KR950012922A

KR950012922A - Laser Diode and Manufacturing Method

Info

Publication number: KR950012922A
Application number: KR1019930022326A
Authority: KR
Inventors: 김종렬
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1993-10-26
Filing date: 1993-10-26
Publication date: 1995-05-17

Abstract

본 발명은 레이저 다이오드와 그 제조방법에 관한 것이다.The present invention relates to a laser diode and a method of manufacturing the same.

본 발명 레이저 다이오드와 그 제조방법은, 액상결정 성장법의 되녹임 식각 및 재성장 기술을 적용하여 한 단계공정으로 이중의 전류주입채널을 용이하게 형성하고, 곧바로 단절없이 깨끗한 표면위에 재성장을 행함으로써, 제작이 간단하며, 2차 성장에 의한 불순물의 확산을 막을 수 있어 소자의 계면 특성, 고출력 특성 및 신뢰성등을 향상시킬 수 있는 이점을 제공한다.The laser diode of the present invention and a method of manufacturing the same, by applying the re-melt etching and regrowth technology of the liquid crystal growth method to easily form a double current injection channel in one step, and immediately re-grow on a clean surface without disconnection, It is simple to manufacture and can prevent the diffusion of impurities by secondary growth, thereby providing the advantage of improving the interface characteristics, high output characteristics and reliability of the device.

Description

Laser Diode and Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 내지 제3도는 본 발명 제조방법의 공정을 개략적으로 도시하는 공정 단면도,2 to 3 are process cross-sectional views schematically showing the process of the manufacturing method of the present invention,

제4도는 본 발명에 따른 레이저 다이오드의 개략적인 단면도이다.4 is a schematic cross-sectional view of a laser diode according to the present invention.

Claims

A substrate on which an electrode is provided on its bottom surface, a first cladding layer, an active layer, and a second cladding layer formed on top of the substrate to sequentially oscillate a laser beam, and the substrate and the first cladding A laser diode having a current limiting layer interposed between layers to inject a limited current, wherein two U-type current injection channels are formed on the substrate at a predetermined distance apart from each other, and are formed between the current injection channels. A current limiting layer having a position higher than that of the current limiting layer formed between the current injection channels is formed on each outer side of the injection channel, and the active layer enters the center portion corresponding to the U-type current injection channel and the current limiting layer, and both sides thereof. The laser diode, characterized in that formed in a raised shape.

(1) a substrate forming step of forming a channel having a flat bottom surface and a narrower inlet than the bottom surface thereof, (2) a current limiting layer growth step of growing a current limiting layer on the substrate on which the channel is formed, and (3) the substrate A channel forming step of forming a dual current injection channel spaced apart from a predetermined distance by etching the channel inlet region of the channel inlet; (4) a first cladding layer, an active layer, and a first cladding layer corresponding to the inner region of the current injection channel The method of manufacturing a laser diode comprising a multi-layer growth step of growing two clad layers.

The method of manufacturing a laser diode according to claim 2, wherein the current limiting layer growing step, the channel forming step and the multi-layer growing step are a single step of growth / demelting etching / regrowth by a liquid crystal growth method.

※ Note: The disclosure is based on the initial application.