KR950012858A - Semiconductor laser device and manufacturing method thereof - Google Patents

Abstract

A novel refractive index waveguide semiconductor laser device manufactured using a disordered phenomenon using a laser beam is disclosed.

An n-InGaAlP cladding layer, a plurality of quantum well layers and a barrier layer are alternately formed on an n-GaAs substrate, and an InGaP active layer including disordered regions is formed in the center and the left and right of the laser oscillation. It is. The p-InGaAlP cladding layer is formed on the active layer, and an n-InGaAlP current blocking layer having an opening through which current flows in the center thereof is formed, and a p-GaAs cap layer is formed on the current blocking layer. A refractive index waveguide structure having excellent mode characteristics can be obtained.

Description

Semiconductor laser device and manufacturing method thereof

Since this is an open matter, no full text was included.

1 is a cross-sectional view showing an example of a semiconductor laser diode having a gain waveguide structure according to the prior art;

2 is a cross-sectional view showing an example of a semiconductor laser diode having a refractive index waveguide structure according to the present invention;

3 is an energy diagram of a multi-quantum well (MQW) structure in the present invention of FIG.

Claims (6)

A GaAs substrate of a first conductivity type; A first conductive InGaAlP clad layer formed adjacent to the substrate; An InGaP active layer formed on the first conductive cladding layer, and having a multi-quantum well structure in which a plurality of quantum well layers and barrier layers are alternately formed, and disordered regions are formed at left and right sides of the laser oscillation center. ; A second conductive InGaAlP clad layer formed on the active layer; A first conductive type InGaAlP current blocking layer formed on the second conductive type cladding layer, the first conductive type InGaAlP current blocking layer having an opening through which a current flows; And a GaAs cap layer of a second conductivity type formed on the opening and the current blocking layer. The semiconductor laser device according to claim 1, wherein the first conductive type is implanted with an n-type impurity. The semiconductor laser device according to claim 1, wherein a second conductive InGaP passivation layer is formed between the current blocking layer of the first conductive type including the opening and the cap layer. An InGaP active layer, a second conductive InGaAlP clad layer, and a first conductive InGaAlP clad layer, a multi-quantum well structure having a plurality of quantum well layers and barrier layers alternately formed on a GaAs substrate of a first conductivity type, and a first conductive InGaAlP clad layer; Sequentially forming a conductive InGaAlP current blocking layer by a first order epitaxy process; Selectively etching the first conductive InGaAlP current blocking layer to form an opening through which a current flows in a center of the first conductive InGaAlP current blocking layer; Selectively scanning a laser beam to form disordered regions on the left and right sides of the center where the laser of the active layer oscillates; And forming a second conductive GaAs cap layer on the current blocking layer including the opening by a second epitaxy process. The method of manufacturing a semiconductor laser device according to claim 4, further comprising forming a second conductive type InGaP conductive transfer layer on the entire surface before forming the cap layer. The method of manufacturing a semiconductor laser device according to claim 4, wherein the active layer forms the disordered region by irradiating a laser beam having a wavelength of 630 nm. ※ Note: The disclosure is based on the initial application.