KR950007479B1 - Vapor system - Google Patents
Vapor system Download PDFInfo
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- KR950007479B1 KR950007479B1 KR1019910012157A KR910012157A KR950007479B1 KR 950007479 B1 KR950007479 B1 KR 950007479B1 KR 1019910012157 A KR1019910012157 A KR 1019910012157A KR 910012157 A KR910012157 A KR 910012157A KR 950007479 B1 KR950007479 B1 KR 950007479B1
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- South Korea
- Prior art keywords
- gas
- gas pipe
- pipe
- control valve
- container
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- 239000007789 gas Substances 0.000 claims abstract description 142
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 239000001307 helium Substances 0.000 claims abstract description 11
- 229910052734 helium Inorganic materials 0.000 claims abstract description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000009834 vaporization Methods 0.000 claims description 10
- 230000008016 vaporization Effects 0.000 claims description 10
- 239000006200 vaporizer Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 238000002309 gasification Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000001704 evaporation Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Abstract
Description
제1도는 본 발명에 따른 기화시스템의 계통도.1 is a schematic diagram of a vaporization system according to the present invention.
제2도는 제1도의 제1 및 제2기화기에 대한 세부 단면구성도.2 is a detailed cross-sectional view of the first and second vaporizers of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1: 제1가스용기 15 : 제2가스용기1: first gas container 15: second gas container
9 : 유량흐름 조절기 21 : 챔버9 flow rate regulator 21 chamber
3, 6, 11 및 17 : 제1, 제3, 제2 및 제4가스조절밸브3, 6, 11 and 17: first, third, second and fourth gas control valve
13 및 19 : 제2 및 제1기화기 31 : 실린더13 and 19: second and first carburetor 31: cylinder
36 : 주입기 37 : 그물망36: injector 37: netting
38 : 금속필터38: metal filter
본 발명은 액체상태의 반응원료를 사용하는 반도체 제조용 장비에 소요되는 기화시스템에 관한 것으로, 특히 액체상태의 입자가 챔버(chamber)로 유압되기 전에 이를 효과적으로 가열시켜 액체 상태의 입자를 완전한 기체상태의 입자로 변환시켜주는 기화시스템에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a vaporization system for semiconductor manufacturing equipment using liquid reaction raw materials. In particular, the present invention relates to an evaporation system, in particular, which effectively heats liquid particles before they are hydraulically pumped into a chamber. A vaporization system that converts particles into particles.
일반적으로 챔버에 반도체 기판등을 집어넣은 다음 화합물을 유입시켜 반도체 기판을 식각 또는 반도체기판에 불순물을 증착시킨다. 이때 챔버에 유입되는 화합물로는 T.C.A.(Cl3CC3) POCL3, 또는 Ta(C2H5O)5등이 사용되는데 이들 화합물의 특성은 ＜표 1＞과 같다. 여기서, Ta(C2H5O)5화합물의 성질에 대해 살펴보면, 융점이 21℃이고, 비등점은 145℃이다. 또한 이화합물은 기화압력이 낮고 비등점이 높은 관계로 거품형태의 가스운송 방식에서는 완전한 기체상태 입자로 되지 않은 상태에서 챔버내로 유입되기 때문에 반도체 기판의 식각 또는 증착정도가 일정치 못하게 되어 반도체 기판이 손상되는 경우가 발생하게 된다.In general, a semiconductor substrate is put into a chamber, and then a compound is introduced to etch the semiconductor substrate or deposit impurities on the semiconductor substrate. In this case, TCA (Cl 3 CC 3 ) POCL 3 , or Ta (C 2 H 5 O) 5 or the like is used as the compound introduced into the chamber, and the properties of these compounds are shown in Table 1. Here, looking at the properties of the Ta (C 2 H 5 O) 5 compound, the melting point is 21 ℃, the boiling point is 145 ℃. In addition, since the compound has a low vaporization pressure and a high boiling point, the bubble-type gas transportation method is introduced into the chamber in a state of not being completely gaseous particles, so that the degree of etching or deposition of the semiconductor substrate is not constant, thereby damaging the semiconductor substrate. Will occur.
[표 1]TABLE 1
따라서, 본발명은 1차적으로 가열되어 공급되는 Ta(C2H5O)5화학물을 2차적으로 가열시켜 완전한 기체상태로 변환하여 챔버에 공급되게 하므로서 상기한 단점이 해소될수 있는 기화시스템을 제공하는데 그 목적이 있다.Accordingly, the present invention provides a vaporization system in which the above-mentioned disadvantages can be solved by first heating the Ta (C 2 H 5 O) 5 chemical supplied by heating to a second state and converting the gas into a complete gas state. The purpose is to provide.
본 발명의 기화시스템은 상기 제1가스용기(1)로부터 관로를 형성하는 제1가스관(2), 제1가스조절밸브(3), 제2 및 제3가스관(4 및 8), 유량흐름 조절기(9), 제10가스관(10), 제2가스조절밸브(11), 제11가스관(12), 제2기화기(13), 제7가스관(14)과, 상기 제3가스관(8)으로부터 관로를 형성하는 제4가스관(5), 제3가스조절밸브(6), 제5가스관(7)과, 저부에 제1히타부(22)가 설치되며 상기 제7가스관(14)으로부터의 아르곤 또는 헬륨가스를 유압받아 자신에 저장된 화합물을 반응시키는 제2가스용기 (15)와, 상기 제2가스용기(15) 및 상기 제5가스관(7)으로부터 관로를 형성하는 제6가스관(16)과, 상기 제6가스관(16)으로부터 관로를 형성하는 제4가스조절밸브(17), 제8가스관(18), 제9가스관(20)과, 상기 제9가스관(20)으로부터 가스가 챔버(21)로 유입되도록 구성되는 기화시스템에서, 상기 제8가스관(18) 및 제9가스관(20)사이에 제1기화기(19)가 설치되는 것을 특징으로 한다.The vaporization system of the present invention includes a first gas pipe (2), a first gas control valve (3), second and third gas pipes (4 and 8), and a flow rate regulator, which form a pipe line from the first gas container (1). (9), from the tenth gas pipe (10), the second gas control valve (11), the eleventh gas pipe (12), the second vaporizer 13, the seventh gas pipe (14) and the third gas pipe (8) The fourth gas pipe (5), the third gas control valve (6), the fifth gas pipe (7), and the first heater part (22) are provided at the bottom and the argon from the seventh gas pipe (14) forming the pipe line. Or a second gas container (15) for hydraulically receiving helium gas and reacting a compound stored therein, a sixth gas pipe (16) for forming a pipe line from the second gas container (15) and the fifth gas pipe (7); In addition, the fourth gas control valve 17, the eighth gas pipe 18, the ninth gas pipe 20, and the gas from the ninth gas pipe 20 to form a pipe from the sixth gas pipe 16, the chamber 21 In the vaporization system is configured to flow into), 8, the gas pipe is characterized in that a first carburettor (19) provided between the 18 and the ninth gas pipe (20).
이하, 첨부된 도면을 참조하여 본발명을 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
제1도는 본 발명에 따른 기화시스템의 계통도로서, 아르곤(Ar) 또는 헬륨(He)가스가 충진된 제1가스용기(1)는 제1가스관(2), 제1가스조절밸브(3) 및 제2가스관 (4)을 통해 관로를 형성한다.1 is a system diagram of a vaporization system according to the present invention, wherein the first gas container 1 filled with argon (Ar) or helium (He) gas includes a first gas pipe (2), a first gas control valve (3), and A pipeline is formed through the second gas pipe (4).
상기 제2가스관(4)은 제4가스관(5), 제3가스조절밸브(6) 및 제5가스관(7)을 통해 관로를 형성하고, 또한 제3가스관(8), 유량흐름 조절기(Mass Flow Controller, 9), 제10가스관(10), 제2가스조절밸브(11), 제11가스관(12), 제2기화기(13) 및 제7가스관(14)을 통해 제2가스용기(15)측으로 관로를 형성한다.The second gas pipe 4 forms a pipeline through the fourth gas pipe 5, the third gas control valve 6, and the fifth gas pipe 7, and also the third gas pipe 8 and the flow rate regulator. The second gas container (15) through the flow controller (9), the tenth gas pipe (10), the second gas control valve (11), the eleventh gas pipe (12), the second vaporizer (13) and the seventh gas pipe (14). Form a pipe to the side.
상기 제2가스용기(15)로부터의 제6가스관(16)은 상기 제5가스관(7)을 통해 관로가 형성되고, 또한, 제4가스조절밸브(17), 제8가스관(18), 제1기화기(19) 및 제9가스관(20)을 통해 챔버(21)측으로 관로를 형성되도록 구성된다.The sixth gas pipe 16 from the second gas container 15 is formed with a pipe through the fifth gas pipe 7, and further includes a fourth gas control valve 17, an eighth gas pipe 18, and a fifth gas pipe 16. It is configured to form a pipeline to the chamber 21 side through the first vaporizer 19 and the ninth gas pipe (20).
한편, 상기 제2가스용기(15)의 저면에는 제1히타부(22)가 설치되고, 상기 제11가스관(12), 제7가스관(14), 제6가스관(16), 제8가스관(18) 및 제9가스관(20)의 외주면 전체에 제6, 제7, 제3, 제4 및 제5 히타부(23,24,25,26 및 27) 각각이 설치되며, 상기 제5가스관(7)은 상기 제6가스관(16)과 연결되는 부위로부터 일정길이의 외주면에 제2히타부(28)가 설치 구성된다.On the other hand, the first heater 22 is provided on the bottom of the second gas container 15, the eleventh gas pipe 12, the seventh gas pipe 14, the sixth gas pipe 16, the eighth gas pipe ( 18) and sixth, seventh, third, fourth, and fifth heater parts 23, 24, 25, 26, and 27 are respectively installed on the entire outer circumferential surface of the ninth gas pipe 20, and the fifth gas pipe ( 7), the second heater 28 is installed on the outer circumferential surface of a predetermined length from a portion connected to the sixth gas pipe 16.
상기와 같이 구성된 본발명의 기화시스템의 작용관계를 설명하면 다음과 같다.Referring to the working relationship of the vaporization system of the present invention configured as described above are as follows.
제1가스용기(1)에 충진된 아르곤 또는 헬륨가스는 제1 및 제2가스조절밸브(3 및 11)의 개폐에 따라 제1가스관(2), 제1가스조절밸브(3), 제2가스관(4), 유량흐름 조절기(9), 제2가스조절밸브(11), 제11가스관(12), 제2기화기(13) 및 제7가스관(14)을 통해 제2가스용기(15)에 유입되는데, 이때 상기 아르곤 또는 헬륨가스는 제6히타부(23)에 의해 예열되고, 제2기화기(13)에서 예를들어 120℃ 정도로 가열된다음 제7히타부(24)에서 다시 예열된 후 상기 제2가스용기(15)에 유입된다.Argon or helium gas filled in the first gas container (1) is the first gas pipe (2), the first gas control valve (3), the second in accordance with the opening and closing of the first and second gas control valve (3 and 11) The second gas container 15 through the gas pipe 4, the flow rate regulator 9, the second gas control valve 11, the eleventh gas pipe 12, the second vaporizer 13 and the seventh gas pipe 14. In this case, the argon or helium gas is preheated by the sixth heater 23, heated in the second vaporizer 13, for example about 120 ℃ and then preheated again in the seventh heater 24 Then it is introduced into the second gas container (15).
상기 제2가스용기(15)내의 Ta(C2H5O)5화합물은 제1히타부(22)에 가열된 상태로 제7가스관(14)을 통해 유입되는 헬륨 또는 아르곤가스와 반응하여 기포상태로 변환된다. 이 기포상태의 Ta(C2H5O)5화합물은 제4가스조절밸브(17)의 개폐에 따라 제6가스관(16), 제4가스조절밸브(17), 제1기화기(19) 및 제9가스관(20)을 통해 챔버(21)내에 유입되는데, 상기 기포상태의 Ta(C2H5O)5화합물은 먼저 제3히타부 (25) 및 제4히타부(26)에서 에열되고 제1기화기(19)에서 완전한 기체상태로 변환된다음 제5히타부(27)에서 다시 예열되어 상기 챔버(21)내에 유입된다.The Ta (C 2 H 5 O) 5 compound in the second gas container 15 is bubbled by reacting with helium or argon gas introduced through the seventh gas pipe 14 while being heated in the first heater 22. Is converted to a state. The bubbling Ta (C 2 H 5 O) 5 compound has the sixth gas pipe 16, the fourth gas control valve 17, the first vaporizer 19 and the opening and closing of the fourth gas control valve 17. It is introduced into the chamber 21 through the ninth gas pipe 20, the Ta (C 2 H 5 O) 5 compound in the bubble state is first annealed in the third hitter 25 and the fourth hitter 26 The first vaporizer 19 is converted into a complete gas state, and then preheated again in the fifth heater 27 to be introduced into the chamber 21.
또한, 상기 제2가스관(4)으로부터의 아르곤 또는 헬륨가스는 제3가스조절밸브 (6)의 개폐에 따라 제5가스관(7)을 통해 제6가스관(16)에 공급되어 제6가스관(16)을 통과하는 기포상태의 Ta(C2H5O)5화합물과 반응하여 기포상태의 Ta(C2H5O)5화합물이 액화되지 않도록 한다. 주로(증착 반응을 일으키기 위해 사용되는 가스관은 제7가스관(14)이며, 반응을 일으키지 않을 경우 사용되는 가스관은 제5가스관(7)으로 제1가스용기(1)의 동일가스가 사용된다.In addition, argon or helium gas from the second gas pipe 4 is supplied to the sixth gas pipe 16 through the fifth gas pipe 7 in accordance with the opening and closing of the third gas control valve 6 to provide a sixth gas pipe 16. React with the bubbled Ta (C 2 H 5 O) 5 compound passing through) to prevent the bubbled Ta (C 2 H 5 O) 5 compound from liquefying. Mainly (the gas pipe used for causing the deposition reaction is the seventh gas pipe 14, and the gas pipe used when the reaction does not occur is the fifth gas pipe 7, and the same gas of the first gas container 1 is used.
제2도는 제1도의 제1 및 제2기화기에 대한 세부단면구성도로서, 저부 및 상부에 가스유입구(29) 및 출구(30)가 형성되며 예를들어 스테인레스 재질의 실린더(31) 외주면 좌, 우측부에는 제1 및 제2 절연체(32 및 33) 각각애 의해 쌓여진 제1열선(34) 및 제2열선(35) 각각이 설치된다.FIG. 2 is a detailed cross-sectional view of the first and second carburetor of FIG. 1, in which gas inlets 29 and outlets 30 are formed at the bottom and the top thereof, for example, left and right outer peripheral surfaces of the cylinder 31 made of stainless steel. The first heating wire 34 and the second heating wire 35 stacked by the first and second insulators 32 and 33, respectively, are provided in the right part.
상기 실린더(31)의 유입구(29)에는 노즐(NOZZLE) 형태의 주입기(36)가 장착되는데, 이는 유입되는 액체성 화합물 입자를 골고루 분사시켜주는 역할을 한다.The inlet 29 of the cylinder 31 is equipped with an injector 36 in the form of a nozzle (NOZZLE), which serves to evenly spray the incoming liquid compound particles.
또한, 상기 실린더(31)의 내주면에는 상기 주입기(36)에 의해 분사되는 화합물 입자를 흡수하는 원통형 그물망(37)이 설치되는데, 이 그물망(37)에 흡수된 화합물 입자는 상기 제1 및 제2열선(34 및 35)에서 가열되는 열에 의해 완전히 기화상태로 변환된다. 또 상기 그물망(37)은 열을 균일하게 유지시키는 역할도 하게 된다.In addition, the inner peripheral surface of the cylinder 31 is provided with a cylindrical mesh 37 for absorbing the compound particles injected by the injector 36, the compound particles absorbed in the mesh 37 is the first and second The heat heated in the hot wires 34 and 35 is completely converted into the vaporized state. In addition, the mesh 37 also serves to keep heat uniform.
한편, 상기 그물망(37)의 내주면에는 소정길이를 갖는 원통형 금속필터 (Filter)(38)가 설치되는데, 이는 상기 그물망(37)으로부터 기화되는 화합물속에서 발생되는 불순물이나 오염물질이 상기 챔버(21)내로 유입되는 것을 방지하는 역할을 하게 된다.On the other hand, a cylindrical metal filter (Filter) 38 having a predetermined length is installed on the inner circumferential surface of the mesh 37, which impurity or contaminants generated in the compound vaporized from the mesh 37 is the chamber 21 ) To prevent the inflow into the inside.
상술한 바와 같이 본 발명에 의하여, 완전히 기화되지 않은 상태로 챔버내에 유입될 수도 있는 화합물을 완전한 기화상태로 변환시켜 챔버내로 유입되게 하므로서 챔버내의 반도체 기판의 식각 또는 불순물 증착공정시 반도체 기판의 손상을 예방할수 있는 탁월한 효과가 있다.As described above, the present invention converts a compound that may be introduced into the chamber into a completely vaporized state without being completely vaporized, thereby introducing it into the chamber, thereby preventing damage to the semiconductor substrate during etching or impurity deposition of the semiconductor substrate in the chamber. It has an excellent effect that can be prevented.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910012157A KR950007479B1 (en) | 1991-07-16 | 1991-07-16 | Vapor system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910012157A KR950007479B1 (en) | 1991-07-16 | 1991-07-16 | Vapor system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930003240A KR930003240A (en) | 1993-02-24 |
| KR950007479B1 true KR950007479B1 (en) | 1995-07-11 |
Family
ID=19317363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910012157A KR950007479B1 (en) | 1991-07-16 | 1991-07-16 | Vapor system |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950007479B1 (en) |
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1991
- 1991-07-16 KR KR1019910012157A patent/KR950007479B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930003240A (en) | 1993-02-24 |
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