KR950010218A

KR950010218A - Semiconductor laser diode

Info

Publication number: KR950010218A
Application number: KR1019930019470A
Authority: KR
Inventors: 김택
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1993-09-23
Filing date: 1993-09-23
Publication date: 1995-04-26

Abstract

본 발명에 따른 반도체 레이저 다이오드는 소정 p형 GaAs기판상에 n형 GaAs 전류차단층을 성장시킨 후, n형 GaAs전류차단층 및 p형 GaAs 기판을 식각하게 된다. 여기서, 이를 식각하는 공정은 n형 GaAs전류차단층의 상부에 GaAs 산화막을 형성하고, 그위에 소정 개구부를 갖는 감광재를 도포한 후, GaAs 산화막 및 상기 n형 GaAs전류차단층에 대한 식각 속도가 다른 식각 용액을 사용하여 식각을 수행한다. 이와 같이 하면, 상기 감광재가 주 식각 마스크로 작용하고 상기 GaAs산화막이 다이나믹 식각 마스크로 작용하게 되도록 하면서, 식각을 수행하게 된다. 그리하여, 상기 n형 GaAs전류차단층으로부터 상기 p형 GaAs기판의 상부에 이르며 꺽임이 있는 V-형태의 트랜치를 형성하게 된다. 이와같이 트랜치가 형성되면, 이어서 p형 AlGaAs클래드층, AlGaAs활성층, n형 AlGaAs클래드층 및 n형 GaAs캡층을 성장시킨다. 그런다음 상부 및 하부에 제1도전층 및 제2도전층을 형성한다.In the semiconductor laser diode according to the present invention, an n-type GaAs current blocking layer is grown on a predetermined p-type GaAs substrate, and then the n-type GaAs current blocking layer and the p-type GaAs substrate are etched. The etching process may include forming a GaAs oxide film on the n-type GaAs current blocking layer, applying a photosensitive material having a predetermined opening thereon, and then etching rate of the GaAs oxide film and the n-type GaAs current blocking layer is increased. The etching is performed using another etching solution. In this way, etching is performed while the photoresist acts as a main etching mask and the GaAs oxide film serves as a dynamic etching mask. Thus, a V-type trench with a bending extending from the n-type GaAs current blocking layer to the upper portion of the p-type GaAs substrate is formed. When the trench is formed in this manner, a p-type AlGaAs clad layer, an AlGaAs active layer, an n-type AlGaAs clad layer, and an n-type GaAs cap layer are grown. Then, the first conductive layer and the second conductive layer are formed on the upper and lower portions.

Description

Semiconductor laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 종래 기술에 따른 BSIS구조를 갖는 반도체 레이저 다이오드의 단면도이다,2 is a cross-sectional view of a semiconductor laser diode having a BSIS structure according to the prior art.

제3도는 본 발명을 사용한 습식 식각 방법에 의하여 기판에 V-홈을 식각한 단면도이다,3 is a cross-sectional view of etching the V-groove on the substrate by a wet etching method using the present invention,

제4도는 본 발명에 따른 반도체 레이저 다이오드의 단면도이다.4 is a cross-sectional view of a semiconductor laser diode according to the present invention.

Claims

A method of manufacturing a semiconductor laser diode, comprising: growing a current blocking layer on a predetermined substrate, and heat treating an upper portion of the resultant obtained in the step to form a natural oxide film on the current blocking layer; Forming a photoresist layer having a predetermined opening on the natural oxide film; And etching the resultant coated with the photoresist using an etching solution in which the rate of etching the current blocking layer is faster than the rate of etching the natural oxide film.

The method of claim 1, further comprising: sequentially growing the first cladding layer, the active layer, the second cladding layer, and the cap layer after the etching process; And forming conductive layers on an upper portion of the cap layer and a lower portion of the substrate, respectively.

A method of fabricating a semiconductor laser diode, comprising: growing an n-type GaAs current blocking layer on a predetermined p-type GaAs substrate; Forming a GaAS oxide film on the n-type GaAs current cutoff; A photolithography process of forming a predetermined opening after applying a photosensitive material on top of the GaAS oxide film; By using an etching solution having a different etching rate with respect to the GaAS oxide film and the n-type GaAs current blocking layer, the photosensitive material acts as a main etching mask and the oxide film of GaAs serves as a dynamic etching mask, thereby preventing the n-type GaAs current blocking. And etching the upper portion of the p-type GaAs substrate from the layer to form a bent V-shaped trench.

The method of claim 3, wherein the etching solution is a solution having an activation energy of 35 × 10 ³ J / mol.

The method of claim 3, wherein the etching solution is a NH ₄ OH: H ₂ O ₂ : H ₂ O solution having a composition ratio of 1: 7: 150.

The method of claim 3, further comprising sequentially growing a p-type AlGaAs cladding layer, an AlGaAs active layer, an n-type AlGaAs cladding layer, and an n-type GaAs capping layer after the etching process; And forming a first conductive layer and a second conductive layer on an upper portion of the n-type GaAs cap layer and a lower portion of the p-type GaAs substrate, respectively.

A semiconductor laser diode, comprising: a p-type GaAs substrate; An n-type GaAs current blocking layer grown on the substrate, wherein the n-type GaAs current blocking layer has a bent V-shape and a trench extending to an upper portion of the substrate; And a p-type AlGaAs cladding layer, an AlGaAs active layer, and an n-type AlGaAs cladding layer sequentially stacked on the n-type GaAs current blocking layer while filling the trench.

8. The semiconductor device of claim 7, further comprising: an n-type GaAs cap layer stacked on the n-type AlGaAs cladding layer; And a first conductive layer and a second conductive layer respectively formed on an upper portion of the n-type GaAs cap layer and a lower portion of the p-type GaAs substrate.

※ Note: The disclosure is based on the initial application.