KR950010228A

KR950010228A - Laser Diode and Manufacturing Method

Info

Publication number: KR950010228A
Application number: KR1019930019952A
Authority: KR
Inventors: 김종렬
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1993-09-27
Filing date: 1993-09-27
Publication date: 1995-04-26

Abstract

본 발명은 레이저 다이오드와 그 제조방법을 개시한다.The present invention discloses a laser diode and a method of manufacturing the same.

본 발명 레이저 다이오드는, 역메사 구조의 내부 스트라이프 채널 형상이며, 그 방법에 있어서는 통상적인 MBE방식이나 MOCVD방식에 의해 버퍼층, 크래드층, 전류차단 등을 성장시키고, 소정의 에칭에 의해 내부 스트라이프 채널을 형성한 후, 연속적으로 재성장을 행하여 크래드층, 활성층, 버퍼층등을 적층시켜 전류제한층을 활성층의 하부에 둔다. 이와같이, 내부 스트라이프 형성과, 재성장이 단절없이 연속적으로 이루어짐으로 매우 깨끗한 표면위에 양질의 결정층을 성장할 수 있고, 활성층이 스트라이프 상부에 위치함으로 소정의 에칭시 생기는 불순물의 확산을 고려하지 않아도 된다. 또한, 발광점의 좌우로 경사면이 존재함으로 횡 방향의 모드 제어가 유리하다.The laser diode of the present invention has an internal stripe channel shape having an inverted mesa structure. In this method, a buffer layer, a clad layer, a current cutoff, etc. are grown by a conventional MBE method or a MOCVD method, and an internal stripe channel is formed by a predetermined etching. After the formation of the A, the regrowth is continuously performed to stack the cladding layer, the active layer, the buffer layer, and the like, and the current limiting layer is placed under the active layer. As such, the internal stripe formation and the regrowth are continuously performed without interruption, so that a good crystal layer can be grown on a very clean surface, and the active layer is located above the stripe, so that diffusion of impurities generated during a predetermined etching is not considered. In addition, since the inclined surface exists to the left and right of the light emitting point, the mode control in the lateral direction is advantageous.

Description

Laser Diode and Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 레이저 다이오드의 단면도이고,1 is a cross-sectional view of a conventional laser diode,

제2도는 본 발명에 따른 레이저 다이오드의 제조단계별 단면도이며, 그리고2 is a cross-sectional view of each step of manufacturing a laser diode according to the present invention, and

제3도는 본 발명에 따른 레이저 다이오드의 개략적 단면도이다.3 is a schematic cross-sectional view of a laser diode according to the invention.

Claims

A lower buffer layer formed on an upper surface of the substrate to protect the substrate, first and second lower clad layers formed on the lower buffer layer, and an upper surface of the second lower clad layer; An active layer in which laser light is generated, a current blocking layer interposed in the first and second lower clad layers to provide a current passing region for restricting supply of current to the active layer, and sequentially formed on top of the active layer In a laser diode having an upper cladding layer, an upper buffer layer, and the like, the second lower cladding layer and the active layer form an inner mesmerizing channel having an inverted mesa structure by a current blocking layer that is separated from left and right to provide the current passing region. The current limiting layer is formed below the active layer, and has a self-aligned structure (SAS) in which the first and second lower clad layers are in contact with the current passing region. A laser diode, characterized in that the air to the refractive index waveguide type.

A lower buffer layer formed on an upper surface of the substrate to protect the substrate, first and second lower clad layers formed on the lower buffer layer, and an upper surface of the second lower clad layer; A current blocking layer which is interposed between the active layer in which laser light is generated, the current blocking layer which is interposed in the first and second lower clad layers to provide a current passing region for supplying limited current to the active layer, and is sequentially formed on the active layer. A method of manufacturing a laser diode having an upper cladding layer and an upper buffer layer, comprising: a first growth step of sequentially growing a lower buffer layer, a first lower clad layer, and a current blocking layer on the substrate; Etching to form an inner stripe channel having an inverted mesa structure, and an etching process of leaving the semiconductor material of the current blocking layer a predetermined thickness below the channel; A second lower cladding layer and an active layer are grown to correspond to an internal stripe channel structure of a reverse mesa structure formed by the removal process of removing the semiconductor material of the current blocking layer remaining in the process through a predetermined etching process. And a second growth step of sequentially crystal-growing the upper clad layer, the upper buffer layer, and the like.

The method of claim 2, wherein the residual thickness of the semiconductor material of the current blocking layer remaining in the lower portion of the channel during the etching process is about 0.1 μm.

The method of manufacturing a laser diode according to claim 2, wherein said removing step is performed by thermal etching using an MBE method.

The method of manufacturing a laser diode according to claim 2, wherein the removing step is performed by vapor phase etching using HCL gas using a MOCDV method.

※ Note: The disclosure is based on the initial application.