capping layer over the multi quantum barrier layer. 제6항에 있어서, 상기 다중 양자장벽층에 무질서화 영역을 형성하는 것은 사진식각공정을 거쳐 불순물을 확산(diffusion) 또는 이온주입(implantation)에 의해 형성하는 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.The method of claim 6, wherein forming the disordered region in the multiple quantum barrier layer is performed by diffusing or implanting impurities through a photolithography process. . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930020947A 1993-10-09 1993-10-09 Laser diode and its manufacturing method KR100261248B1 (en)

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KR950012853A true KR950012853A (en) 1995-05-17
KR100261248B1 KR100261248B1 (en) 2000-07-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100590562B1 (en) * 2004-10-27 2006-06-19 삼성전자주식회사 Semiconductor laser diode with multi quantum barrier cladding structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100590562B1 (en) * 2004-10-27 2006-06-19 삼성전자주식회사 Semiconductor laser diode with multi quantum barrier cladding structure

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